BC808-25LT1G, BC808-40LT1G General Purpose Transistors PNP Silicon www.onsemi.com Features COLLECTOR 3 • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO −25 V Collector − Base Voltage VCBO −30 V Emitter − Base Voltage VEBO −5.0 V IC −500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W Collector Current − Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature October, 2016 − Rev. 5 2 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM PD RqJA 5x M G G 1 5x PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2004 1 1 M G = Device Code x = F or G = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BC808−25LT1/D BC808−25LT1G, BC808−40LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = −10 mA) V(BR)CEO −25 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = −10 mA) V(BR)CES −30 − − V Emitter −Base Breakdown Voltage (IE = −1.0 mA) V(BR)EBO −5.0 − − V − − − − −100 −5.0 nA mA 160 250 40 − − − 400 600 − Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = −20 V) (VCB = −20 V, TJ = 150°C) ICBO ON CHARACTERISTICS DC Current Gain (IC = −100 mA, VCE = −1.0 V) hFE BC808−25LT1G BC808−40LT1G (IC = −500 mA, VCE = −1.0 V) − Collector −Emitter Saturation Voltage (IC = −500 mA, IB = −50 mA) VCE(sat) − − −0.7 V Base −Emitter On Voltage (IC = −500 mA, IB = −1.0 V) VBE(on) − − −1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device BC808−25LT1G SBC808−25LT1G BC808−40LT1G Specific Marking Package Shipping† 5F SOT−23 (Pb−Free) 3000 / Tape & Reel 5G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 BC808−25LT1G, BC808−40LT1G 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25°C 100 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 -1.0 -1.0 TA = 25°C TJ = 25°C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 0 -1.0 -100 -1000 100 +1.0 qVC for VCE(sat) 0 -1.0 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 3. “On” Voltages C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 2. Saturation Region -2.0 VBE(sat) @ IC/IB = 10 qVB for VBE -10 -100 IC, COLLECTOR CURRENT Cib 10 Cob 1.0 -0.1 -1000 Figure 4. Temperature Coefficients -1.0 -10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances www.onsemi.com 3 -100 BC808−25LT1G, BC808−40LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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