Siemens C67040-A4207-A2 Igbt (high switching speed very low switching losses low tail current latch-up free avalanche rated) Datasheet

BUP 314S
Preliminary data
IGBT
• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated
Pin 2
Pin 1
G
Type
VCE
IC
BUP 314S
1200V 25A
Pin 3
C
E
Package
Ordering Code
TO-218 AB
C67040-A4207-A2
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
Unit
1200
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
25
TC = 90 °C
17
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
50
TC = 90 °C
34
EAS
Avalanche energy, single pulse
mJ
IC = 25 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
65
Ptot
Power dissipation
TC = 25 °C
W
300
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Semiconductor Group
1
°C
Feb-07-1997
BUP 314S
Preliminary data
Maximum Ratings
Parameter
Symbol
DIN humidity category, DIN 40 040
-
IEC climatic category, DIN IEC 68-1
-
Values
E
Unit
-
55 / 150 / 56
Thermal Resistance
≤ 0.42
RthJC
Thermal resistance, chip case
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Collector-emitter breakdown voltage
V(BR)CES
VGE = 0 V, IC = 0.3 mA, Tj = 25 °C
V
1200
-
-
4.5
5.5
6.5
VGE = 15 V, IC = 15 A, Tj = 25 °C
-
5.5
7.6
VGE = 15 V, IC = 15 A, Tj = 125 °C
-
4.6
-
VGE = 15 V, IC = 30 A, Tj = 25 °C
-
8
-
VGE = 15 V, IC = 30 A, Tj = 125 °C
-
6.6
-
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 0.35 mA, Tj = 25 °C
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
Gate-emitter leakage current
-
-
0.8
IGES
VGE = 25 V, VCE = 0 V
Semiconductor Group
mA
nA
-
2
-
100
Feb-07-1997
BUP 314S
Preliminary data
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 15 A
Input capacitance
8.5
pF
-
1950
2600
-
180
270
-
120
180
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
12
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 47 Ω
Rise time
-
65
100
-
60
90
-
420
560
-
70
95
tr
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 47 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 47 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 47 Ω
Semiconductor Group
3
Feb-07-1997
BUP 314S
Preliminary data
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
26
320
A
W
Ptot
22
IC
240
20
18
200
16
14
160
12
10
120
8
80
6
4
40
2
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
°C
TC
160
TC
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 2
IGBT
10 0
tp = 18.0µs
A
K/W
IC
ZthJC
100 µs
10 1
10 -1
1 ms
D = 0.50
0.20
10 ms
10 0
10 -2
0.10
0.05
0.02
0.01
DC
10 -1
0
10
10
1
10
2
10
single pulse
3
10 -3
-5
10
V
VCE
Semiconductor Group
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Feb-07-1997
BUP 314S
Preliminary data
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
55
55
A
IC
45
40
A
17V
15V
13V
11V
9V
7V
IC
45
40
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
2
4
6
V
10
VCE
0
0
17V
15V
13V
11V
9V
7V
2
4
6
V
10
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp=80µs,VCE=20 V
60
A
50
IC
45
40
35
30
25
20
15
10
5
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Feb-07-1997
BUP 314S
Preliminary data
Typ. switching time
Typ. switching time
t = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
par.: VCE = 600 V, VGE = ± 15 V, RG = 47Ω
10 4
10 3
ns
t
tdoff
t
ns
10 2
10 3
tdoff
10 2
tdon
tr
tf
tr
tdon
tf
10 1
0
5
10
15
20
25
30
A
IC
10 1
0
40
20
40
60
80 100 120 140 160
Ω
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
par.: VCE = 600 V, VGE = ± 15 V, RG = 48.9Ω
8.0
8.0
mWs
mWs
E
200
RG
E
6.0
6.0
Eon
5.0
5.0
4.0
4.0
3.0
3.0
2.0
Eon
2.0
Eoff
Eoff
1.0
1.0
0.0
0.0
0
5
10
Semiconductor Group
15
20
25
30
A
IC
40
0
20
40
60
80 100 120 140 160
Ω
200
RG
6
Feb-07-1997
BUP 314S
Preliminary data
Typ. capacitances
Reverse biased safe operating area
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
ICpuls = f (VCE) , Tj = 150°C
parameter: VGE = 15 V
10 4
2.5
pF
ICpuls/IC
C
Ciss
10 3
1.5
1.0
Coss
Crss
10 2
0.5
0.0
10 1
0
0
5
10
15
20
25
30
V
40
VCE
200
400
600
800
1000 1200
V
1600
VCE
Short circuit safe operating area
ICsc = f (VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
10
ICsc/IC(90°C)
6
4
2
0
0
200
400
Semiconductor Group
600
800
1000 1200
V
1600
VCE
7
Feb-07-1997
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