LKK 47-06C5 Advanced Technical Information Dual CoolMOS™ 1) Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS(on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions VDSS VD1D2 TVJ = 25°C TVJ = 25°C Maximum Ratings VGS 600 ±600 V V ±20 V 47 32 A A 1950 3 mJ mJ ID25 ID90 TC = 25°C TC = 90°C EAS EAR single pulse repetitive Symbol Conditions RDSon VGS = 10 V; ID = 44 A 40 45 mΩ RDSon total between D1 and D2 VG1S = VG2S = 10 V; ID = 44 A 80 mΩ VGSth VDS = VGS; ID = 3 mA IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C ID = 11 A; TC = 25°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3 3.5 V 10 µA µA 100 nA 50 IGSS VGS = ±20 V; VDS = 0 V Ciss Coss VGS = 0 V; VDS = 100 V f = 1 MHz Qg Qgs Qgd VGS= 0 to10 V; VDS = 400 V; ID = 44 A 150 35 50 td(on) tr td(off) tf VGS= 10 V; VDS = 400 V; ID = 44 A; RG = 3.3 Ω 30 20 100 10 ns ns ns ns RthJC RthCH with heatsink compound 0.25 0.45 K/W K/W IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 6800 320 • fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness • Enhanced total power density Applications • AC Switch - power regulation of AC heating - light dimming • Power factor correction (PFC) interleaved operation mode • Push pull converter 1) CoolMOS™ is a trademark of Infineon Technologies AG. pF pF 190 nC nC nC 20090209b 1-4 Advanced Technical Information LKK 47-06C5 Source-Drain Diode Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IS VGS = 0 V VSD IF = 44 A; VGS = 0 V t rr QRM IRM IF = 44 A; -di/dt = 100 A/µs; VR = 400 V 0.9 44 A 1.2 V 600 17 60 ns µC A Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz; t = 1 min FC Mounting force with clip Symbol Conditions CP coupling capacity between shorted pins and mounting tab in the case dS, dA dS, dA pin - pin pin - backside metal Weight -55...+150 -55...+150 °C °C 2500 V~ 40 - 180 N Characteristic Values min. typ. max. 50 tbd tbd pF mm mm 10 g 20090209b © 2009 IXYS All rights reserved 2-4 LKK 47-06C5 Advanced Technical Information ISOPLUS264 S U A E R1 D Q1 T R Q A2 6 1 3 4 5 L L1 2 b c b2 b1 b3 A1 e NOTE: 1.TAP 6 = ELECTRICALLY ISOLATED 2,500V FROM THEOTHERPINS. 2. ALL LEADSAREPb FREESOLDER DIPPE D. All curves for single MOSFET T1 or T2 only 250 TJ = 25°C VGS = 20 V 140 10 V 8 V 8V TJ = 150°C 7V 10 V 120 7V 200 6V VGS = 20 V 100 5.5 V 150 I D [A] I D [A] 80 6V 60 100 5V 5.5 V 40 4.5 V 5V 50 20 4.5 V 0 0 0 5 10 15 20 0 5 10 15 20 V DS [V] V DS [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20090209b © 2009 IXYS All rights reserved 3-4 LKK 47-06C5 Advanced Technical Information 0.16 320 0.12 ID = 44 A VGS = 10 V TJV = 150°C 5.5 V VDS = 5 V 6V 6.5 V 7V 0.12 VDS > 2·RDS(on) max · ID 25 °C 280 0.1 240 0.08 0.08 I D [A] R DS(on) [ ] R DS(on) [ ] 200 20 V 0.06 98 % 160 150 °C 120 typ TJ = 0.04 0.04 80 0.02 40 0 0 0 20 40 60 80 0 100 -60 -20 20 60 I D [A] 140 180 0 2 4 T j [°C] Fig. 3 Typ. drain-source on-state resistance 10 100 Fig. 4 Drain-source on-state resistance 3 6 8 10 V GS [V] Fig. 5 Typ. transfer characteristics 12 10 5 ID = 11 A pulsed VGS = 0 V f = 1 MHz 10 10 4 10 3 Ciss VDS = 50 V 2 1 20 V 8 150 °C, 98% 25 °C 40 0V I F [A] V GS [ V] TJ = 150 °C C [ p F] 10 6 25 °C, 98% 10 1 Coss 10 2 10 1 10 0 4 Crss 2 10 0 0 0 0.5 1 1.5 2 0 50 100 0 150 Fig. 6 Forward characteristic of reverse diode 100 200 Fig. 8 Typ. capacitances 700 10 ID = 11 A 150 V DS [V] Fig. 7 Typ. gate charge 2000 0 ID = 0.25 mA 1500 660 0.5 1000 -1 Z th J C [ K / W ] V BR(DSS) [ V] 10 E AS [ m J ] 50 Q gate [nC] V SD [V] 620 0.2 D = tp/T 0.1 0.05 10 -2 0.02 500 580 0.01 0 540 20 60 100 140 T j [°C] Fig. 9 Avalanche energy 180 10 -60 -20 20 60 100 140 T j [°C] 180 single pulse -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p [s] Fig. 10 Drain-source breakdown voltage 20090209b © 2009 IXYS All rights reserved 4-4