JIEJIE MICROELECTRONICS CO. , Ltd JX020 Series Sensitive gate SCRs Rev.2.0 DESCRIPTION: 2 The JX020 SCR series provide high dv/dt rate with strong resistance to electromagnetic interface. They are especially recommended for use on residual current circuit breaker, straight hair, igniter etc. 1 12 MAIN FEATURES Symbol Value Unit IT(RMS) 2 A IGT ≤200 μA VTM ≤1.5 V 12 3 TO-252 3 TO-126 3 TO-251 132 TO-92 A(2) K(1) G(3) ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Tstg -40-150 ℃ Tj -40-110 ℃ Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V IT(RMS) 2 A ITSM 20 A I2t 2 A2s Critical rate of rise of on-state current dI/dt 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM 0.2 A Peak gate power (tp=20μs, Tj=110℃) PGM 0.5 W PG(AV) 0.1 W Storage junction temperature range Operating junction temperature range TO-92 (TC=63℃) RMS on-state current TO-126 (TC=80℃) TO-251/ TO-252 (TC=90℃) Non repetitive surge peak on-state current (tp=10ms) I2t value for fusing (tp=10ms) Average gate power dissipation(Tj=110℃) TEL：+86-513-83639777 - 1 / 5- http://www.jjwdz.com JX020 Series JieJie Microelectronics CO. , Ltd ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Value Symbol IGT VGT VGD Test Condition Unit VD=12V RL=33Ω VD=VDRM Tj=110℃ MIN. TYP. MAX. - 50 200 μA - 0.6 0.8 V 0.2 - - V IL IG=1.2 IGT - - 6 mA IH IT=0.05A - - 5 mA 10 - - V/μs dV/dt VD=2/3VDRM Tj=110℃ RGK=1KΩ STATIC CHARACTERISTICS Symbol VTM IDRM IRRM Parameter IT=4A tp=380μs VD=VDRM VR=VRRM Value(MAX) Unit Tj=25℃ 1.5 V Tj=25℃ 5 μA Tj=110℃ 100 μA Value Unit THERMAL RESISTANCES Symbol Rth(j-c) Parameter junction to case TO-92 10 TO-126 7.0 TO-251/ TO-252 6.5 ℃/W ORDERING INFORMATION J X 02 05 H U:TO-92 Q:TO-126 H:TO-251 K:TO-252 JieJie Microelectronics Co.,Ltd 05: IGT ≤ 200μA Sensitive gate SCRs TEL：+86-513-83639777 IT(RMS):2A - 2 / 5- http://www.jjwdz.com JX020 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA Dimensions Ref. Millimeters A B2 D V1 H V1 L2 C2 V1 L1 L B3 C B A2 TO-251 Typ. 2.20 2.40 0.086 0.095 A2 0.90 1.20 0.035 0.047 B 0.55 0.65 0.022 0.026 B2 5.10 5.40 0.200 0.213 B3 0.76 0.85 0.030 0.033 Max. C 0.45 0.62 0.018 0.024 C2 0.48 0.62 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.70 0.252 2.30 G G Inches Min. A E Typ. Max. Min. 0.264 0.091 H 16.0 17.0 0.630 0.669 L 8.90 9.40 0.350 0.370 L1 1.80 1.90 0.071 0.075 L2 1.37 1.50 0.054 V1 4° Ref. Millimeters 0.059 4° Dimensions E A C 0.6 M IN A2 TEL：+86-513-83639777 V2 D V1 V1 L1 H L2 B V1 G 2.20 2.40 0.086 0.095 A2 0.03 0.23 0.001 0.009 B 0.55 0.65 0.022 0.026 B2 5.10 5.40 0.200 0.213 C 0.45 0.62 0.018 0.024 C2 0.48 0.62 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.70 0.252 0.264 G 4.40 4.70 0.173 0.185 Max. H 9.35 10.6 0.368 0.417 L1 1.30 1.70 0.051 0.067 L2 1.37 1.50 0.054 4° V1 TO-252 Typ. Min. A C2 Inches Max. Min. B2 Typ. V2 - 3 / 5- 0° 0.059 4° 8° 0° 8° http://www.jjwdz.com JX020 Series JieJie Microelectronics CO. , Ltd PACKAGE MECHANICAL DATA N N C Dimensions Ref. Millimeters Min. Typ. Max. Min. Typ. Max. A 4.45 5.20 0.175 0.205 B 4.32 5.33 0.170 0.210 C 3.18 4.19 0.125 0.165 D 0.407 0.533 0.016 0.021 H F V Inches E 0.60 0.80 0.024 0.031 E F - 1.1 - - 0.043 - G - 1.27 - - 0.050 - H - 2.30 - - 0.091 - J 0.36 0.50 0.014 0.020 K 12.70 15.0 0.500 0.591 N 2.04 2.66 0.080 0.105 P 1.86 2.06 0.073 0.081 V - 4.3 - 0.169 A ax M K P B Φ m 5m 1. J D G TO-92 Dimensions m A ax Ref. H Millimeters Min. M B D Φ 2 3. 0m J E C Max. Min. Typ. Max. A 7.40 7.80 0.291 0.307 B 10.6 11.2 0.417 0.441 C 15.3 16.3 0.602 0.642 D 3.90 4.10 0.154 0.161 E 1.17 1.47 0.046 0.058 F 0.66 0.86 0.026 0.034 2.29 G 0.090 H 2.50 2.90 0.098 0.114 J 1.10 1.50 0.043 0.059 K 0.45 0.60 0.018 0.024 K F G Typ. Inches TO-126 TEL：+86-513-83639777 - 4 / 5- http://www.jjwdz.com JX020 Series JieJie Microelectronics CO. , Ltd FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) P(w) 3 3 α=180° 2 TO-126 2 TO-251/ TO-252 TO-92 1 1 0 0 IT(RMS) (A) 1.0 1.5 0.5 2.0 0 FIG.3: Surge peak on-state current versus number of cycles 20 Tc (℃) 0 2.5 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 20 tp=10ms One cycle 10 Tj=Tjmax 15 10 1 5 Tj=25℃ Number of cycles 0 1 10 100 0.1 0 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) 2.0 VTM (V) 3.0 4.0 5.0 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature 2 2 1.0 2 ITSM (A), I t (A s) IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 3.0 300 ITSM 100 2.5 dI/dt 2.0 IGT 1.5 IH&IL 10 1.0 0.5 I2 t 1 0.01 tp(ms) 0.1 1 10 0.0 -40 Tj (℃) 0 40 80 120 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu JieJie complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu JieJie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. This document is the second version which is made in 18-Nov.-2014. This document supersedes and replaces all information previously supplied. is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd. Copyright ©2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved. TEL：+86-513-83639777 - 5 / 5- http://www.jjwdz.com