DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RSS(ON) Max IS TA = +25°C 3.2mΩ @ VGS = 4.5V 23.6A 6.3mΩ @ VGS = 2.5V 16.8A BVSSS 12V Features CSP with Footprint 3.54mm × 1.77mm Height = 0.21mm for Low Profile ESD Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET has been designed to minimize the onstate resistance (RSS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Case: X3-DSN3518-6 Terminal Connections: See Diagram Below Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Battery Management Load Switch Battery Protection G1 1. Source 1 2. Gate 1 3. Source 1 4. Source 2 5. Gate 2 6. Source 2 ESD PROTECTED G2 Top View S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN1003UCA6-7 Notes: Case X3-DSN3518-6 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information M1 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: E= 2017) M or M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN1003UCA6 Document number: DS39389 Rev. 4 - 2 Mar 3 2017 E Apr 4 May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D June 2017 © Diodes Incorporated DMN1003UCA6 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VSSS VGSS Source-Source Voltage Gate-Source Voltage Continuous Source Current (Note 5) VGS = 4.5V Steady State Continuous Source Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 12 ±8 23.6 18.9 IS Unit V V A ISM 16.8 13.4 100 Symbol PD RθJA PD RθJA TJ, TSTG Value 1.05 120.7 2.67 46.8 -55 to +150 IS Pulsed Source Current (Note 6) A A Thermal Characteristics Characteristic Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 7) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Electrical Characteristics Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage Zero Gate Voltage Source Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVSSS ISSS IGSS 12 - - 1 ±10 V A A VGS = 0V, IS = 1mA VSS = 10V, VGS = 0V VGS = ±8V, VSS=0V VGS(TH) RSS(ON) VSS 2.3 2.4 2.5 2.7 3.0 0.7 1.3 3.2 3.2 3.2 4.4 6.3 1.2 V Static Source-Source On-Resistance 0.5 1.2 1.2 1.3 1.3 1.4 - VSS = 6V, IS = 1mA VGS = 4.5V, IS = 5A VGS = 4.0V, IS = 5A VGS = 3.8V, IS = 5A VGS = 3.1V, IS = 5A VGS = 2.5V, IS = 5A VGS = 0V, IS = 3A Ciss Coss Crss Qg Qgs Qgd Qg(TH) tD(ON) tR tD(OFF) tF - 3315 850 248 56.5 8.8 13.3 6.9 603 1694 4749 6208 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at VTH Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ V Test Condition pF VSS = 6V, VGS = 0V, f = 1.0MHz nC VSS = 6V, VGS = 4.5V, IS = 27A ns VSS = 6V, VGS = 4.5V, IS = 3A 5. Device mounted on FR-4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN1003UCA6 Document number: DS39389 Rev. 4 - 2 2 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN1003UCA6 30 30.0 VSS=5V VGS = 2.0V 25.0 VGS = 3.0V IS, SOURCE-SOURCE CURRENT (A) IS, SOURCE-SOURCE CURRENT (A) VGS = 1.5V VGS = 1.2V VGS = 4.5V 20.0 VGS = 8.0V 15.0 10.0 VGS = 1.1V 5.0 VGS = 1.0V 20 15 10 0.5 1 1.5 2 2.5 3 3.5 VSS, SOURCE-SOURCE VOLTAGE(V) Figure 1. Typical Output Characteristic 5 TJ= 25℃ TJ= 125℃ TJ=-55℃ 0.0034 0.0032 VGS = 2.5V 0.003 0.0028 VGS = 3.8V 0.0026 VGS = 4.5V 0.0024 0.4 4 RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) 