MSN0880M 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =80A RDS(ON) <8mΩ @ VGS=10V（Typ：6.5mΩ） ● Special process technology for high ESD capability Lead Free ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin assignment PIN Configuration TO-263-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSN0880M MSN0880M TO-263-2L - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ±25 V ID 80 A ID (100℃) 60 A Pulsed Drain Current IDM 320 A Maximum Power Dissipation PD 170 W Peak diode recovery voltage dv/dt 15 V/ns 1.13 W/℃ EAS 580 mJ TJ,TSTG -55 To 175 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSN0880M Thermal Characteristic Thermal Resistance,Junction-to- Case (Note 2) ℃/W 0.88 RθJc Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 75 84 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 2.85 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A - 6.5 8 mΩ gFS VDS=5V,ID=30A - 60 - S Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss 4400 PF Output Capacitance Coss 340 PF Crss 260 PF Turn-on Delay Time td(on) 17.8 nS Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω 11.8 nS td(off) VGS=10V,RG=2.5Ω 56 nS 14.6 nS 100 nC 20 nC 30 nC Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=30A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) VGS=0V,IS=40A VSD IS - - 1.2 V - - 80 A trr Tj=25℃,ISD=40A,VGS=0V 36 nS Reverse Recovery Charge Qrr Tj=25℃,IF=75A,di/dt=100A/μs 56 nC Forward Turn-On Time ton Reverse Recovery Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH, ID=62A MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN0880M Test circuit 1）EAS test Circuits 2）Gate charge test Circuit 3）Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN0880M Typical Electrical and Thermal Characteristics (curves) Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance MORE Semiconductor Company Limited Figure6. RDS(ON) vs Junction Temperature http://www.moresemi.com 4/6 MSN0880M Figure7. BVDSS vs Junction Temperature Figure9. Gate charge waveforms Figure8. VGS(th) vs Junction Temperature Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSN0880M TO-263-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF MORE Semiconductor Company Limited 0.220 REF http://www.moresemi.com 6/6