SemiHow HCS60R750V Superior avalanche rugged technology Datasheet

BVDSS = 600 V
RDS(on) typ ȍ
HCS60R750V
ID = 7 A
600V N-Channel Super Junction MOSFET
TO-220F
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 14 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
600
V
Drain Current
– Continuous (TC = 25୅)
7*
A
Drain Current
– Continuous (TC = 100୅)
4.4*
A
IDM
Drain Current
– Pulsed
21*
A
VGS
Gate-Source Voltage
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
90
mJ
IAR
Avalanche Current
(Note 1)
4
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.5
mJ
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
32
W
0.26
W/୅
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
୅
ID
(Note 1)
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
3.9
RșJA
Junction-to-Ambient
--
60.5
Units
୅/W
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HCS60R750V
November 2014
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
gFS
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.5
--
3.5
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 4.4 A
--
0.67
0.75
Ÿ
Forward Transconductance
VDS = 10, ID = 4.4 A
--
5
--
S
VGS = 0 V, ID = 250 Ꮃ
600
--
--
V
VDS = 600 V, VGS = 0 V
--
--
10
Ꮃ
VDS = 480 V, TC = 125୅
--
--
100
Ꮃ
VGS = ρ20 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
710
920
Ꮔ
--
200
260
Ꮔ
--
3.5
4.6
Ꮔ
--
0.5
--
Ÿ
--
20
50
Ꭸ
--
25
60
Ꭸ
--
60
130
Ꭸ
--
25
60
Ꭸ
--
14
18.5
nC
--
4
--
nC
--
5
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 300 V, ID = 7 A,
RG = 25 Ÿ
VDS = 480 V, ID = 7 A
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
7
ISM
Pulsed Source-Drain Diode Forward Current
--
--
21
VSD
Source-Drain Diode Forward Voltage
IS = 7 A, VGS = 0 V
--
--
1.2
V
trr
Reverse Recovery Time
--
300
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 7 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
2.4
--
ȝ&
A
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=4A, VDD=50V, RG=25:, Starting TJ =25qC
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HCS60R750V
Electrical Characteristics TC=25 qC
HCS60R750V
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HCS60R750V
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 4.4 A
0.5
0.0
-100
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
7
Operation in This Area
is Limited by R DS(on)
10 Ps
ID, Drain Current [A]
100 ms
100
DC
10-1
* Notes :
1. TC = 25 oC
10-2
10-1
100
5
4
3
2
1
2. TJ = 150 oC
3. Single Pulse
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
6
100 Ps
1 ms
10 ms
101
100
0.2
* Notes :
1. ZTJC(t) = 3.9 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
-1
10
0.02
PDM
0.01
t1
single pulse
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
HCS60R750V
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
HCS60R750V
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͡͝ͿΠΧΖΞΓΖΣ͑ͣͥ͑͢͡
HCS60R750V
Package Dimension
{vTYYWmG
±0.20
±0.20
2.54±0.20
0.70±0.20
6.68±0.20
0
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
.20
0.80±0.20
0.50±0.20
2.54typ
2.54typ
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