Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH120N65B3 VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 10-30kHz Switching 650V 120A 1.90V 107ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Maximum Ratings 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 340 160 120 760 A A A A G = Gate E = Emitter IA EAS TC = 25°C TC = 25°C 60 1 A J Features SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 240 VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 400V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 1360 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque TJ TJM Tstg TL TSOLD G Weight BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V 6.0 VCE = 0V, VGE = 20V VCE(sat) IC = 100A, VGE = 15V, Note 1 TJ = 150C © 2015 IXYS CORPORATION, All Rights Reserved V Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability International Standard Package High Power Density Low Gate Drive Requirement Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts 25 A 1 mA TJ = 150C IGES V C = Collector Tab = Collector Applications Characteristic Values Min. Typ. Max. Tab E Advantages Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) C 100 1.55 1.77 1.90 nA V V DS100662(4/15) IXYH120N65B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 35 Cies Coes Cres Qg(on) Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff IC = 60A, VCE = 10V, Note 1 Inductive load, TJ = 25°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C IC = 50A, VGE = 15V VCE = 400V, RG = 2 Note 2 S nC 52 nC 110 nC 30 28 1.34 168 107 1.50 ns ns mJ ns ns mJ 30 30 2.60 226 196 2.20 ns ns mJ ns ns mJ 0.21 0.11 °C/W °C/W B E Q pF pF pF 250 IC = 120A, VGE = 15V, VCE = 0.5 • VCES RthJC RthCS Notes: 58 6900 393 146 VCE = 25V, VGE = 0V, f = 1MHz TO-247 (IXYH) Outline D A A2 R S 0P A 0K M D B M D2 D1 D 0P1 R1 1 2 3 4 IXYS OPTION L1 C L A1 c b b2 b4 e J MCAM E1 1 - Gate 2,4 - Collector 3 - Emitter 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH120N65B3 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 240 350 VGE = 15V VGE = 15V 13V 12V 200 11V 11V 250 160 10V I C - Amperes I C - Amperes 12V 300 120 9V 80 200 10V 150 9V 100 40 8V 50 0 7V 0 8V 7V 0 0.5 1 1.5 2 2.5 3 3.5 0 2 4 6 240 2.0 VGE = 15V 13V 12V 11V 12 14 VGE = 15V VCE(sat) - Normalized 1.8 10V 160 I C - Amperes 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ TJ = 150ºC 200 8 VCE - Volts VCE - Volts 120 9V 80 I C = 240A 1.6 1.4 1.2 I C = 120A 1.0 8V 40 0.8 I C = 60A 7V 0.6 0 0 0.5 1 1.5 2 2.5 3 3.5 -50 4 -25 0 VCE - Volts 4.5 140 I C - Amperes VCE - Volts 125 150 175 180 160 4.0 I C = 240A 3.0 120 TJ = 150ºC 25ºC 100 - 40ºC 80 60 120A 2.0 100 Fig. 6. Input Admittance 5.0 2.5 75 200 TJ = 25ºC 5.5 3.5 50 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 25 40 60A 1.5 20 1.0 0 8 9 10 11 12 VGE - Volts © 2015 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE - Volts 8 9 10 IXYH120N65B3 Fig. 7. Transconductance Fig. 8. Gate Charge 120 16 TJ = - 40ºC 100 VCE = 325V 12 I G = 10mA I C = 120A 25ºC 80 150ºC VGE - Volts g f s - Siemens 14 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 160 180 200 220 0 50 I C - Amperes Fig. 9. Capacitance 150 200 250 Fig. 10. Reverse-Bias Safe Operating Area 280 10,000 240 Cies 200 I C - Amperes Capacitance - PicoFarads 100 QG - NanoCoulombs 1,000 Coes 160 120 80 TJ = 150ºC 40 Cres f = 1 MHz 0 1100 100 0 5 10 15 20 25 30 35 40 RG = 2Ω dv / dt < 10V / ns 200 300 400 500 600 700 VCE - Volts VCE - Volts Fig. 12. Maximum Trasient thermal Impedance Fig. 11. Forward-Bias Safe Operating Area aaa 0.2 1000 VCE(sat) Limit 0.1 I D - Amperes 100µs 10 1ms 1 TJ = 175ºC 0.01 10ms 100ms TC = 25ºC Single Pulse 0.1 1 Z (th)JC - ºC / W 25µs 100 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYH120N65B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance Eoff 5.0 10 --- Eoff 4.5 TJ = 150ºC , VGE = 15V 5 VCE = 400V 8 I C = 100A 3 4 I C = 50A 2 5 TJ = 150ºC 3.0 2.5 3 2.0 2 TJ = 25ºC 8 10 12 1 1.0 0 6 4 2 1 4 6 3.5 1.5 2 50 14 55 60 65 70 RG - Ohms Eoff 4.5 Eon ---- 8 tfi 7 90 95 0 100 5 3.0 4 2.5 I C = 50A 3 td(off) - - - 500 VCE = 400V 190 400 I C = 50A 170 300 2 I C = 100A 150 1.5 600 t d(off) - Nanoseconds 3.5 6 t f i - Nanoseconds I C = 100A Eon - MilliJoules Eoff - MilliJoules 85 TJ = 150ºC, VGE = 15V 210 VCE = 400V 2.0 200 1 1.0 25 50 75 100 130 0 150 125 100 2 4 6 8 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 220 tfi 200 td(off) - - - - VCE = 400V tfi 260 190 180 100 160 TJ = 25ºC 80 140 60 55 60 65 70 75 80 85 I C - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 90 95 120 100 t f i - Nanoseconds 120 220 170 200 I C = 50A 150 180 I C = 100A 130 160 110 140 90 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 200 240 VCE = 400V t d(off) - Nanoseconds 220 140 50 14 td(off) - - - - RG = 2Ω , VGE = 15V 240 TJ = 150ºC 160 12 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 210 280 RG = 2Ω , VGE = 15V 180 10 RG - Ohms TJ - Degrees Centigrade t f i - Nanoseconds 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 230 RG = 2Ω , VGE = 15V 4.0 75 I C - Amperes Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 5.0 7 E on - MilliJoules 6 ---- VCE = 400V 4.0 4 Eon 8 RG = 2Ω , VGE = 15V E on - MilliJoules Eoff - MilliJoules Eon - E off - MilliJoules 6 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYH120N65B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 td(on) - - - - 100 100 90 90 TJ = 150ºC, VGE = 15V 80 70 100 60 I C = 100A 80 50 60 40 I C = 50A 40 0 2 4 6 80 30 20 8 10 12 tri VCE = 400V 50 31 40 10 20 14 30 29 50 55 60 65 70 75 80 85 90 95 28 100 40 38 34 60 32 40 30 I C = 50A 28 0 50 32 TJ = 25ºC 30 80 25 33 60 20 36 I C = 100A 20 70 t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2Ω , VGE = 15V 100 34 VCE = 400V I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 120 35 TJ = 150ºC RG - Ohms 140 td(on) - - - - t d(on) - Nanoseconds 120 t r i - Nanoseconds VCE = 400V tri 36 RG = 2Ω , VGE = 15V t d(on) - Nanoseconds t r i - Nanoseconds 140 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 75 100 125 26 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_120N65B3(8D-Y42) 4-23-15