FESD3V3A Chip TVS Diode Mechanical Data Notes Dice size AX/AY:450um,BX/BY:310um Wafer size 4”(Gross die:79500pcs/Good die>73935) Chip Thickness A)230um±20um Scribe line width 60um Top metal Al Back side metal Ti-Ni-Ag for soldering Parameter Symbol Reverse stand-off voltage Peak pulse power Peak pulse current VRWM PPP IPP Electrostatic discharge VESD Max.junction temp. Characteristics TA=25℃ Tj Parameter Conditions Value Unit 4.0 300** 28** V W A Tp=8/20us Tp=8/20us IEC61000-4-2 ± 15(AIR) Level 4 ± 8(Contact) +150 KV ℃ Symbol Condition Min. Typ. Max. Unit VBR IT=1mA 5.2 5.8 6.3 V Reverse leakage current IR VR=3.3V 15.0 uA Clamping voltage VC IPP=1A 6.9 8.4 Diode capacitance Cj IPP=5A VR=0V f=1MHZ Breakdown voltage 350 V pf Notes: (1)sampling testing:no bad dice inking/guaranteed good die >93% (2)100% testing (3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation, Pr-revers power dissipation (4)**For device testing EW1608E0-FW-A Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583