Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 1/8 CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor BVCEO IC VCESAT(Max) BTA1797M3 -50V -2A -0.2V Description • Low saturation voltage, VCE(SAT) = -0.2V(max.) at IC/IB=-1A/-50mA. • High current capability. • Excellent DC current gain characteristics. • Pb-free lead plating and halogen-free package. Symbol Outline BTA1797M3 SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol Limits Unit VCBO VCEO VEBO IC ICP -50 -50 -7 -2 -5 0.5 1 2 V V V A A W W W °C/W °C/W °C/W °C °C PD Thermal Resistance, Junction to Ambient RθJA Operating Junction Temperature Range Storage Temperature Range Tj Tstg Note : 1. Single Pulse Pw≦300μs, Duty≦2%. (Note 1) (Note 2) (Note 3) 250 125 (Note 2) 62.5 (Note 3) -55~+150 -55~+150 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on ceramic with area measuring 40×40×1 mm BTA1797M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) hFE1 hFE2 hFE3 fT Cob Min. -50 -50 -7 180 200 120 - Typ. -0.1 -0.19 -0.85 -0.78 180 24 Max. -100 -100 -0.2 -0.5 -1.2 -1 400 - Unit V V V nA nA V V V V MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-50V, IE=0 VEB=-7V, IC=0 IC=-1A, IB=-50mA IC=-2A, IB=-100mA IC=-1A, IB=-50mA VCE=-2V, IC=-1A VCE=-2V, IC=-20mA VCE=-2V, IC=-500mA VCE=-2V, IC=-1A VCE=-2V, IC=-300mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Ordering Information Device BTA1797M3-0-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Recommended soldering footprint BTA1797M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 1.6 0.4 1mA 0.3 0.25 0.2 500uA 400uA 300uA 0.15 0.1 200uA -IB=100uA 0.05 5mA 1.4 -IC, Collector Current(A -IC, Collector Current(A 0.35 1.2 1 2.5mA 0.8 2mA 0.6 1.5mA 0.4 0.2 0 -IB=500uA 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Emitter Grounded Output Characteristics 3.5 Emitter Grounded Output Characteristics 5 20mA -IC, Collector Current(A -IC, Collector Current(A 2.5 8mA 6mA 1.5 50mA 4.5 3 2 4mA 1 -IB=2mA 0.5 4 3 25mA 20mA 15mA 2.5 10mA 3.5 2 -IB=5mA 1.5 1 0.5 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 Current Gain vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=-1V VCE=-2V Current Gain---HFE Current Gain---HFE 6 Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 100 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 BTA1797M3 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 4/8 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT@IC=10IB Saturation Voltage---(mV Current Gain---HFE VCE=-5V 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 Saturation Voltage vs Collector Current 1000 VCESAT@IC=50IB Saturation Voltage---(mV VCESAT@IC=20IB Saturation Voltage---(mV 10000 Saturation Voltage vs Collector Current 1000 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 10 1 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 VBEON@VCE=-2V On Voltage---(mV) VBESAT@IC=10IB Saturation Voltage---(mV 100 1000 -IC, Collector Current(mA) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 100 1 BTA1797M3 10 100 1000 -IC, Collector CurrentmA) Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 1000 100 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 5/8 CYStech Electronics Corp. Typical Characteristics(Cont.) Cutoff Frequency vs Collector Current Capacitance vs Reverse-biased Voltage 1000 VCE=-2V Capacitance---(pF) Cutoff Frequency---fT(MHz 1000 100 Cib 100 Cob 10 10 1 10 100 -IC, Collector Current(mA) 1000 0.1 1 10 -VR, Reverse-biased Voltage(V) 100 Power Derating Curves 2.5 Power Dissipation---PD(W Please see Note 3 on page 1 2 Please see Noe 2 on page 1 1.5 1 0.5 0 0 BTA1797M3 50 100 150 Ambient Temeprature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BTA1797M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTA1797M3 CYStek Product Specification Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2013.08.12 Page No. : 8/8 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 Device Code H C Date Code AG □□ D B E I F G Style: Pin 1. Base 2. Collector 3. Emitter 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical Inches Min. Max. 0.1732 0.1811 0.1551 0.1673 0.0610 REF 0.0906 0.1024 0.0126 0.0205 DIM A B C D E Millimeters Min. Max. 4.40 4.60 3.94 4.25 1.55 REF 2.30 2.60 0.32 0.52 DIM F G H I Inches Min. Max. 0.0591 TYP 0.1181 TYP 0.0551 0.0630 0.0138 0.0173 Millimeters Min. Max. 1.50 TYP 3.00 TYP 1.40 1.60 0.35 0.44 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1797M3 CYStek Product Specification