® HER1001GD thru HER1008GD Pb HER1001GD thru HER1008GD Pb Free Plating Product 10.0 Ampere Heatsink Dual Doubler Tandem High Efficiency Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability TO-220AB Unit : inch (mm) .054(1.39) .045(1.15) .624(15.87) .177(4.5)MAX Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .038(0.96) .019(0.50) Mechanical Data Case: Heatsink TO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.1 gram approxiamtely .50(12.7)MIN Application .1(2.54) .548(13.93) .139(3.55) MIN .269(6.85) .196(5.00) .163(4.16) .226(5.75) .419(10.66) .387(9.85) .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "G" Negative Common Anode Suffix "GA" Case Doubler Tandem Polarity Suffix "GD" Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HER HER HER HER HER HER HER HER 1001GD 1002GD 1003GD 1004GD 1005GD 1006GD 1007GD 1008GD Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 10 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 125 A Maximum Instantaneous Forward Voltage (Note 1) @5A VF Maximum DC Reverse Current at Rated DC Blocking Voltage IR @ T A=25 ℃ @ T A=125 ℃ 1.0 1.3 1.7 10 uA Trr 50 80 Typical Junction Capacitance (Note 3) Cj 60 40 Operating Temperature Range Storage Temperature Range V uA 400 Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance V nS pF 1.5 ℃/W TJ - 65 to + 150 ℃ TSTG - 65 to + 150 ℃ RθJC Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ® HER1001GD thru HER1008GD RATINGS AND CHARACTERISTIC CURVES (HER1001GD thru HER1008GD) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1000 10 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD A CURRENT (A) 12 8 6 4 2 0 0 50 100 150 o LEAD TEMPERATURE ( C) TA=125℃ 100 TA=75℃ 10 TA=25℃ 1 0.1 PEAK FORWARD SURGE CURRENT (A) 150 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 125 8.3mS Single Half Sine Wave JEDEC Method 100 FIG. 5- TYPICAL FORWARD CHARACTERISRICS 75 100 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL JUNCTION CAPACITANCE 240 200 160 INSTANTANEOUS FORWARD CURRENT (A) 50 25 CAPACITANCE (pF) 0 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT HER1005GD HER1001GD-HER1004GD 10 1 HER1006GD-HER1008GD 0.1 TA=25℃ PULSE SE WIDTH-300us 1% DUTY CYCLE HER1001GD-HER1005GD 120 0.01 80 0.4 HER1006GD-HER1008GD 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) 40 0 1 10 100 1000 REVERSE VOLTAGE (V) Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/