Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 1/12 CYStech Electronics Corp. N- AND P-Channel Logic Level Enhancement Mode MOSFET MTC2590V8 BVDSS ID RDSON(MAX.) N-CH 30V 6A 23mΩ P-CH -30V -5A 50mΩ Description The MTC2590V8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single DFN3×3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN3×3 package is universally preferred for all commercial-industrial surface mount applications. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline DFN3×3 MTC2590V8 G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTC2590V8-0-T6-G Package Shipping DFN3×3 3000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTC2590V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 2/12 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Gate-Source Voltage VGS Continuous Drain Current *2 TA=25 °C, VGS=10V (-10V) ID TA=70 °C, VGS=10V (-10V) Pulsed Drain Current Total Power Dissipation Limits N-channel P-channel 30 -30 IDM *1 Single device operation Single device value at dual operation Operating Junction and Storage Temperature Range ±20 ±20 6 -5 4.8 -4 30 -30 Unit V A 1.5 *2 PD 1.24 *2 Tj; Tstg °C -55~+150 Thermal Data Parameter Symbol Max. Thermal Resistance, Junction-to-ambient, single device operation Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation Rth,j-a Value 84 *2 101 *2 Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics. 216°C/W when mounted on a minimum pad of 2 oz. copper. N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. 30 1 - 1.8 16 28 7 2.5 ±100 1 10 23 40 - - 758 55 61 8 7 24 13 11 2.9 3.2 - - 0.78 29 10 1.2 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr S VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=30V, VGS=0V VDS=24V, VGS=0V, Tj=70°C VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=5V, ID=6A pF VDS=20V, VGS=0V, f=1MHz ns VDS=15V, ID=1A, VGS=10V, RG=6Ω nC VDS=15V, ID=6A, VGS=10V V ns nC VGS=0V, IS=2.3A V nA μA mΩ IS=5A, VGS=0V, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTC2590V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 3/12 P-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. -30 -1.0 - -1.7 38 61 7 -2.5 ±100 -1 -10 50 80 - - 838 64 65 9 7 40 13 14 3.6 3.3 - - -0.82 32 13.5 -1.2 - Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS S VGS=0, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-30V, VGS=0V VDS=-24V, VGS=0V, Tj=70°C VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A VDS=-5V, ID=-5A pF VDS=-20V, VGS=0V, f=1MHz ns VDS=-15V, ID=-1A, VGS=-10V, RG=6Ω nC VDS=-15V, ID=-5A, VGS=-10V V VGS=0V, IS=-2.3A ns nC IS=-4.5A, VGS=0V, dI/dt=100A/μs V nA μA mΩ Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Body Diode *VSD *trr *Qrr *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm MTC2590V8 CYStek Product Specification Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 4/12 CYStech Electronics Corp. Typical Characteristics : Q1( N-channel ) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V, 9V, 8V, 7V, 6V, 5V, 4V 25 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 30 20 15 VGS=3V 10 1.2 1 0.8 5 0.4 0 0 1 2 3 4 5 6 7 8 9 -75 10 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage VGS=3V VGS=3.5V VGS=4V VSD, Source-Drain Voltage(V) 1.2 VGS=4.5V 100 VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 VGS=10V 10 0.01 0.2 0.1 1 ID, Drain Current(A) 10 0 100 200 4 6 8 IDR , Reverse Drain Current(A) 10 1.8 R DS(on), Normalized Static DrainSource On-State Resistance 180 160 140 120 100 80 ID=6A ID=4A 60 40 20 1.6 VGS=10V, ID=6A 1.4 1.2 1 VGS=4.5V, ID=4A 0.8 0.6 0.4 0 0 MTC2590V8 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on), Static Drain-Source OnState Resistance(mΩ) -50 VDS, Drain-Source Voltage(V) 1000 RDS(on) , Static Drain-Source On-State Resistance(mΩ) ID=250μA, VGS=0V 0.6 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 5/12 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q1( N-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), NormalizedThreshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss Crss 100 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 -40 -20 100 Forward Transfer Admittance vs Drain Current VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 0.1 VDS=10V Pulsed Ta=25°C 0.01 0.001 VDS=15V ID=6A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 6 8 10 12 7 RDS(ON) Limited 100μs 1ms 1 10ms 