Preliminary Datasheet BCR08DS-14A R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 700V-0.8A-Triac Low Power Use Features • • • • • Planar Passivation Type • Surface Mounted Type • Completed Pb Free IT (RMS) : 0.8 A VDRM :700 V IFGTI, IRGTI, IRGTIII : 5 mA or 10mA IVmode trigger is available (#B12) Outline RENESAS Package code: PRSP0004ZA-A (Package name: SOT-223) 2, 4 4 1. 2. 3. 4. 3 2 3 1 T1 Terminal T2 Terminal Gate Terminal T2 Terminal 1 Applications Washing machine, electric fan, air cleaner, other general purpose control applications Maximum Ratings Parameter Voltage class 14 700 840 Symbol Repetitive peak off-state voltageNote1 Non- repetitive peak off-state voltageNote1 Notes: 1. Gate open. VDRM VDSM Parameter RMS on-state current Symbol IT (RMS) Ratings 0.8 Unit A Surge on-state current ITSM 8 A I2t 0.26 A2 s PGM PG (AV) VGM IGM Tj Tstg — 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.12 W W V A °C °C g I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 Unit V V Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc= 96°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Page 1 of 6 BCR08DS-14A Preliminary Electrical Characteristics Parameter Symbol IDRM Repetitive peak off-state current On-state voltage Gate trigger Note2 voltage VTM BCR08DS-14A#B10 Min. Typ. Max. — — 1.0 — — 2.0 BCR08DS-14A#B12 Min. Typ. Max. — — 1.0 — — 2.0 Unit mA Test conditions Tj = 125°C VDRM applied V Tc = 25°C, ITM =1.2 A instantaneous measurement Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω Ι VFGTΙ — — 2.0 — — 2.0 V ΙΙ ΙΙΙ IV VRGTΙ VRGTΙΙΙ VFGTΙΙΙ — — — — — — 2.0 2.0 — — — — — — — 2.0 2.0 2.0 V V V Ι IFGTΙ — — 5 — — 10 mA ΙΙ ΙΙΙ IV IRGTΙ IRGTΙΙΙ IFGTΙΙΙ — — — — — — 5 5 — — — — — — — 10 10 10 mA mA mA VGD 0.2 — — 0.2 — — Rth (j-c) — — 25 — — 25 Critical-rate of rise of offstate commutating voltage Note4 (dv/dt)c 0.5 — — 0.5 — — Tj = 125°C VD = 1/2 VDRM Note3 °C/W Junction to case V/μs Tj = 125°C Critical-rate of rise of offNote5 state voltage dv/dt 200 — — 200 — — V/μs Gate trigger Note2 current Gate non-trigger voltage Thermal resistance Tj = 25°C, VD = 6 V RL = 6 Ω, RG = 330 Ω V Tj = 125°C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below. Commutating voltage and current waveforms (inductive Test conditions load) 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.4 A/ms 3. Peak off-state voltage VD = 400 V Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD 5. Test conditions of the critical-rate of rise of off-state voltage are shown in the table below. Test conditions Off-state voltage waveforms 1. Junction temperature Tj = 125°C 2. Off-state voltage waveform Linear waveform 3. Peak off-state voltage VD = 200 V 4. Gate open R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 dv/dt=0.8VD/(t2 - t1) Page 2 of6 BCR08DS-14A Preliminary Performance Curves Maximum On-State Characteristics 10 Rated Surge On-State Current 1 10 Surge On-State Current (A) 10−1 1.0 1.5 3.0 0 100 4.0 PGM = 1W PG(AV) = 0.1W IGM = 0.5A IFGT I, IRGT I, IRGT III VGD = 0.2V 101 102 101 102 103 103 Typical Example IFGT I ,IRGT I,IRGTIII 102 IFGT III VD=6V RL=6Ω 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 –40 2 Gate Trigger Current vs. Junction Temperature VGT = 2V 101 4 Gate Characteristics VGM = 6V 100 3.5 6 Conduction Time (Cycles at 60Hz) 10−1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 2.5 8 On-State Voltage (V) 101 Gate Voltage (V) 2.0 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) 10 0 0 40 80 120 Junction Temperature (°C) R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tj = 25°C 102 30 103 104 100 101 25 20 15 10 5 0 10−1 102 Conduction Time (Cycles at 60Hz) Page 3 of6 BCR08DS-14A Preliminary Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 Case Temperature (°C) On-State Power Dissipation (W) 2.0 1.6 1.2 0.8 360° Conduction Resistive, inductive loads 0.4 0.4 0.6 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 Holding Current vs. Junction Temperature 5 4 3 0 40 80 120 160 Typical Example 10 2 10 1 –40 0 40 80 120 160 Junction Temperature (°C) Latching Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature T2+, G– Typical Example 0 T2–, G– T2+, G+ Typical Example T2–, G+ –40 103 Junction Temperature (°C) 1 −1 Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Repetitive Peak Off-State Current vs. Junction Temperature Distribution 10 360° Conduction Resistive, inductive loads 40 RMS On-State Current (A) 2 10 60 1.4 2 10 80 RMS On-State Current (A) 10 –40 10 Latching Current (mA) 0.8 0 40 80 120 Junction Temperature (°C) R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 160 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) 0.2 Typical Example 10 100 0 0 10 120 20 0 10 Curves apply regardless of conduction angle 140 160 Typical Example 140 120 100 80 60 40 20 0 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of6 Preliminary Breakover Voltage vs. Rate of Rise of Off-State Voltage Commutation Characteristics (Tj=125°C) 101 160 Typical Example Tj = 125°C 140 120 100 80 60 I Quadrant III Quadrant 40 20 0 100 101 102 103 Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) BCR08DS-14A III Quadrant 100 I Quadrant Minimum Characteristics Value 10−1 10−1 Rate of Rise of Off-State Voltage (V/μs) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Gate Trigger Current vs. Gate Current Pulse Width 103 Conditions VD = 200V IT = 1A τ = 500μs Tj = 125°C Typical Example 100 101 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits Typical Example 6Ω 6Ω IRGT III IRGT I A 6V V 102 A 6V 330Ω 330Ω V Test Procedure I Test Procedure II 6Ω 6Ω IFGT I IFGT III 101 0 10 A 6V 101 Gate Current Pulse Width (μs) R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 102 V 330Ω Test Procedure III A 6V V 330Ω Test Procedure IV Page 5 of6 BCR08DS-14A Preliminary Package Dimensions Package Name SOT-223 JEITA Package Code RENESAS Code PRSP0004ZA-A Previous Code MASS[Typ.] 0.12g 6.6 ± 0.1 Unit: mm 1.8 max. 3.0 ± 0.1 0.05 ± 0.05 1.0 ± 0.2 7.0 ± 0.3 1.75 3.5 ± 0.2 1.75 0.33 ± 0.1 0.74 ± 0.1 0.33 ± 0.1 0.1 2.3 0.1 Ordering Information Orderable Part Number Packing Quantity BCR08DS-14AT13#B10 Embossed Tape 3000 pcs. BCR08DS-14AT13#B12 Embossed Tape 3000 pcs. Note : Please confirm the specification about the shipping in detail. R07DS0258EJ0200 Rev.2.00 Aug 07, 2013 Remark Taping direction “T1” Taping direction “T1” Page 6 of6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics 3. 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