Spec. No. : C262C3 Issued Date : 2012.08.08 Revised Date : Page No. : 1/6 CYStech Electronics Corp. PNP Digital Transistors (Built-in Resistors) DTA123YC3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTC123YC3 • Pb-free & Halogen-free package. Equivalent Circuit DTA123YC3 Outline SOT-523 R1=2.2kΩ , R2=10 kΩ IN(B) : Base OUT(C) : Collector GND(E) : Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Input Voltage Output Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range DTA123YC3 Symbol VCC VIN IO IO(Max) Pd RθJA Tj ; Tstg Limits -50 -12~+5 -100 -100 150 833 -55~+150 Unit V V mA mA mW °C/W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C262C3 Issued Date : 2012.08.08 Revised Date : Page No. : 2/6 Electrical Characteristics (Ta=25°C) Parameter Input Voltage Output Voltage Input Current Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. -3 33 1.54 3.6 - Typ. -0.1 2.2 4.5 250 Max. -0.3 -0.3 -3.8 -0.5 2.86 5.5 - Unit V V V mA μA kΩ MHz Test Conditions VCC=-5V, IO=-100μA VO=-0.3V, IO=-20mA IO/II=-10mA/-0.5mA VI=-5V VCC=-50V, VI=0V VO=-5V, IO=-10mA VCE=-10V, IC=-5mA, f=100MHz* * Transition frequency of the device Ordering Information Device DTA123YC3 DTA123YC3 Package SOT-523 (Pb-free and Halogen –free package) Shipping Marking 3000 pcs / Tape & Reel 52 CYStek Product Specification Spec. No. : C262C3 Issued Date : 2012.08.08 Revised Date : Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics DC Current Gain vs Output Current Output Voltage vs Output Current 1000 1000 Output Voltage---Vo(on)(mV) Current Gain---HFE Vo=5V 100 10 1 Io / Ii = 20 100 10 0.1 1 10 100 1 100 Output Current ---Io(mA) Output Current---Io(mA) Input Voltage vs Output Current (ON Characteristics) Output Current vs Input Voltage (OFF Characteristics) 10 10 Vo=0.3V Vcc=5V Output Current --- Io(mA) Input Voltage --- Vi(on)(V) 10 1 0.1 1 0.1 0.01 0.1 1 10 100 Output Current --- Io(mA) 0 0.5 1 1.5 Input Voltage --- Vi(off)(V) 2 Power Derating Curve Power Dissipation---PD(mW) 160 140 120 100 80 60 40 20 0 0 DTA123YC3 50 100 150 Ambient Temperature---TA(°C) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C262C3 Issued Date : 2012.08.08 Revised Date : Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTA123YC3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C262C3 Issued Date : 2012.08.08 Revised Date : Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTA123YC3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C262C3 Issued Date : 2012.08.08 Revised Date : Page No. : 6/6 SOT-523 Dimension Marking: 52 3-Lead SOT-523 Plastic Surface Mounted Package CYStek Package Code: C3 Style: Pin 1.Base (Input) 2.Emitter (Ground) 3.Collector (Output) *: Typical Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 DIM A A1 A2 b1 b2 c D Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 DIM E E1 e e1 L L1 θ Inches Min. Max. 0.028 0.035 0.057 0.069 0.020* 0.035 0.043 0.016 REF 0.010 0.018 0° 8° Millimeters Min. Max. 0.700 0.900 1.450 1.750 0.500* 0.900 1.100 0.400 REF 0.260 0.460 0° 8° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTA123YC3 CYStek Product Specification