DMS2095LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE Product Summary Features and Benefits • MOSFET with Low RDS(ON) – minimize conduction losses RDS(on) max ID • Low Gate Threshold Voltage, -1.3V Max 95mΩ @ VGS = -4.5V -3.4A • Schottky Diode with Low Forward Voltage Drop 120mΩ @ VGS = -2.5V -3.0A • Low Profile, 0.5mm Max Height 150mΩ @ VGS = -1.8V -2.7A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability MOSFET -20V SCHOTTKY DIODE VR VF max IO 400mV @ IF = 0.5A 20V Mechanical Data 1.0A 470mV @ IF = 1.0A • Case: U-DFN2020-6 Type B Description and Applications • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram performance, making it ideal for high efficiency power management • Terminals: Finish – NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 • Weight: 0.0065 grams (approximate) applications. • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Power management functions U-DFN2020-6 Type B D A S K S G D K G K D NC A Pin1 D1 SCHOTTKY DIODE Q1 P-MOSFET Bottom View Ordering Information (Note 4) Part Number DMS2095LFDB-7 DMS2095LFDB-13 Notes: Case U-DFN2020-6 Type B U-DFN2020-6 Type B Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MS2 Date Code Key Year Code Month Code 2011 Y Jan 1 YM NEW PRODUCT V(BR)DSS 2012 Z Feb 2 DMS2095LFDB Document number: DS35955 Rev. 3 - 2 Mar 3 MS2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D April 2014 © Diodes Incorporated DMS2095LFDB Maximum Ratings – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Drain-Source Voltage VDSS -20 V Gate-Source Voltage (Note 5) VGSS ±12 V Continuous Drain Current (Note 7) VGS = -4.5V Units Steady State TA = +25°C TA = +70°C ID -3.4 -2.7 A t<10s TA = +25°C TA = +70°C ID -3.9 -3.1 A IS -1 A IDM -10 A Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Ratings – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit VRRM VRWM VR 20 V Average Rectified Output Current (Note 7, t<10s) IO 1 A Peak Repetitive Forward Current (Note 7, t<10s) IFRM 2 A Non-Repetitive Peak Forward Surge Current (Note 7, t<10s) Single half sine-wave superimposed on rated load IFSM 20 A Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Notes: Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s PD RθJA PD RθJA Value 0.81 0.52 154 114 1.64 1.04 77 57 Units W °C/W W °C/W RθJC 27.5 °C/W TJ, TSTG -55 to +150 °C 5. AEC-Q101 VGS maximum is ±9.6V 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMS2095LFDB Document number: DS35955 Rev. 3 - 2 2 of 7 www.diodes.com April 2014 © Diodes Incorporated DMS2095LFDB Electrical Characteristics – P-CHANNEL MOSFET – Q1 NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS (@TA = +25°C, unless otherwise specified.) Typ Max -20 ⎯ ⎯ V VGS = 0V, ID = -250μA ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V IGSS ⎯ ⎯ ±800 nA VGS = ±12V, VDS = 0V VGS(th) -0.4 ⎯ -1.3 V Gate-Source Leakage Unit Test Condition ON CHARACTERISTICS (Note 8) Gate Threshold Voltage RDS (ON) ⎯ ⎯ ⎯ 48 65 90 95 120 150 mΩ VSD ⎯ -0.42 -1.2 V Input Capacitance Ciss ⎯ 561 ⎯ pF Output Capacitance Coss ⎯ 78 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 66 ⎯ pF Gate Resistance Rg ⎯ 59.5 ⎯ Ω Total Gate Charge Qg ⎯ 7.0 ⎯ nC Gate-Source Charge Qgs ⎯ 0.9 ⎯ nC Gate-Drain Charge Qgd ⎯ 1.7 ⎯ nC Turn-On Delay Time tD(on) ⎯ 5.3 ⎯ ns Turn-On Rise Time tr ⎯ 5.8 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 69 ⎯ ns Turn-Off Fall Time tf ⎯ 54 ⎯ ns Reverse Recovery Time trr ⎯ 12.4 ⎯ ns Reverse Recovery Charge Qrr ⎯ 3.7 ⎯ nC Static Drain-Source On-Resistance Diode Forward Voltage VDS = VGS, ID = -250μA VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 