, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJ16010A
MJH16010A
POWER TRANSISTORS
15 AMPERES
500 VOLTS
125 and 175 WATTS
NPN Silicon Power Transistors
1 kV Switchmode III Series
These transistors are designed for high-voltage, high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for lineoperated switchmode applications.
Features:
Typical Applications:
Switching Regulators
• Collector-Emitter Voltage — VCEV = lOOOVdc
Inverters
• Fast Turn-Off Times
50 ns Inductive Fall Time - 100°C (Typ)
Solenoids
90 ns Inductive Crossover Time - 100°C (Typ)
Relay Drivers
900 ns Inductive Storage Time - 100°C (Typ)
Motor Controls
Deflection Circuits
• 100°C Performance Specified for:
Reverse-Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
• Extended FBSOA Rating Using Ultra-fast
Rectifiers
• Extremely High RBSOA Capability
MAXIMUM RATINGS
Rating
Symbol
MJ16010A
MJH16010A
Unit
Collector-Emitter Voltage
VCEO
500
Vdc
Collector-Emitter Voltage
VCEV
1000
Vdc
Emitter-Base Voltage
VEB
6
Vdc
Collector Current — Continuous
— PeakU)
ic
'CM
IB
IBM
15
20
Adc
10
15
Adc
Base Current — Continuous
— Peakd)
PD
Total Power Dissipation ffi TC = 25°C
(ii TC =• 100°C
Derate above TC = 25°C
Operating and Storage Junction
Temperature Range
Tj, Tstg
175
100
1
135
54
1.09
Watts
-65 to 200
-55 to 150
•c
TO-204AA
MJ16010A
W/°C
1O-218AC
MJH16010A
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
Lead Temperature for Soldering
Purposes: 1/8" from Case for
5 Seconds
R&JC
TL
Unit
Max
1
|
275
0.92
°C/W
•c
{1) Pulse Test: Pulso Width - 5 ms. Duty Cycle s 10%.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ16010A, MJH16010A
ELECTRICAL CHARACTERISTICS (Tc = 25'C unless otherwise noted)
Characteristic
Symbol
Mln
Tvp
Max
Unit
VCEO(SUS)
500
—
—
Vdc
-
0.003
0.020
0.15
OFF CHARACTERISTICS!!)
Collector-Emitter Sustaining Voltage (Table 1)
dc - loomA, iB = o)
mAdc
Collector Cutoff Current
(VcEV = 1000 Vdc. VBE(oH) = I.SVdc)
(VCEV = 1000 Vdc, VBE(off) = 1.5 Vdc, TC - 100°C)
!CEV
Collector Cutoff Current
ICER
—
0.020
1.0
mAdc
IEBO
—
0.005
0.15
mAdc
(VCE - 1000 Vdc, RBE = BO n, TC = loo-ci
Emitter Cutoff Current
1.0
(VEB = 6 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/D
See Figure 14a or 14b
RBSOA
See Figure 15
ON CHARACTERISTICS^
Collector-Emitter Saturation Voltage
0.25
0.45
0.60
0.7
1
1.6
-
1.2
1.2
1.5
1.5
hFE
5
8
—
—
Cob
—
—
400
PF
900
2000
ns
SO
250
90
300
1100
—
-
Base-Emitter Saturation Voltage
Vdc
vBE(sat)
dC = 10 Adc, IB = 2 Adc)
dC = 10 Adc, IB = 2 Adc, TC = 100"C)
DC Current Gain
dC = 15 Adc, VCE =
Vdc
VcE(sat)
UC = 5 Adc, IB = 1 Adc)
dC = 10 Adc, IB = 2 Adc)
(1C = 10 Adc, IB - 2 Adc, TC = 100'C)
5Vdc >
DYNAMIC CHARACTERISTICS
Output Capacitance
(VcB = 10 Vdc, IE = 0, ftest - 1 kHz)
SWITCHING CHARACTERISTICS
Inductive Load [Table 1)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
'c
—
—
-
tsv
—
tfi
—
—
>sv
(Tj = 100-CI
dC = 10 Adc,
IBI = 1.3 Adc,
VBE(off) = 5 Vdc,
VcE(pk) = 400 v<te>
(Tj = 150'CI
Crossover Time
tfi
'c
70
—
120
-
Resistive Load (Table 2)
Storage Time
Fall Time
Storage Tlma
tf
—
—
-
ts
—
700
—
tf
-
80
-
td
Delay Time
Rise Time
dC = 10 Adc,
Vcc = 250 Vdc,
IBI - 1.3 Adc,
PW = 30 us,
Duty Cycle « 2%l
Fall Time
ID PullB T«st: PW . 300 ^s. Duty Cyclo f 2%.
(IB2 = 2.6 Adc.
R B2 = 1.8 0)
WBE(off) = 5 Vdc)
tr
<s
25
100
325
600
1300
3000
175
400
ns