IRF7331TRPbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
20
V
(@VGS = 4.5V)
mΩ
RDS(on) max
45
(@VGS = 2.5V)
Qg (typical)
ID
(@TA = 25°C)
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
S1
30
13
nC
7.0
A
G2
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7331PbF-1
SO-8
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRF7331TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
20
7.0
5.5
28
2.0
1.3
16
± 12
-55 to + 150
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
1
www.irf.com © 2014 International Rectifier
Typ.
Max.
Units
–––
–––
42
62.5
°C/W
Submit Datasheet Feedback
October 16, 2014
IRF7331TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
20
–––
–––
–––
0.6
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ.
–––
0.013
–––
–––
–––
–––
–––
–––
–––
–––
13
3.7
2.1
7.6
22
110
50
1340
170
120
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250μA
––– V/°C Reference to 25°C, ID = 1mA
30
VGS = 4.5V, ID = 7.0A
mΩ
45
VGS = 2.5V, ID = 5.6A
1.2
V
VDS = VGS, ID = 250μA
–––
S
VDS = 10V, ID = 7.0A
1.0
VDS = 16V, VGS = 0V
µA
25
VDS = 16V, VGS = 0V, TJ = 70°C
100
VGS = 12V
nA
-100
VGS = -12V
20
ID = 7.0A
–––
nC
VDS = 10V
–––
VGS = 4.5V
–––
VDD = 10V
–––
ID = 1.0A
ns
–––
RG = 53Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
pF
VDS = 16V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
2.0
28
–––
–––
–––
–––
31
15
1.2
47
23
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.0A, VGS = 0V
TJ = 25°C, IF = 2.0A
di/dt = 100A/μs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
D
S
IRF7331TRPbF-1
1000
100
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
10
1.50V
1
0.1
0.1
20μs PULSE WIDTH
TJ = 25 °C
1
10
10
1.50V
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 15V
20μs PULSE WIDTH
3.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
100
Fig 2. Typical Output Characteristics
100
2.5
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.0
20μs PULSE WIDTH
TJ = 150 °C
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
1.5
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
BOTTOM 1.5V
TOP
TOP
www.irf.com © 2014 International Rectifier
ID = 7.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
Submit Datasheet Feedback
October 16, 2014
IRF7331TRPbF-1
2400
8
2000
C, Capacitance(pF)
Coss = Cds + Cgd
1600
Ciss
1200
800
400
Coss
ID = 7.0A
VDS = 10V
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6
4
2
Crss
0
1
10
0
100
0
4
VDS, Drain-to-Source Voltage (V)
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
0.2
8
QG , Total Gate Charge (nC)
www.irf.com © 2014 International Rectifier
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100μsec
1msec
1
10msec
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
Submit Datasheet Feedback
October 16, 2014
100
IRF7331TRPbF-1
8.0
RD
VDS
I D , Drain Current (A)
VGS
6.0
RG
D.U.T.
+
-V DD
VGS
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
10
0.05
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF7331TRPbF-1
0.04
0.03
ID = 7.0A
0.02
0.01
2.0
4.0
6.0
8.0
0.12
0.10
0.08
0.06
VGS = 2.5V
0.04
0.02
VGS = 4.5V
0.00
0
5
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
10
15
20
25
ID , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
50KΩ
12V
.2μF
.3μF
QGD
VG
D.U.T.
+
V
- DS
VGS
3mA
IG
Charge
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
6
www.irf.com © 2014 International Rectifier
Fig 14b. Gate Charge Test Circuit
Submit Datasheet Feedback
October 16, 2014
30
1.2
60
1.1
50
1.0
40
ID = 250μA
0.9
Power (W)
VGS(th) Gate threshold Voltage (V)
IRF7331TRPbF-1
0.8
30
20
0.7
10
0.6
0
0.5
-75
-50
-25
0
25
50
75
100
125
150
0.0001
0.0010
0.0100
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
7
www.irf.com © 2014 International Rectifier
0.1000
1.0000 10.0000 100.0000
Time (sec)
T J , Temperature ( °C )
Fig 16. Typical Power Vs. Time
Submit Datasheet Feedback
October 16, 2014
IRF7331TRPbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BASIC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMETERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
A1
y
0.10 [.004]
8X c
8X L
7
C A B
FOOT PRINT
NOT ES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O
A S UBS T RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOS FET )
INTERNATIONAL
RECT IFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY SIT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014
IRF7331TRPbF-1
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at:http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
10/16/2014
Comments
• Corrected part number from" IRF7331PbF-1" to "IRF7331TRPbF-1" -all pages
• Removed the "IRF7331PbF-1" bulk part number from ordering information on page1
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 16, 2014