FutureWafer FESD3V3A Chip tvs diode Datasheet

FESD3V3A
Chip TVS Diode
Mechanical Data
Notes
Dice size
AX/AY:450um,BX/BY:310um
Wafer size
4”(Gross die:79500pcs/Good die>73935)
Chip Thickness
A)230um±20um
Scribe line width
60um
Top metal
Al
Back side metal
Ti-Ni-Ag for soldering
Parameter
Symbol
Reverse stand-off voltage
Peak pulse power
Peak pulse current
VRWM
PPP
IPP
Electrostatic discharge
VESD
Max.junction temp.
Characteristics TA=25℃
Tj
Parameter
Conditions
Value
Unit
4.0
300**
28**
V
W
A
Tp=8/20us
Tp=8/20us
IEC61000-4-2
± 15(AIR)
Level 4
± 8(Contact)
+150
KV
℃
Symbol
Condition
Min.
Typ.
Max.
Unit
VBR
IT=1mA
5.2
5.8
6.3
V
Reverse leakage current
IR
VR=3.3V
15.0
uA
Clamping voltage
VC
IPP=1A
6.9
8.4
Diode capacitance
Cj
IPP=5A
VR=0V
f=1MHZ
Breakdown voltage
350
V
pf
Notes:
(1)sampling testing:no bad dice inking/guaranteed good die >93%
(2)100% testing
(3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation,
Pr-revers power dissipation
(4)**For device testing
EW1608E0-FW-A
Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583
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