9) Electrical Characteristics – SCHOTTKY – D1 Characteristic Min Typ V(BR)R 20 Forward Voltage (Note 8) VF ⎯ ⎯ Reverse Current (Note 8) IR ⎯ Notes: VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDS = -10V, ID = -2.5A VDD = -10V, VGS = -4.5V, RL = 4Ω, RG = 6Ω IF = -2.5A, di/dt = 100A/μs (@TA = +25°C, unless otherwise specified.) Symbol Reverse Breakdown Voltage (Note 8) VDS = -10V, VGS = 0V f = 1.0MHz Max Unit Test Condition 35 ⎯ V IR = 1mA — — 0.40 0.47 V IF = 0.5A IF = 1.0A 30 80 μA VR = 20V 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing DMS2095LFDB Document number: DS35955 Rev. 3 - 2 3 of 7 www.diodes.com April 2014 © Diodes Incorporated DMS2095LFDB MOSFET Characteristics 10.0 10 VGS = -4.5V VGS = -2.0V VGS = -2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS = -3.0V VGS = -4.0V 6.0 VGS = -1.5V 4.0 VGS = -1.2V 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 4 3 0.2 0.18 0.16 0.14 0.12 VGS = -1.8V 0.1 VGS = -2.5V 0.08 0.06 VGS = -4.5V 0.04 0.02 1 2 3 4 5 6 7 8 9 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = -4.5V ID = -3A VGS = -2.5V ID = -1A 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMS2095LFDB Document number: DS35955 Rev. 3 - 2 TA = 150°C TA = 125°C 4 of 7 www.diodes.com TA = 85°C TA = 25°C T A = -55°C 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.1 VGS = -4.5V 0.09 0.08 TA = 125 °C TA = 150 °C 0.07 TA = 85°C 0.06 TA = 25°C 0.05 0.04 TA = -55°C 0.03 0.02 0.01 0 10 1.6 1.2 0 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 6 1 VGS = -1.0V 0 7 2 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8.0 VDS = -5.0V 9 0 1 2 3 4 5 6 7 8 9 ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.12 0.1 VGS = -2.5V ID = -1A 0.08 0.06 VGS = -4.5V ID = -3A 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMS2095LFDB MOSFET Characteristics (cont.) 10 VGS(TH), GATE THRESHOLD VOLTAGE (V) 9 0.8 IS, SOURCE CURRENT (A) 8 -ID = 1mA 0.6 -ID = 250µA 0.4 0.2 7 6 5 T A= 150 °C 4 TA= 125°C 3 TA= 85°C 2 T A= 25°C TA= -55° C 1 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 10000 9 VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) 1000 Ciss 100 Coss Crss 8 7 6 5 VDS = -10V ID = -2.5A 4 3 2 1 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 1 20 0 0 3 6 9 12 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 15 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 155°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 DMS2095LFDB Document number: DS35955 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 11 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 April 2014 © Diodes Incorporated DMS2095LFDB Schottky Characteristics IR, INSTANTANEOUS REVERSE CURRENT (µA) IF, INSTANTANEOUS FORWARD CURRENT (A) NEW PRODUCT 10 1 T A = 150°C TA = 125°C TA = 85°C 0.1 TA = 25°C TA = -55°C 0.01 100000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 12 Typical Forward Characteristics T A = 150°C 10000 TA = 125°C TA = 85°C 1000 TA = 25°C 100 TA = -55°C 10 1 0.1 0 2 4 6 8 10 12 14 16 18 20 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 13 Typical Reverse Characteristics Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 ⎯ ⎯ b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 ⎯ ⎯ D2 0.50 0.70 0.60 e 0.65 ⎯ ⎯ E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 ⎯ ⎯ L 0.25 0.35 0.30 z 0.225 ⎯ ⎯ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 G X2 G1 X1 G Z DMS2095LFDB Document number: DS35955 Rev. 3 - 2 Y1 6 of 7 www.diodes.com April 2014 © Diodes Incorporated DMS2095LFDB IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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