DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS(on) max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V 45mΩ @ VGS = -10V 55mΩ @ VGS = -4.5V ID TA = +25°C 9.0A 7.8A -6.5A -5.9A • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching • • performance, making it ideal for high efficiency power management Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram Applications • • DC-DC Converters • • Power Management Functions • Backlighting Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 D1 D2 S2 D2 G2 D2 S1 D1 G1 D1 G1 G2 S2 TOP VIEW Internal Schematic Top View e3 Weight: 0.074 grams (approximate) N-Channel MOSFET S1 P-Channel MOSFET Ordering Information (Note 4 & 5) Part Number DMC4029SSD-13 DMC4029SSDQ-13 Notes: Compliance Standard Automotive Case SO-8 SO-8 Packaging 2,500/Tape & Reel 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Top View 8 5 Logo C4029SD Part no . YY WW Xth week: 01 ~ 53 Year: “13” = 2013 1 DMC4029SSD Document number: DS36350 Rev. 3 - 2 4 1 of 8 www.diodes.com March 2014 © Diodes Incorporated DMC4029SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs pulse, duty cycle = 1%) ID Value_Q2 40 ±20 7.0 5.6 Value_Q1 -40 ±20 -5.1 -4.1 9.0 7.2 2.5 70 -6.5 -5.2 -2.5 -40 ID IS IDM Units V V A A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RθJC TJ, TSTG Value 1.3 0.8 98 59 1.8 1.1 71 43 11.8 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) VSD ⎯ 15 20 0.7 3.0 24 32 1.0 V Static Drain-Source On-Resistance 1.0 ⎯ ⎯ ⎯ VDS = VGS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VGS = 0V, IS = 1.0A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1060 84 58 1.6 8.8 19.1 3.0 2.5 5.3 7.1 15.1 4.8 10.5 4.15 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge DMC4029SSD Document number: DS36350 Rev. 3 - 2 2 of 8 www.diodes.com mΩ V Test Condition pF VDS = 20V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 20V, ID = 8A nS VDD = 25V, RL = 2.5Ω VGS = 10V, RG = 3Ω nS nC IF = 8A, di/dt = 100A/μs IF = 8A, di/dt = 100A/μs March 2014 © Diodes Incorporated DMC4029SSD Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS(ON) VSD ⎯ 33 40 -0.7 -3.0 45 55 -1.0 V Static Drain-Source On-Resistance -1.0 ⎯ ⎯ ⎯ VDS = VGS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1.0A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1154 84 66 12.6 10.6 21.5 2.2 3.3 8.7 19.6 34.9 25.5 9.61 3.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = -20V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -20V, ID = -4.9A nS VDS = -20V, ID = -3.9A VGS = -4.5V, RG = 1Ω nS nC IS = -3.9A, dI/dt = 100A/μs IS = -3.9A, dI/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. N-Channel Q2 20.0 VGS = 10V VGS = 5.0V VGS = 4.5V ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 3.5V VGS = 4.0V 15.0 ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.) 10.0 VGS = 3.0V 5.0 TA = 150°C TA = 125°C TA = 85°C T A = 25°C TA = -55°C 0.0 VGS = 2.5V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic DMC4029SSD Document number: DS36350 Rev. 3 - 2 5 3 of 8 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 March 2014 © Diodes Incorporated DMC4029SSD 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.022 VGS = 4.5V 0.02 0.018 0.016 VGS = 10V 0.014 0.012 0.01 0.008 0 5 10 15 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.18 0.16 ID = 5.0A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 20 0.05 3 4 5 6 7 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 8 2 0.045 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V TA = 150°C 0.035 T A = 125°C 0.03 TA = 85°C 0.025 TA = 25°C 0.02 TA = -55°C 0.015 0.01 VGS = 10V ID = 10A 1.5 VGS = 4.5V ID = 5A 1 0.5 0.005 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 30 3 0.04 0.035 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION NEW PRODUCT 0.024 VGS = 4.5V ID = 5A 0.03 0.025 0.02 VGS = 10V ID = 10A 0.015 0.01 0.005 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature DMC4029SSD Document number: DS36350 Rev. 3 - 2 2.8 2.6 2.4 2.2 2 ID = 1mA ID = 250µA 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 4 of 8 www.diodes.com March 2014 © Diodes Incorporated DMC4029SSD 30 IS, SOURCE CURRENT (A) 20 T A = 150°C 15 TA = 125°C TA = 85°C 10 TA = 25°C TA = -55°C 5 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 94°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 10 Transient Thermal Resistance 10 100 1,000 P-Channel Q1 30 25 -ID, DRAIN CURRENT (A) ADVANCE INFORMATION NEW PRODUCT 25 VGS = -10V VGS = -5.0V 20 VDS = -5.0V VGS = -3.5V VGS = -4.5V VGS = -4.0V VGS = -3.0V 15 10 VGS = -2.5V TA = 125°C TA = 85°C 5 T A = 150 °C VGS = -2.0V 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics DMC4029SSD Document number: DS36350 Rev. 3 - 2 T A = 25°C T A = -55°C 5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 of 8 www.diodes.com March 2014 © Diodes Incorporated DMC4029SSD RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 VGS = -4.5V 0.04 VGS = -10V 0.02 0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 20 VGS = -10V ID = -10A 1.5 VGS = -4.5V ID = -5A 1.0 0.5 0 -50 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -2.5V 2.0 0.1 VGS = -4.5V 0.09 0.08 TA = 150°C 0.07 T A = 125°C 0.06 TA = 85°C 0.05 TA = 25°C 0.04 0.03 T A = -55°C 0.02 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.08 0.07 0.06 VGS = -4.5V ID = -5A 0.05 0.04 VGS = -10V ID = -10A 0.03 0.02 0.01 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 30 2.0 1.8 25 1.6 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT 0.2 ID = -1mA 1.4 1.2 1.0 ID = -250µA 0.8 0.6 0.4 20 15 TA= 25°C 10 5 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature DMC4029SSD Document number: DS36350 Rev. 3 - 2 6 of 8 www.diodes.com 0 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current March 2014 © Diodes Incorporated D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 D = 0.1 D = 0.9 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 9 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. 0.254 ADVANCE INFORMATION NEW PRODUCT DMC4029SSD E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMC4029SSD Document number: DS36350 Rev. 3 - 2 7 of 8 www.diodes.com March 2014 © Diodes Incorporated DMC4029SSD ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMC4029SSD Document number: DS36350 Rev. 3 - 2 8 of 8 www.diodes.com March 2014 © Diodes Incorporated