DMP3065LVT P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V(BR)DSS -30V Features and Benefits RDS(ON) max ID max TA = +25°C 42mΩ @ VGS = -10V -5.1A 65mΩ @ VGS = -4.5V -4.0A Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.015 grams (Approximate) TSOT26 D 1 6 D D 2 5 D G 3 4 S ESD PROTECTED Top View Top View Internal Schematic Equivalent Circuit Ordering Information (Note 4) Part Number DMP3065LVT-7 DMP3065LVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 65P = Product Type Marking Code YM = Date Code Marking Y or Y̅ = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP3065LVT Document number: DS36697 Rev. 4 - 2 Mar 3 2013 A Apr 4 2014 B May 5 Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 2016 D Aug 8 Sep 9 2017 E Oct O 2018 F Nov N Dec D December 2014 © Diodes Incorporated DMP3065LVT Maximum Ratings P-Channel (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage Symbol Value Units VDSS -30 V VGSS ±20 V Continuous Drain Current (Note 5) VGS = -10V Steady State TA = +25°C TA = +70°C ID -5.1 -4.2 A Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -4.0 -3.2 A IS -2.0 A Maximum Body Diode Continuous Current Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 6) PD 1.2 W 102 °C/W PD 1.6 W RθJA 78 °C/W TJ, TSTG -55 to +150 °C Total Power Dissipation (Note 5) Steady State Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Units RθJA Steady State Thermal Resistance, Junction to Ambient (Note 6) Value Electrical Characteristics P-Channel (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage @TJ = +25°C Symbol Min Typ Max Unit Test Condition BVDSS -30 — — V VGS = 0V, ID = -250μA IDSS — — -1 μA VDS = -24V, VGS = 0V IGSS — — ±10 μA VGS = ±20V, VDS = 0V V VDS = VGS, ID = -250μA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS (ON) -1 -1.7 -2.1 — 34 42 — 52 65 8.5 — S VDS = -5V, ID = -4.9A V VGS = 0V, IS = -1A pF VDS = -15V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -4.9A ns VDD = -15V, VGS = -10V, ID = -4.9A, RG = 6Ω Forward Transfer Admittance |Yfs| — Diode Forward Voltage VSD — -0.75 -1.2 Input Capacitance Ciss — 587 880 Output Capacitance Coss — 160 240 Reverse Transfer Capacitance Crss — 84 130 Total Gate Charge (VGS = -4.5V) Qg — 6.3 10 Total Gate Charge (VGS = -10V) Qg — 12.3 20 Qgs — 1.9 4 Gate-Drain Charge Qgd — 2.5 5 Turn-On Delay Time tD(on) — 5.7 10 Turn-On Rise Time tr — 11.8 22 Turn-Off Delay Time tD(off) — 21.8 35 tf — 23.9 40 mΩ VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.7A DYNAMIC CHARACTERISTICS (Note 8) Gate-Source Charge Turn-Off Fall Time Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP3065LVT Document number: DS36697 Rev. 4 - 2 2 of 6 www.diodes.com December 2014 © Diodes Incorporated DMP3065LVT 20.0 20 18.0 VGS = -4.5V 18 VGS = -4.0V 16 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16.0 14.0 14 12.0 12 VGS = -3.5V 10.0 10 8.0 6.0 VGS = -3.0V 4.0 6 TA = 150C 0.0 0 1 2 3 4 -V DS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics T A = 125 C TA = -55 C 0 0 5 0.1 T A = 85C TA = 25C 2 VGS = -2.5V 1 2 3 4 -V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 8 4 2.0 0.08 VGS = -4.5V 0.06 0.04 VGS = -10V 0.02 0 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.45 0.4 ID = -3.7A 0.35 0.3 0.25 ID = -4.9A 0.2 0.15 0.1 0.05 20 0 0 0.14 1.8 0.12 1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION VDS = -5.0V VGS = -10V 0.1 TA = 150C 0.08 TA = 125C TA = 85C 0.06 TA = 25 C 0.04 T A = -55C 0.02 2 4 6 8 10 12 14 16 18 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 20 VGS = -10V ID = -4.9A 1.4 1.2 VGS = -4.5V ID = -3.7A 1 0.8 0.6 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3065LVT Document number: DS36697 Rev. 4 - 2 20 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature December 2014 © Diodes Incorporated 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0.1 0.08 VGS = -4.5V ID = -3.7A 0.06 0.04 VGS = -10V ID = -4.9A 1.8 -I D = 250µA 1.6 -ID = 1mA 1.4 1.2 1 0.8 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 On-Resistance Variation with Temperature 20 2 0.6 -50 0.02 -50 10000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) 18 -IS, SOURCE CURRENT (A) 16 14 1000 T A = 150°C 12 T A = 125°C 10 T A = 85°C 8 T A = 25°C 6 T A = -55°C 4 Ciss C oss 100 Crss 2 0 0 10 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 10 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 R DS(on) Limited PW = 100µs 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP3065LVT VDS = 15V ID = 4.9A 6 4 2 0 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 T J (m ax ) = 150°C T A = 25°C V GS = 10V Single Pulse 0.01 DUT on 1 * MRP Board 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP3065LVT Document number: DS36697 Rev. 4 - 2 14 4 of 6 www.diodes.com 0.1 PW = 10ms PW = 1ms 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 December 2014 © Diodes Incorporated DMP3065LVT r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja(t) = r(t) * Rthja Rthja = 96°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.001 0.0001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMP3065LVT Document number: DS36697 Rev. 4 - 2 5 of 6 www.diodes.com December 2014 © Diodes Incorporated DMP3065LVT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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