DMP25H18DLFDE 250V P-CHANNEL ENHANCEMENT MODE MOSFET RDS(ON) max ID max TA = +25°C 14Ω @ VGS = -10V -0.26A 18Ω @ VGS = -3.5V -0.23A V(BR)DSS -250V Features • • • • • • Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • • • • 0.6mm Profile – Ideal for Low-Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data • • • • General Purpose Interfacing Switch Load Switching Battery Management Application Power Management Functions • Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) D U-DFN2020-6 Pin1 G S Bottom View Pin Out Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMP25H18DLFDE-7 DMP25H18DLFDE-13 Notes: Marking H8 H8 Reel Size (inches) 7 13 Quantity per Reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 \ H8 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMP25H18DLFDE Datasheet number: DS37298 Rev. 3 - 2 Mar 3 H8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM ADVANCE INFORMATION ADVANCED INFORMATION Product Summary 2016 D Apr 4 2017 E May 5 Jun 6 1 of 7 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D January 2015 © Diodes Incorporated DMP25H18DLFDE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION ADVANCED INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Pulsed Drain Current (10µs pulse, duty cycle ≦1%) Symbol Value VDSS -250 V VGSS ±40 V ID -0.26 -0.21 A IDM -0.8 A IS 1.2 A TA = +25°C TA = +70°C Steady State Maximum Body Diode Continuous Current (Note 6) Units Thermal Characteristics Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Value 0.6 1.4 191 86 PD RθJA Operating and Storage Temperature Range RθJC 17 TJ, TSTG -55 to +150 Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -250 — — V Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA VDS = -250V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±40V, VDS = 0V VGS(th) -0.5 -1.7 -2.5 V VDS = VGS, ID = -1mA 10 14 13 18 -0.8 -1.2 VGS = 0V, ID = -1mA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS (ON) — VSD — Ω V VGS = -10V, ID = -200mA VGS = -3.5V, ID = -100mA VGS = 0V, IS = -200mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 81 — pF Output Capacitance Coss — 14 — pF Reverse Transfer Capacitance Crss — 4 — pF Gate Resistance Rg — 13 — Ω Total Gate Charge (VGS = -10V) Qg — 2.8 — nC Gate-Source Charge Qgs — 0.3 — nC Gate-Drain Charge Qgd — 0.6 — nC Turn-On Delay Time tD(on) — 7.5 — ns Turn-On Rise Time tr — 25 — ns Turn-Off Delay Time tD(off) — 124 — ns tf — 95 — ns Reverse Recovery Time trr — 85 — ns Reverse Recovery Charge Qrr — 294 — uC Turn-Off Fall Time Notes: VDS = -25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -25V, ID = -200mA VDS = -30V, ID = -200mA VGS = -10V, RG = 50Ω IF = -1.0A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP25H18DLFDE Datasheet number: DS37298 Rev. 3 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP25H18DLFDE 0.8 0.3 VGS = -20V VDS = -10V TA = 85°C VGS = -4.5V 0.5 0.4 VGS = -4.0V 0.3 VGS = -3.5V 0.2 VGS = -3.0V VGS = -2.5V 0.1 0.0 ID, DRAIN CURRENT (A) 0.6 0 1 2 3 4 5 6 7 8 9 VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 18 16 VGS = -4.5V VGS = -10V 12 VGS = -20V 10 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage DMP25H18DLFDE Datasheet number: DS37298 Rev. 3 - 2 TA = -55° C 0.1 0 10 20 14 TA = 25°C 0.2 TA = 150°C TA = 125°C VGS = -2.2V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ID, DRAIN CURRENT (A) VGS = -10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION ADVANCED INFORMATION 0.7 0.8 3 of 7 www.diodes.com 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 30 VGS = -4.5V T A = 150°C 25 TA = 125°C 20 T A = 85°C 15 TA = 25°C 10 T A = -55°C 5 0 0 0.1 0.2 0.3 0.4 0.5 ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 0.6 January 2015 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = -10V ID = -0.3A 2 1.6 VGS = -4.5V ID = -0.2A 1.2 0.8 0.4 -50 2 25 VGS = -4.5V ID = -0.2A 20 15 VGS = -10V ID = -0.3A 10 5 0 -50 1 0.9 1.8 0.8 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 30 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature -I D = 1mA 1.6 -ID = 250µA 1.4 1.2 0.7 0.6 0.5 TA= 150°C 0.4 TA= 125°C 0.3 T A= 85°C 0.2 TA= 25°C T A= -55°C 0.1 1 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 1000 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 f = 1MHz VGS, GATE-SOURCE VOLTAGE (V) 9 CT, JUNCTION CAPACITANCE (pF) ADVANCE INFORMATION ADVANCED INFORMATION 2.4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP25H18DLFDE Ciss 100 Coss 10 Crss 8 7 VDS = -25V ID = -200mA 6 5 4 3 2 1 1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance DMP25H18DLFDE Datasheet number: DS37298 Rev. 3 - 2 40 4 of 7 www.diodes.com 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 3 January 2015 © Diodes Incorporated DMP25H18DLFDE 10 ID, DRAIN CURRENT (A) 1 0.1 DC PW = 10s PW = 1s PW = 100ms 0.01 T J(max) = 150°C 0.001 PW = 10ms TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board PW = 1ms PW = 100µs VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area 1 D = 0.9 D = 0.7 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION RDS(on) Limited D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 192°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.0001 DMP25H18DLFDE Datasheet number: DS37298 Rev. 3 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIMES (sec) Figure 12 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 January 2015 © Diodes Incorporated DMP25H18DLFDE Package Outline Dimensions ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A U-DFN2020-6 Type E Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 — — 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 E 1.95 2.05 2.00 E2 1.40 1.60 1.50 e — — 0.65 L 0.25 0.35 0.30 L1 0.82 0.92 0.87 K1 — — 0.305 K2 — — 0.225 Z — — 0.20 All Dimensions in mm A3 D b1 K1 D2 E E2 L1 L(2X) K2 Z(4X) e b(6X) Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. U-DFN2020-6 Type E Dimensions Y3 Y2 X2 C X X1 X2 Y Y1 Y2 Y3 Y1 X1 X (6x) DMP25H18DLFDE Datasheet number: DS37298 Rev. 3 - 2 C Value (in mm) 0.650 0.400 0.285 1.050 0.500 0.920 1.600 2.300 Y (2x) 6 of 7 www.diodes.com January 2015 © Diodes Incorporated DMP25H18DLFDE ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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