100ms TA=25°C, Tj=150°C, VGS=10V, RθJA=84°C/W Single Pulse 1s DC ID, Maximum Drain Current(A) ID, Drain Current(A) 4 Maximum Drain Current vs JunctionTemperature 100 6 5 4 3 2 1 TA=25°C, VGS=10V, RθJA=84°C/W 0 0.1 1 10 VDS, Drain-Source Voltage(V) MTC2590V8 2 Qg, Total Gate Charge(nC) Maximum Safe Operating Area 0.01 0.01 60 80 100 120 140 160 10 1 0.1 20 40 Gate Charge Characteristics 10 10 0 Tj, Junction Temperature(°C) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 6/12 Typical Characteristics(Cont.) : Q1( N-channel) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Ambient 200 30 180 160 20 140 Power (W) ID, Drain Current(A) VDS=10V 25 15 10 TJ(MAX) =150°C TA=25°C θJA=84°C/W 120 100 80 60 40 5 20 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=84 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTC2590V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 7/12 Typical Characteristics : Q2( P-channel) Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 -ID, Drain Current (A) 25 -BVDSS, Normalized Drain-Source Breakdown Voltage 30 10V, 9V, 8V, 7V, 6V, 5V 20 -VGS=4V 15 10 -VGS=3V 5 1.4 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 0.4 0 0 1 2 3 4 5 6 7 8 -VDS, Drain-Source Voltage(V) 9 -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=-3V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=-4V 100 VGS=-4.5V VGS=-10V VGS=0V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 2 4 6 8 -IDR, Reverse Drain Current (A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 200 1.6 180 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 160 140 120 100 ID=-5A ID=-4A 80 60 40 1.4 VGS=-10V, ID=-5A 1.2 1 VGS=-4.5V, ID=-4A 0.8 0.6 20 0.4 0 0 MTC2590V8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 8/12 Typical Characteristics(Cont.) : Q2(P-channel) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) ,Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 ID=-250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 -VDS, Drain-Source Voltage(V) -60 -40 -20 100 20 40 60 80 100 120 140 160 Gate Charge Characteristics 10 10 -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance-(S) Forward Transfer Admittance vs Drain Current 1 0.1 VDS=-10V Pulsed Ta=25°C VDS=-15V ID=-5A 8 6 4 2 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 0 10 Maximum Safe Operating Area 2 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 Maximum Drain Current vs JunctionTemperature 100 6 RDS(ON) Limited 10 100μs 1ms 10ms 1 100ms TA=25°C, Tj=150°C, VGS=-10V, RθJA=84°C/W Single Pulse 0.1 1s DC 0.01 -ID, Maximum Drain Current(A) -ID, Drain Current (A) 0 Tj, Junction Temperature(°C) 5 4 3 2 1 TA=25°C, VGS=-10V, RθJA=84°C/W 0 0.01 MTC2590V8 0.1 1 10 -VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 Tj, Junction Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 9/12 CYStech Electronics Corp. Typical Characteristics(Cont.) : Q2(P-channel) Typical Transfer Characteristics Single Pulse Power Rating, Junction to Ambient 30 200 VDS=10V 180 160 20 Power (W) ID, Drain Current(A) 25 15 TJ(MAX) =150°C TA=25°C θJA=84°C/W 140 120 100 80 10 60 40 5 20 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 0 0.0001 5 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 4.RθJA=84 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) MTC2590V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 10/12 Reel Dimension Carrier Tape Dimension MTC2590V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 11/12 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTC2590V8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C839V8 Issued Date : 2013.09.26 Revised Date : Page No. : 12/12 DFN3×3 Dimension Marking: D1 D1 D2 D2 Date Code 2590 S1 G1 S2 G2 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Millimeters Min. Max. 0.650 0.850 0.152 REF 0.000 0.050 2.900 3.100 0.935 1.135 0.280 0.480 2.900 3.100 3.150 3.450 1.535 1.935 DIM A A1 A2 D D1 D2 E E1 E2 Inches Min. Max. 0.026 0.033 0.006 REF 0.000 0.002 0.114 0.122 0.037 0.045 0.011 0.019 0.114 0.122 0.124 0.136 0.060 0.076 DIM b e L L1 L2 L3 H θ Millimeters Min. Max. 0.200 0.400 0.550 0.750 0.300 0.500 0.180 0.480 0.000 0.100 0.000 0.100 0.315 0.515 9° 13° Inches Min. Max. 0.008 0.016 0.022 0.030 0.012 0.020 0.007 0.019 0.000 0.004 0.000 0.004 0.012 0.020 9° 13° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTC2590V8 CYStek Product Specification