DMP4047LFDE 40V P-CHANNEL ENHANCEMENT MODE MOSFET V(BR)DSS -40V Features Package 33mΩ @ VGS = -10V U-DFN2020-6 Type E 50mΩ @ VGS = -4.5V • • • • • • • ID max TA = +25°C RDS(ON) max -6A -4.9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: U-DFN2020-6 Type E Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (approximate) • • Applications General Purpose Interfacing Switch Load Switching Battery Management Application Power Management Functions • D U-DFN2020-6 Type E Pin1 G S Bottom View Equivalent Circuit Pin Out Bottom View Ordering Information (Note 4) Part Number DMP4047LFDE-7 DMP4047LFDE-13 Notes: Marking PE PE Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information PE Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP4047LFDE Datasheet number: DS35777 Rev. 5 - 2 Mar 3 PE = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Product Summary 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D July 2012 © Diodes Incorporated DMP4047LFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s Continuous Drain Current (Note 6) VGS = 10V Steady State t<5s ID Value -40 ±20 -3.3 -2.6 ID -5.3 -4.2 A ID -6.0 -4.8 A A -9.5 -7.6 -40 3 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<5s TA = +25°C TA = +70°C Steady state t<5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.7 0.42 180 76 2.1 1.3 58 25 10.2 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250μA VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) — |Yfs| VSD — — -2.2 33 50 — 1.2 V Static Drain-Source On-Resistance — 26 36 5.2 0.75 VDS = VGS, ID = 250μA VGS = -10V, ID = -4.4A VGS = -4.5V, ID = -3.7A VDS = -15V, ID = -4.4A VGS = 0V, IS = -3.9A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — — 1382 103 81 7.7 11.2 23.2 3.3 3.9 18.4 28.2 38.8 28.6 15.4 5.4 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = -20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -4.9A VDS = -20V, ID = -3.9A VGS = 4.5V, RG = 1Ω IF = -3.9A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect 8. Guaranteed by design. Not subject to production testing DMP4047LFDE Datasheet number: DS35777 Rev. 5 - 2 2 of 6 www.diodes.com July 2012 © Diodes Incorporated DMP4047LFDE 30 30 VGS = -10V VGS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20 VGS = -4.0V VGS = -3.5V 15 10 VDS = -5.0V 25 VGS = -4.5V VGS = -3.0V 20 15 10 T A = 150 °C 5 5 TA = 125°C VGS = -2.5V VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0.15 0.12 0.09 VGS = -2.5V 0.06 VGS = -4.5V 0.03 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 VGS = -10V 0 0 1 2 3 4 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 5 20 15 10 5 ID = -4.4A ID = -3.7A 0 0 0.02 0.04 0.06 0.08 0.10 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 0.10 VGS = -10V ID = -10A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -4.5V 0.08 TA = 150°C 0.06 TA = 125°C T A = 85°C 0.04 TA = 25°C TA = -55°C 0.02 0 TA = 85°C TA = 25°C T A = -55°C -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION 25 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Temperature DMP4047LFDE Datasheet number: DS35777 Rev. 5 - 2 30 3 of 6 www.diodes.com 1.4 VGS = -4.5V ID = -5A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature July 2012 © Diodes Incorporated 2.0 -VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.08 0.06 VGS = -4.5V ID = -5A 0.04 VGS = -10V ID = -10A 0.02 1.8 -ID = 1mA 1.6 1.4 -ID = 250µA 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 10,000 30 CT, JUNCTION CAPACITANCE (pF) f = 1MHz -IS, SOURCE CURRENT (A) 25 20 TA= 150°C 15 TA= 125°C 10 0 TA= 85°C T A= 25°C TA= -55° C 5 Coss 100 10 0 0.3 0.6 0.9 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current Ciss 1,000 1.5 C rss 0 2 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 20 100 10 RDS(on) Limited 8 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION DMP4047LFDE VDS = -20V ID = -4.9A 6 4 2 0 10 1 DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms TJ(max) = 150°C PW = 1ms TA = 25°C PW = 100µs VGS = -10V Single Pulse DUT on 1 * MRP Board 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP4047LFDE Datasheet number: DS35777 Rev. 5 - 2 25 0.01 0.1 4 of 6 www.diodes.com 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 July 2012 © Diodes Incorporated DMP4047LFDE D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 186°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 100 1,000 Package Outline Dimensions A1 A U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) Suggested Pad Layout Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X (6x) DMP4047LFDE Datasheet number: DS35777 Rev. 5 - 2 C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 5 of 6 www.diodes.com July 2012 © Diodes Incorporated DMP4047LFDE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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