CT Micro CTH214XAVT1 Ac input 4-pin half pitch mini-flat phototransistor optocoupler Datasheet

CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Features
•
High isolation 5000 VRMS
•
CTR flexibility available see order information
•
DC input with transistor output
•
Operating Temperature range - 55 °C to 110 °C
•
Regulatory Approvals
•
Description
The CTH214 series consists of a phototransistor
optically coupled to two gallium arsenide
Infrared-emitting diode, connected in inverse parallel
in a 4-lead half pitch Mini-Flat package.
UL - UL1577 (E364000)
Applications
VDE - EN60747-5-5(VDE0884-5)
•
Switch mode power supplies
CQC – GB4943.1, GB8898
•
Computer peripheral interface
IEC60065, IEC60950
•
Microprocessor system interface
Green Package
Package Outline
CT Micro
Proprietary & Confidential
Schematic
Page 1
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
Ratings
Units
VISO
Isolation voltage
3750
VRMS
PTOT
Total power dissipation
200
mW
TOPR
Operating temperature
-55 ~ +110
oC
TSTG
Storage temperature
-55 ~ +150
oC
TSOL
Soldering temperature
260
oC
Forward current
±50
mA
1
A
Emitter power dissipation
70
mW
Detector power dissipation
150
mW
BVCEO
Collector-Emitter Breakdown Voltage
80
V
BVECO
Emitter-Collector Breakdown Voltage
6
V
Collector Current
50
mA
Notes
Emitter
IF
IF(TRANS)
PD
Peak transient current
(≤1µs P.W,300pps)
Detector
PD
IC
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Electrical Characteristics T
A
= 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
VF
Forward voltage
CIN
Input Capacitance
Test Conditions
Min
IF=±10mA
Typ
Max
Units
1.24
1.4
V
f= 1MHz
-
30
-
pF
Test Conditions
Min
Typ
Max
Units
Notes
Detector Characteristics
Symbol
Parameters
BVCEO
Collector-Emitter Breakdown
IC= 100µA
80
-
-
V
BVECO
Emitter-Collector Breakdown
IE= 100µA
6
-
-
V
Collector-Emitter Dark Current
VCE= 20V, IF=0mA
-
-
100
nA
Min
Typ
Max
Units
20
-
300
50
-
150
0.7
-
1.3
-
0.04
0.2
V
5x1010
-
-
Ω
-
0.5
1
pF
Min
Typ
Max
Units
-
6
-
-
8
-
ICEO
Notes
Transfer Characteristics
Symbol
Parameters
Current Transfer
CTR
Test Conditions
CTH214
IF= ±1mA, VCE= 5V
Ratio
CTH214A
CTR Symmetry
Collector-Emitter Saturation
VCE(SAT)
Voltage
IF= ±1mA, VCE= 5V
IF= ±20mA, IC= 1mA
RIO
Isolation Resistance
VIO= 500VDC
CIO
Isolation Capacitance
f= 1MHz
Notes
%
Switching Characteristics
Symbol
Parameters
tr
Rise Time
tf
Fall Time
Test Conditions
IC= 2mA, VCE= 2V, RL= 100Ω
CT Micro
Proprietary & Confidential
Page 3
Notes
µs
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
CT Micro
Proprietary & Confidential
Page 5
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Package Dimension Dimensions in mm unless otherwise stated
Recommended Solder Mask Dimensions in mm unless otherwise stated
CT Micro
Proprietary & Confidential
Page 6
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Marking Information
214RV
CT
YWWK
Note:
CT
214
: Denotes “CT Micro”
: Product Number
R
V
Y
: CTR Rank
: VDE Option
: Fiscal Year
WW
K
: Work Week
: Manufacturing Code
Ordering Information
CTH214X(V)(Z)
X = Part No. (X=A or none)
V = VDE Option (V or none)
Z = Tape and reel option (T1 or T2)
Option
Description
Quantity
T1
Surface Mount Lead Forming – With Option 1 Taping
5000 Units/Reel
T2
Surface Mount Lead Forming – With Option 2 Taping
5000 Units/Reel
CT Micro
Proprietary & Confidential
Page 7
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Carrier Tape Specifications Dimensions in mm unless otherwise stated
Option T1
Option T2
CT Micro
Proprietary & Confidential
Page 8
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
Temperature Min. (Tsmin)
150°C
Temperature Max. (Tsmax)
200°C
Time (ts) from (Tsmin to Tsmax)
60-120 seconds
Ramp-up Rate (tL to tP)
3°C/second max.
Liquidous Temperature (TL)
217°C
Time (tL) Maintained Above (TL)
60 – 150 seconds
Peak Body Package Temperature
260°C +0°C / -5°C
Time (tP) within 5°C of 260°C
30 seconds
Ramp-down Rate (TP to TL)
6°C/second max
Time 25°C to Peak Temperature
8 minutes max.
CT Micro
Proprietary & Confidential
Page 9
Rev 1
Jun, 2015
CTH214 Series
AC Input 4-Pin Half Pitch Mini-Flat
Phototransistor Optocoupler
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
DISCOLORATION MIGHT OCCUR ON THE PACKAGE SURFACE AFTER SOLDERING, REFLOW OR LONG
TERM USE. THIS DOES NOT IMPACT THE PRODUCT PERFORMANCE NOR THE PRODUCT RELIABILITY.
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical
support device or system whose failure to perform
implant into the body, or (b) support or sustain life,
can be reasonably expected to cause the failure of
or (c) whose failure to perform when properly used
the life support device or system, or to affect its
in accordance with instruction for use provided in
safety or effectiveness.
the labelling, can be reasonably expected to result
in significant injury to the user.
CT Micro
Proprietary & Confidential
Page 10
Rev 1
Jun, 2015
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