JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 4.4Ω@10V 2A 600V TO-251S General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. 1. GATE 2. DRAIN 3. SOURCE 1 2 3 FEATURES z Robust High Voltage Termination z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Characterized for Use in Bridge Circuits z IDSS and VDS(on) Specified at Elevated Temperature MARKING CJD02N60 z XXX EQUIVALENT CIRCUIT CJD02N60 = Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Value Symbol Unit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 2 Pulsed Drain Current IDM 8 Single Pulsed Avalanche Energy* EAS 128 mJ Power Dissipation PD 1.25 W RθJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Thermal Resistance from Junction to Ambient V A ℃ *EAS condition: Tj=25℃,VDD=50V,L=64mH,IAS=2A,RG=25Ω, Starting TJ = 25°C www.cj-elec.com 1 F,May,2016 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA 600 V 25 VDS =600V, VGS =0V Zero gate voltage drain current IDSS VDS =480V, VGS =0V, 100 Tj=125℃ Gate-body leakage current IGSS VDS =0V, VGS =±20V Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-resistance RDS(on) VGS =10V, ID =1A gFS VDS =50V, ID =1A µA ±100 nA 3.5 4.0 V 3.6 4.4 Ω On characteristics (note1) Forward transconductance 2.0 1 S Dynamic characteristics (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS =25V,VGS =0V, f =1MHz 435 pF 56 9.2 Switching characteristics (note 2) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Turn-on rise time Turn-off delay time Turn-off fall time VDS=480V, VGS=10V, ID=2.4A 40 50 nC 4.2 8.4 12 tr VDD=300V,ID=2A, 21 td(off) VGS=10V,RG=18Ω 30 tf ns 24 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) Continuous drain-source diode forward current Pulsed drain-source diode forward current VSD VGS =0V, IS=2A 1.6 V IS 2 A ISM 8 A Notes: 1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. 2. Guaranteed by design, not subject to production. www.cj-elec.com 2 F,May,2016 Typical Characteristics Output Characteristics Transfer Characteristics 1.0 3.0 VDS=10V Pulsed Pulsed VGS= 6V、 8V、10V 2.5 (A) (A) VGS=5.5V DRAIN CURRENT ID DRAIN CURRENT Ta=25℃ ID 2.0 1.5 VGS=5V 1.0 Ta=100℃ 0.5 0.5 VGS=4.5V 0.0 0 6 12 18 DRAIN TO SOURCE VOLTAGE 24 VDS 0.0 30 0 (V) 1 2 3 4 5 GATE TO SOURCE VOLTAGE RDS(ON) —— ID VGS 6 RDS(ON) —— VGS 30 10 Pulsed ID=1A Ta=25℃ Pulsed 25 (Ω) VGS=10V 4 RDS(ON) 6 20 ON-RESISTANCE RDS(ON) (Ω) 8 ON-RESISTANCE 7 (V) 15 2 0 Ta=25℃ Ta=100℃ 10 5 1 0.1 2 DRAIN CURRENT 3 ID 4 0 5 2 (A) 4 6 8 10 GATE TO SOURCE VOLTAGE VGS 12 (V) Threshold Voltage IS —— VSD 5 4 Pulsed 4 ID=250uA VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.1 Ta=100℃ Ta=25℃ 0.01 1E-3 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE www.cj-elec.com 1.6 3 2 1 0 25 2.0 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 TJ 125 (℃ ) F,May,2016 TO-251S Package Outline Dimensions Symbol A A1 b c D D1 D2 E e L L1 L2 Φ h V www.cj-elec.com Dimensions In Millimeters Max. Min. 2.200 2.400 0.860 1.160 0.660 0.860 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 10.400 11.000 3.300 3.700 1.600 REF. 1.100 1.300 0.000 0.300 5.350 REF. 4 Dimensions In Inches Min. Max. 0.087 0.094 0.034 0.046 0.026 0.034 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.409 0.433 0.130 0.146 0.063 REF. 0.043 0.051 0.000 0.012 0.211 REF. F,May,2016