ON NVD5C684NL Power mosfet Datasheet

NVD5C684NL
Power MOSFET
60 V, 16.5 mW, 38 A, Single N−Channel
Features
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
"20
V
ID
38
A
Power Dissipation RqJC
(Note 1)
Continuous Drain Current RqJA (Notes 1, 2 &
3)
Power Dissipation RqJA
(Notes 1 & 2)
Pulsed Drain Current
TC = 25°C
Steady
State
TC = 100°C
TC = 25°C
27
PD
TC = 100°C
TA = 25°C
Steady
State
TA = 100°C
TA = 25°C
TA = 100°C
TA = 25°C, tp = 10 ms
G
A
13
4
1 2
1.5
130
A
TJ, Tstg
−55 to
175
°C
IS
28
A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL(pk) = 2.0 A)
EAS
93
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
S
N−CHANNEL MOSFET
W
3.0
IDM
Operating Junction and Storage Temperature
D
9.0
PD
38 A
W
27
13
ID
ID
16.5 mW @ 10 V
24.3 mW @ 4.5 V
Symbol
Continuous Drain Current RqJC (Notes 1 & 3)
RDS(on)
V(BR)DSS
60 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
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Symbol
Value
Unit
Junction−to−Case (Drain) (Note 1)
RqJC
5.6
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
50
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
AYWW
5C
684LG
•
•
•
•
2
1 Drain 3
Gate Source
A
= Assembly Location
Y
= Year
WW
= Work Week
5C684L = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 0
1
Publication Order Number:
NVD5C684NL/D
NVD5C684NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
27
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
2.1
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.2
4.5
mV/°C
mW
VGS = 10 V, ID = 15 A
13.7
16.5
VGS = 4.5 V, ID = 15 A
19.4
24.3
VDS = 5.0 V, ID = 15 A
30
S
700
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Threshold Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
300
13
VDS = 48 V,
ID = 15 A
VGS = 4.5 V
4.6
VGS = 10 V
9.6
QG(TH)
nC
nC
1.2
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.9
V
td(on)
8.0
ns
VGS = 4.5 V, VDS = 48 V,
ID = 15 A
2.0
1.2
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDS = 48 V,
ID = 15 A, RG = 2.5 W
tf
43
25
40
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 15 A
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
20
Charge Time
ta
10
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 15 A
QRR
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2
V
ns
10
10
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD5C684NL
TYPICAL CHARACTERISTICS
80
80
VGS = 10 V to 5 V
50
40
3.6 V
30
3.4 V
20
3.2 V
3.0 V
2.8 V
2.6 V
10
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
60
0
0.5
1.0
1.5
2.0
60
50
40
30
TJ = 25°C
20
10
TJ = 125°C
2.5
0
3
4
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
40
35
30
25
20
15
10
5
0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
5
40
TJ = 25°C
35
30
25
VGS = 4.5 V
20
VGS = 10 V
15
10
5
0
5
10
15
25
20
30
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
10000
TJ = 150°C
VGS = 10 V
ID = 15 A
1000
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 15 A
1.6
1.4
1.2
1.0
TJ = 125°C
100
TJ = 85°C
10
1
TJ = 25°C
0.1
0.8
0.6
−50
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
45
1.8
TJ = −55°C
0
50
3
VDS = 5 V
70
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
70
0.01
−25
0
25
50
75
100
125
150
175
5
10
15
20
25
30
35
40
45
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
55
NVD5C684NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
COSS
100
CRSS
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
10
20
30
40
50
t, TIME (ns)
7
6
5
4
QGS
QGD
3
2
1
0
0
1
2
3
4
5
6
7
8
9
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
VGS = 0 V
td(on)
10
VGS = 4.5 V
VDS = 48 V
ID = 15 A
10
10
100
tf
tr
td(off)
1
10
1
TJ = 125°C
0.1
0.3
100
0.4
0.5
0.6
TJ = 25°C
0.7
0.8
TJ = −55°C
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
IPEAK, (A)
ID, DRAIN CURRENT (A)
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
VDS = 48 V
ID = 15 A
TJ = 25°C
9
60
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
CISS
10
10
1
0.1
0.1
VGS ≤ 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
1
TJ(initial) = 25°C
TJ(initial) = 100°C
1
10 ms
0.5 ms
1 ms
10 ms
10
100
0.1
0.00001
1000
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVD5C684NL
TYPICAL CHARACTERISTICS
10
R(t) (°C/W)
Duty Cycle = 50%
1 20%
10%
5%
2%
0.1 1%
Single Pulse
0.01
0.001
1E−06
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
NVD5C684NLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVD5C684NL
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
b2
e
c
SIDE VIEW
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVD5C684NL/D