ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor Description The ACE4606TB uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel VDS=30V ID=7A RDS(ON) < 26mΩ (VGS=10V) RDS(ON) < 45mΩ (VGS=4.5V) P-channel VDS=-30V ID=-4A RDS(ON) < 58mΩ (VGS=-10V) RDS(ON) < 80mΩ (VGS=-4.5V) Absolute Maximum Ratings Drain Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V 7 -4 6 -3 28 -16 Current (Continuous)*AC TA=25°C TA=70°C IDM Drain Current (Pulse) *B Power Dissipation ID TA=25°C TA=70°C Operating Temperature/ Storage Temperature PD TJ,TSTG 2 0.8 -55 to 150 A W O C A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.1 1 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor Packaging Type SOP-8 Ordering information ACE4606TB XX + H Halogen - free Pb - free FM: SOP-8 VER 1.1 2 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor N-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA Gate Leakage Current IGSS VGS=±20V, VDS=0V Static Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current 30 1 V 1.5 1 uA 3 V ±100 nA VGS=10V, ID=5A 23 26 VGS=4.5V, ID=5A 34 45 gFS VDS=5V, ID=7A 14 VSD IS=1A, VGS=0V IS mΩ S 1.2 V 7 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td (on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf VGS=10V, VDS=15V, ID=7A 11.5 1.6 nC 2.8 11 VGS=10V , VDS=10V ID=1A, RGS=6Ω 16 ns 36 20 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS=0V, VDS=15V f=1MHz 520 88 pF 62 VER 1.1 3 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor P-channel Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V Gate Threshold Voltage VGS(th) VDS=VGS, IDS=-250uA Gate Leakage Current IGSS VGS=±20V, VDS=0V Static Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Maximum Body-Diode Continuous Current -30 -1 V -1.5 -1 uA -3 V ±100 nA VGS=-10V, ID=-4A 52 58 VGS=-4.5V, ID=-3A 67 80 gFS VDS=-5V, ID=-4A 10 VSD IS=-1A, VGS=0V IS mΩ S -1.1 V -4 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay Time td (on) Turn-on Rise Time tr Turn-off Delay Time td(off) Turn-off Fall Time tf VGS=-10V, VDS=-15V, ID=-4A 11.5 2.5 nC 2.2 10 VGS=-10V , VDS=-15V ID=1A, RGS=6Ω 10 ns 18 15 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS=0V, VDS=-15V f=1MHz 726 90 pF 76 VER 1.1 4 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor N-channel Typical Performance Characteristics VER 1.1 5 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor VER 1.1 6 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor P-channel Typical Performance Characteristics VER 1.1 7 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor VER 1.1 8 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor Packing Information SOP-8 Units: mm VER 1.1 9 ACE4606TB 30V Complementary Enhancement Mode Field Effect Transistor Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 10