VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance DO-204AL • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY • Designed and qualified for commercial level Package DO-204AL (DO-41) IF(AV) 1A VR 100 V VF at IF 0.68 V IRM max. 1.0 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 1.0 mJ • Halogen-free according to IEC 61249-2-21 definition (-M3 only) DESCRIPTION The VS-MBR1100... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL IF(AV) Rectangular waveform VRRM VALUES UNITS 1.0 A 100 V IFSM tp = 5 μs sine 200 A VF 1 Apk, TJ = 125 °C 0.68 V TJ Range - 40 to 150 °C VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage VS-MBR1100 VS-MBR1100-M3 UNITS 100 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by, TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current Revision: 21-Sep-11 50 % duty cycle at TC = 85 °C, rectangular waveform 10 5 µs sine or 3 µs rect. pulse 200 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 50 Document Number: 93438 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 2A 1A TJ = 125 °C 2A Maximum reverse leakage current See fig. 2 Typical junction capacitance Typical series inductance Maximum voltage rate of change IRM (1) TJ = 25 °C VR = Rated VR TJ = 125 °C CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C LS Measured lead to lead 5 mm from package body dV/dt Rated VR VALUES UNITS 0.85 0.96 V 0.68 0.78 0.5 mA 1.0 35 pF 8.0 nH 10 000 V/µs VALUES UNITS - 40 to 150 °C 80 °C/W 0.33 g Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to lead RthJL (2) TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device 0.012 Case style DO-204AL (DO-41) (JEDEC) oz. MBR1100 Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB, thermal probe connected to lead 2 mm from package Revision: 21-Sep-11 Document Number: 93438 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 160 140 120 80 60 20 see note (1) 0 0 0.4 0.8 1.2 0 1.6 VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 93438_01 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) 93438_04 Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current 1 10 1 TJ = 150 °C Average Power Loss (W) IR - Reverse Current (mA) Square wave (D = 0.50) 80 % Rated VR applied 40 0.1 0.1 TJ = 125 °C 0.01 0.001 TJ = 25 °C 0.0001 0.8 0.6 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC DC RMS Limit 0.4 0.2 0 0 0 20 40 60 80 100 VR - Reverse Voltage (V) 93438_02 0 10 40 60 80 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 100 IFSM - Non-Repetitive Surge Current (A) CT - Junction Capacitance (pF) TJ = 25 °C 20 1 1.5 Fig. 5 - Forward Power Loss Characteristics 100 0 0.5 Average Forward Current - IF(AV) (A) 93438_05 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 93438_03 DC 100 1000 100 At Any Rated Load Condition And With rated VRRM Applied Following Surge 10 10 93438_06 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 6 - Maximum Non-Repetitive Surge Current Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 21-Sep-11 Document Number: 93438 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MBR1100, VS-MBR1100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- MBR 1 2 1 100 TR -M3 3 4 5 6 1 - Vishay Semiconductors product 2 - Schottky MBR series 3 - Current rating: 1 = 1 A 4 - Voltage rating: 100 = 100 V 5 - TR = Tape and reel package None = Bulk package 6 - Environmental digit None = Lead (Pb)-free and RoHS compliant -M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY VS-MBR1100 1000 1000 PACKAGING DESCRIPTION Bulk VS-MBR1100TR 5000 5000 Tape and reel VS-MBR1100-M3 1000 1000 Bulk VS-MBR1100TR-M3 5000 5000 Tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95241 Part marking information www.vishay.com/doc?95304 Packaging information www.vishay.com/doc?95338 Revision: 21-Sep-11 Document Number: 93438 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Axial DO-204AL (DO-41) DIMENSIONS in millimeters (inches) 2.70 (0.106) DIA. 2.29 (0.090) Cathode band 27.0 (1.06) MIN. (2 places) 5.21 (0.205) MAX. 27.0 (1.06) MIN. (2 places) 1.27 (0.050) MAX. Flash (2 places) 5.21 (0.205) MAX. 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 0.86 (0.034) DIA. 0.72 (0.028) (2 places) 2.70 (0.106) DIA. 2.29 (0.090) Revision: 29-Aug-11 Document Number: 95241 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000