INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·High efficiency synchronous rectification in SMPS ·Uninterrruptible power supply ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pulsed 620 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 0.65 ℃/W 62 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFB3306，IIRFB3306 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 60 VGS(th) Gate Threshold Voltage VDS=VGS; ID =150μA 2 RDS(on) Drain-Source On-Resistance VGS=10V; ID=75A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VSD Diode forward voltage isc website：www.iscsemi.cn CONDITIONS MIN TYP MAX UNIT V 4 V 4.2 mΩ ±100 nA VDS=60V; VGS= 0V 20 μA IS=75A; VGS = 0V 1.3 V 2 isc & iscsemi is registered trademark