0 0.0022 0.002 0.06 0.0035 TJ= 150℃ TJ= 125℃ TJ= 85℃ 0.003 TJ= 25℃ 0.0025 TJ=-55℃ 0.002 0.0015 0.02 0 5 10 15 20 25 30 IS, SOURCE-SOURCE CURRENT (A) Figure 5. Typical On-Resistance vs. Source Current and Junction Temperature Document number: DS39389 Rev. 4 - 2 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 0 DMN1003UCA6 IS = 5.0A 0.04 0 RSS(ON), SOURCE-SOURCE ON-RESISTANCE (NORMALIZED) VGS=4.5V 1.4 0.08 5 10 15 20 25 30 IS, SOURCE-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Source Current and Gate Voltage 0.004 0.6 0.8 1 1.2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.1 0 RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) TJ= 85℃ TJ= 150℃ 0 0.0 RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) 25 3 of 7 www.diodes.com 1.8 1.6 VGS = 3.8V, IS = 5A 1.4 1.2 VGS = 2.5V, IS = 5A VGS = 4.5V, IS = 5A 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature June 2017 © Diodes Incorporated 0.9 0.005 0.004 VGS(TH), GATE THRESHOLD VOLTAGE (V) RSS(ON), SOURCE-SOURCE ON-RESISTANCE (Ω) DMN1003UCA6 VGS = 2.5V, IS = 5A 0.003 VGS = 3.8V, IS = 5A 0.002 VGS = 4.5V, IS = 5A 0.001 0.8 0.7 0.6 0.5 IS = 250μA 0.4 0.3 0.2 0.1 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -25 25 50 75 100 125 150 10000 CT, JUNCTION CAPACITANCE (pF) VGS = 0V 8 6 4 TJ= 85℃ TJ= 150℃ TJ= 25℃ 2 TJ= 125℃ f=1MHz Ciss TJ= -55℃ 0 0.2 0.4 0.6 Coss 1000 Crss 100 0 0.8 0 1 2 4 6 8 10 VSS, SOURCE-SOURCE VOLTAGE(V) Figure 10. Typical Junction Capacitance VSS, SOURCE-SOURCE VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 12 1000 8 IS, SOURCE-SOURCE CURRENT (A) RSS(ON) LIMITED 7 6 5 VGS (V) 0 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10 IS, SOURCE-SOURCE CURRENT (A) IS= 1mA 4 3 VSS = 6V, IS = 27A 2 1 PW =1ms 10 0 10 20 30 40 50 60 70 80 90 100 Qg (nC) Figure 11. Gate Charge DMN1003UCA6 Document number: DS39389 Rev. 4 - 2 4 of 7 www.diodes.com PW =10ms PW =100ms 1 0.1 0.01 0 PW =100µs 100 TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on 1*MRP Board VGS=4.5V 0.01 PW =1s PW =10s DC 0.1 1 10 VSS, SOURCE-SOURCE VOLTAGE(V) Figure 12. SOA, Safe Operation Area 100 June 2017 © Diodes Incorporated DMN1003UCA6 r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA= 117℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) 100 1000 Figure 13. Transient Thermal Resistance DMN1003UCA6 Document number: DS39389 Rev. 4 - 2 5 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN1003UCA6 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X3-DSN3518-6 e2 D e2 e1 E e b2 L Ø b(2x) A X3-DSN3518-6 Dim Min Max Typ A 0.16 0.26 0.21 b 0.22 0.28 0.25 b2 0.22 0.28 0.25 D 3.49 3.59 3.54 E 1.72 1.82 1.77 e 0.47 0.53 0.50 e1 0.22 0.28 0.25 e2 0.97 1.03 1.00 L 1.22 1.28 1.25 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X3-DSN3518-6 C1 Dimensions C C1 D X C X DMN1003UCA6 Document number: DS39389 Rev. 4 - 2 Value (in mm) 0.50 2.00 0.25 1.25 Ø D 6 of 7 www.diodes.com June 2017 © Diodes Incorporated DMN1003UCA6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN1003UCA6 Document number: DS39389 Rev. 4 - 2 7 of 7 www.diodes.com June 2017 © Diodes Incorporated