Diodes DMN2011UFDE 20v n-channel enhancement mode mosfet Datasheet

DMN2011UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
RDS(ON) max
ID max
TA = +25°C
•
0.6mm Profile – Ideal for Low Profile Applications
•
PCB Footprint of 4mm2
9.5mΩ @ VGS = 4.5V
11.7A
11mΩ @ VGS = 2.5V
•
Low Gate Threshold Voltage
10.8A
•
Low On-Resistance
•
ESD Protected Gate
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
•
Qualified to AEC-Q101 Standards for High Reliability
making it ideal for high efficiency power management applications.
Mechanical Data
V(BR)DSS
20V
Description
•
•
Applications
•
•
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
per MIL-STD-202, Method 208 e4
Weight: 0.0065 grams (Approximate)
•
•
General Purpose Interfacing Switch
Power Management Functions
•
D
U-DFN2020-6
G
Pin1
ESD PROTECTED
Gate Protection
Diode
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2011UFDE-7
DMN2011UFDE-13
Notes:
Marking
N3
N3
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YM
ADVANCE INFORMATION
ADVANCED INFORMATION
Product Summary
N3
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
Mar
3
N3 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
September 2014
© Diodes Incorporated
DMN2011UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
ADVANCED INFORMATION
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Steady
State
TA = +25°C
TA = +70°C
ID
11.7
9.3
A
t<10s
TA = +25°C
TA = +70°C
ID
14.2
11.4
A
Steady
State
TA = +25°C
TA = +70°C
ID
10.8
8.7
A
t<10s
TA = +25°C
TA = +70°C
ID
13.2
10.6
A
Continuous Drain Current (Note 6) VGS = 4.5V
Continuous Drain Current (Note 6) VGS = 2.5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
80
A
Maximum Body Diode Continuous Current
IS
2.5
A
Avalanche Current (Note 7) L = 0.1mH
IAS
18
A
Avalanche Energy (Note 7) L = 0.1mH
EAS
17
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
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PD
RθJA
PD
Value
0.61
0.39
209
142
1.97
1.27
RθJA
64
43
RθJC
9.8
TJ, TSTG
-55 to +150
Units
W
°C/W
W
°C/W
°C
September 2014
© Diodes Incorporated
DMN2011UFDE
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1
µA
VDS = 16V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
IDSS
—
—
100
µA
VDS = 16V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±10V, VDS = 0V
VGS(th)
0.4
V
VDS = VGS, ID = 250μA
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
—
—
1.0
6.5
9.5
VGS = 4.5V, ID = 7A
7.5
11
VGS = 2.5V, ID = 7A
10
20
15
35
mΩ
VGS = 1.8V, ID = 5A
VGS = 1.5V, ID = 3A
VSD
—
0.7
1.2
V
VGS = 0V, IS = 8.5A
ID(ON)
20
—
—
A
VDS ≦5V, VGS = 4.5V
Input Capacitance
Ciss
—
2248
3372
pF
Output Capacitance
Coss
—
295
443
pF
Reverse Transfer Capacitance
Crss
—
265
398
pF
Gate Resistance
Rg
—
1.5
3
Ω
Total Gate Charge (VGS = 4.5V)
Qg
—
24
36
nC
Total Gate Charge (VGS = 10V)
Qg
—
56
84
nC
Gate-Source Charge
Qgs
—
3.5
6
nC
On State Drain Current (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Gate-Drain Charge
Qgd
—
5.1
8
nC
Turn-On Delay Time
tD(on)
—
3.6
6
ns
Turn-On Rise Time
tr
—
2.6
4
ns
tD(off)
—
21.6
33
ns
Turn-Off Delay Time
Turn-Off Fall Time
tf
—
13.5
21
ns
Reverse Recovery Time
Trr
—
12.8
20
ns
Reverse Recovery Charge
Qrr
—
6.9
11
nC
Notes:
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 10V, ID = 8.5A
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8Ω
IF = 8.5A, di/dt = 210A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30.0
30
VGS = 10V
VDS = 5.0V
VGS = 4.5V
25.0
VGS = 4.0V
25
ID, DRAIN CURRENT (A)
VGS = 3.5V
ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
ADVANCED INFORMATION
Characteristic
OFF CHARACTERISTICS (Note 8)
VGS = 3.0V
20.0
20
VGS = 1.5V
VGS = 2.5V
VGS = 2.0V
TA = 150°C
15
15.0
10.0
TA = 125°C
TA = 85°C
10
TA = 25°C
5
5.0
VGS = 1.2V
TA = -55°C
VGS = 1.0V
0.0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
0
2
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0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
September 2014
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
VGS = 1.5V
VGS = 1.8V
VGS = 2.5V
VGS = 4.5V
0.03
0.025
ID = 8.5A
0.02
ID = 3.0A
0.015
0.01
0.005
0
0
8
10
4
6
2
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
12
2
0.016
VGS = 4.5V
0.014
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.012
TA = 150°C
0.01
TA = 125°C
0.008
TA = 85°C
0.006
TA = 25°C
TA = -55°C
0.004
0.002
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
VGS = 2.5 V
ID = 5A
1.2
VGS = 1.8V
ID = 3A
0.8
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
1
VGS(th), GATE THRESHOLD VOLTAGE (V)
0.018
0.016
VGS = 1.8V
ID = 3A
0.014
0.012
0.01
VGS = 2.5V
ID = 5A
0.008
0.006
0.004
0.002
0
1.6
0.4
-50
30
0.02
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ADVANCE INFORMATION
ADVANCED INFORMATION
DMN2011UFDE
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( °C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
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DMN2011UFDE
30
10000
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
IS, SOURCE CURRENT (A)
20
TA = 150°C
TA = 125°C
15
TA = 85°C
TA = 25°C
10
TA = -55°C
5
0
0
Ciss
1000
Coss
Crss
100
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
1000
10
RDS(on)
Limited
9
8
100
-ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
7
6
VDS = 10V
ID = 8.5A
5
4
3
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
P = 10ms
W
TJ(max) = 150°C
PW = 1ms
0.1 TA = 25°C
PW = 100µs
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
2
1
0
0
20
30
40
50
10
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
ADVANCED INFORMATION
25
60
0.01
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 207°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.0001
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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100
1000
September 2014
© Diodes Incorporated
DMN2011UFDE
Package Outline Dimensions
ADVANCE INFORMATION
ADVANCED INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A1
A
A3
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
b(6X)
Suggested Pad Layout
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Dimensions
Y3 Y2
X2
C
X
X1
X2
Y
Y1
Y2
Y3
Y1
X1
X (6x)
DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
C
Y (2x)
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Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
September 2014
© Diodes Incorporated
DMN2011UFDE
ADVANCE INFORMATION
ADVANCED INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMN2011UFDE
Datasheet number: DS36376 Rev. 4 - 2
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September 2014
© Diodes Incorporated
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