ON NTMFS5C682NLT1G Power mosfet Datasheet

NTMFS5C682NL
Power MOSFET
60 V, 21 mW, 25 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Symbol
Value
Unit
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
25
A
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
ID
W
28
PD
S (1,2,3)
W
3.5
1.7
130
A
TJ, Tstg
−55 to
+ 175
°C
IS
31
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 1.1 A)
EAS
43
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
Source Current (Body Diode)
G (4)
N−CHANNEL MOSFET
IDM
Operating Junction and Storage Temperature
D (5)
A
8.8
6.2
TA = 100°C
TA = 25°C, tp = 10 ms
25 A
31.5 mW @ 4.5 V
14
TA = 100°C
TA = 25°C
ID MAX
18
TC = 100°C
TA = 25°C
RDS(ON) MAX
60 V
Drain−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
V(BR)DSS
21 mW @ 10 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
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°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING
DIAGRAM
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5C682L
A
Y
W
ZZ
S
S
S
G
D
5C682L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case − Steady State
Junction−to−Ambient − Steady State (Note 2)
Symbol
Value
Unit
RqJC
5.3
°C/W
RqJA
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
43
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
April, 2017 − Rev. 0
1
Publication Order Number:
NTMFS5C682NL/D
NTMFS5C682NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
28
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 16 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−4.5
VGS = 10 V
ID = 10 A
18
21
VGS = 4.5 V
ID = 10 A
26
31.5
gFS
VDS =15 V, ID = 10 A
V
mV/°C
17
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
410
VGS = 0 V, f = 1 MHz, VDS = 25 V
210
pF
7.0
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 48 V; ID = 10 A
2.5
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 48 V; ID = 10 A
5.0
nC
Threshold Gate Charge
QG(TH)
0.6
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.0
Plateau Voltage
VGP
2.7
td(ON)
4.0
VGS = 10 V, VDS = 48 V; ID = 10 A
nC
0.5
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 48 V,
ID = 10 A, RG = 2.5 W
tf
12
ns
12
1.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.9
TJ = 125°C
0.8
tRR
ta
tb
1.2
V
18
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 10 A
QRR
9.0
ns
9.0
7.0
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C682NL
TYPICAL CHARACTERISTICS
25
10 V to
4.5 V
3.4 V
VDS = 3 V
3.2 V
20
3.0 V
15
2.8 V
10
2.6 V
5
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
2.4 V
15
10
TJ = 25°C
5
VGS = 2.2 V
TJ = −55°C
0
0.5
1.0
1.5
2.0
2.5
0
0.5
1.0
1.5
2.0
2.5
3.5
3.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
50
TJ = 25°C
ID = 10 A
45
30
25
20
15
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.0
50
45
TJ = 25°C
40
35
VGS = 4.5 V
30
25
VGS = 10 V
20
15
10
10
15
20
25
30
35
40
45
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
100,000
TJ = 175°C
VGS = 10 V
ID = 10 A
10,000
2.0
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = 125°C
0
1.5
1.0
TJ = 150°C
1000
TJ = 125°C
100
TJ = 85°C
10
0.5
−50 −25
1
0
25
50
75
100
125
150
175
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTMFS5C682NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
C, CAPACITANCE (pF)
CISS
COSS
100
10
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
10
20
30
40
50
8
7
6
5
4
QGS
QGD
3
VDS = 48 V
TJ = 25°C
ID = 10 A
2
1
0
0
1
2
3
5
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
10
VGS = 0 V
IS, SOURCE CURRENT (A)
tf
td(off)
tr
t, TIME (ns)
QT
9
60
100
10
td(on)
1
VGS = 10 V
VDS = 48 V
ID = 10 A
0.1
1
10
1
TJ = 125°C
0.1
100
0.3
0.4
TJ = 25°C
0.5
0.6
TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10
TC = 25°C
Single Pulse
VGS ≤ 10 V
100
IPEAK, DRAIN CURRENT(A)
1000
ID, DRAIN CURRENT(A)
10
1 ms
500 ms
10 ms
10
1
RDS(on) Limit
Thermal Limit
Package Limit
dc
0.1
0.1
1
10
TJ(initial) = 25°C
TJ(initial) = 100°C
1
0.1
100
1E−05
1E−04
1E−03
1E−02
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TAV, TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NTMFS5C682NL
RqJA(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE(°C/W)
100
50% Duty Cycle
10
1
0.1
20%
10%
5%
2%
1%
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C682NLT1G
5C682L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C682NLT3G
5C682L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C682NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
0.10 C
SIDE VIEW
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.10
b
C A B
0.05
c
0.495
8X
4.560
2X
1.530
e/2
e
L
1
4
3.200
K
4.530
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
G
0.965
D2
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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Sales Representative
NTMFS5C682NL/D