NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and pulsed applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Efficiency (>60%) Applications Defense Communications Land Mobile Radio Avionics Wireless Infrastructure ISM Applications VHF/UHF/L/S-Band Radar DC-6 GHz 25W GaN HEMT Product Description The NPT2019 GaN HEMT is a wideband transistor optimized for DC-6 GHz operation. This device has been designed for CW, pulsed, and linear operation with pulsed output power levels to 25W (44 dBm) in an industry standard surface mount plastic package. RF Specifications (Pulsed*, 2.5 GHz): VDS = 48V, IDQ = 150mA, TC= 25°C Symbol Parameter Min Typ Max Units G SS Small-signal Gain - 16.2 - dB PSAT Saturated Output Power - 44.8 - dBm SAT Efficiency at Saturated Output Power - 60 - % Gain at POUT = 25W* - 16 - dB Drain Efficiency at POUT = 25W* - 55 - % Drain Voltage - 48 - V GP VDS Ruggedness: Output Mismatch, all phase angles VSWR = TBD:1, No Device Damage * Pulse Conditions: 100µS pulse width, 10% duty cycle Preliminary Datasheet Page 1 NDS-043 Rev. 2, 012414 NPT2019 Preliminary DC Specifications: TC = 25°C Symbol Parameter Min Typ Max Units Off Characteristics IDLK Drain-Source Leakage Current (VGS=-8V, VDS=160V) - - 6 mA IGLK Gate-Source Leakage Current (VGS=-8V, VDS=0V) - - 3 mA On Characteristics VT Gate Threshold Voltage (VDS=48V, I D=6mA) -2.5 -1.5 -0.5 V VGSQ Gate Quiescent Voltage (VDS=48V, I D=150mA) -2.1 -1.2 -0.3 V RON On Resistance (VDS=2V, I D=45mA) - 0.75 - Maximum Drain Current (VDS=7V pulsed, 300µS pulse width, 0.2% Duty Cycle) - 3.5 - A Typ Units 3.8 °C/W ID, MAX Thermal Resistance Specification: Symbol RJC Parameter Thermal Resistance (Junction-to-Case), TJ = 200 °C Junction Temperature (TJ) measured using IR Microscopy, Case Temperature (TC) measured using a thermocouple embedded in heatsink. Absolute Maximum Ratings: Not simultaneous, TC = 25°C unless otherwise noted Symbol Parameter Max Units VDS Drain-Source Voltage 160 V VGS Gate-Source Voltage -10 to 3 V IG Gate Current 12 mA PT Total Device Power Dissipation (Derated above 25°C) 46 W -65 to 150 °C 200 °C TSTG TJ Storage Temperature Range Operating Junction Temperature HBM Human Body Model ESD Rating (per JESD22-A114) MSL Moisture sensitivity level (per IPC/JEDEC J-STD-020) Preliminary Datasheet Page 2 Class 1B TBD NDS-043 Rev. 2, 012414 NPT2019 Preliminary Load-Pull Data, Reference Plane at Device Leads VDS=48V, IDQ=150mA, TC=25C unless otherwise noted Optimum Source and Load Impedances: (Pulsed CW* Drain Efficiency and Output Power Tradeoff Impedance) Frequency ZS () PSAT (W) ZL () GSS (dB) Drain Efficiency (MHz) @ PSAT (%) 900 4.0 + j4.5 9.8 + j17.3 36 26.0 63 2500 2.7 - j3.9 5.7 + j9.0 35 17.0 58 4000 2.5 - j10.9 4.9 + j4.0 34 13.5 55 5800 3.1 - j13.5 2.8 - j2.8 30 12.5 52 * Pulse Conditions: 100µS pulse width, 10% duty cycle Figure 1: CW Power/Drain Efficiency Tradeoff Impedances, ZO=20 30 70 60 20 Drain Efficiency (%) Gain (dB) 25 900MHz 2500MHz 4000MHz 5800MHz 15 50 40 900MHz 2500MHz 4000MHz 5800MHz 30 20 10 10 25 30 35 40 45 50 POUT (dBm) 30 35 40 45 50 POUT (dBm) Figure 3: Efficiency vs. POUT Figure 2: Gain vs. POUT Preliminary Datasheet 0 25 Page 3 NDS-043 Rev. 2, 012414 NPT2019 Preliminary Figure 1 - DFN3X6-14 Plastic Package Dimensions (all dimensions in inches [millimeters]) Pin Function 10, 11, 12 Gate — RF Input 2-6 Drain — RF Output Exposed Pad Source — Ground 1, 7, 8, 9, 13, 14 No Connect* * All No Connect pins may be left floating or grounded Preliminary Datasheet Page 4 NDS-043 Rev. 2, 012414 NPT2019 Preliminary Nitronex, LLC 523 Davis Drive, Suite 500 Morrisville, NC 27560 USA +1.919.807.9100 (telephone) +1.919.4 7 2.0692 (fax) [email protected] www.nitronex.com Additional Information This part is lead-free and is compliant with the RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). 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All other product or service names are the property of their respective owners. © Nitronex, LLC 2014 All rights reserved. Preliminary Datasheet Page 5 NDS-043 Rev. 2, 012414