Diodes DMN61D9UW N-channel enhancement mode mosfet Datasheet

DMN61D9UW
N-CHANNEL ENHANCEMENT MODE MOSFET
NEW PRODUCT
NEW PRODUCT
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON) max
60V
2Ω @ VGS = 5.0V
2.5Ω @ VGS = 2.5V
ID max
TA = +25°C
340mA
300mA
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected Up To 2kV


Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
ideal for high-efficiency power management applications.
Applications
Mechanical Data




Case: SOT323

Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish  Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (Approximate)
Motor Control
Power Management Functions
Backlighting
D
SOT323
D
G
S
G
Gate Protection
Diode
ESD protected up to 2kV
Top View
S
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN61D9UW-7
DMN61D9UW-13
Notes:
Case
SOT323
SOT323
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1AC= Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
Code
B
Month
Code
Jan
1
2015
C
2016
D
2017
E
2018
F
2019
G
2020
H
2021
I
2022
J
2023
K
2024
L
2025
M
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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© Diodes Incorporated
DMN61D9UW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 5.0V
Steady
State
t<5s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
60
±20
340
270
ID
mA
400
300
0.4
1.2
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
Unit
V
V
IS
IDM
mA
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
t<5s
Total Power Dissipation (Note 6)
Steady State
t<5s
Operating and Storage Temperature Range
RθJA
TJ, TSTG
Unit
mW
°C/W
mW
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
RθJA
PD
Thermal Resistance, Junction to Ambient (Note 6)
Electrical Characteristics
Value
320
393
306
440
289
235
-55 to +150
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
60
—
—
—
—
—
—
1.0
±10
V
µA
µA
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(TH)
0.5
—
1.0
V
RDS(ON)
—
1.2
1.6
2.5
2.0
2.5
3.5
Ω
|Yfs|
VSD
200
—
—
0.75
—
1.4
mS
V
VDS = 10V, ID = 250µA
VGS = 5.0V, ID = 0.05A
VGS = 2.5V, ID = 0.05A
VGS = 1.8V, ID = 0.05A
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
—
—
—
—
—
—
—
—
—
—
—
28.5
3.9
2.5
65
0.4
0.1
0.1
2.1
1.8
14.4
8.4
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
tD(ON)
tR
tD(OFF)
tF
Test Condition
VDS = 30V, VGS = 0V
f = 1.0MHz
f = 1MHz , VGS = 0V, VDS = 0V
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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November 2015
© Diodes Incorporated
DMN61D9UW
1.0
0.8
VDS = 5.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 4.5V
0.6
VGS = 3.0V
VGS = 2.5V
0.4
VGS = 2.0V
VGS = 1.8V
0.2
0.6
0.4
T A = 150C
0.2
TA = 125C
TA = 85C
T A = 25C
VGS = 1.5V
TA = -55 C
0.0
1
2
3
4
V DS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
4
3.5
3
2.5
VGS = 2.5V
2
1.5
1
VGS = 5.0V
0.5
0
0
0.2
0.4
0.6
0.8
ID , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0.5
5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
3
2.5
I D = 50mA
2
1.5
1
1
0
5
10
15
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
20
2.2
4.5
VGS = 2.5V
VGS = 4.5V
4
2
RD S(ON ), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
NEW PRODUCT
NEW PRODUCT
0.8
3.5
3
TA = 150C
2.5
T A = 125 C
TA = 85C
2
1.5
T A = 25C
1
T A = -55C
0.5
0
0
0.2
0.4
0.6
0.8
ID , DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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I D = 50mA
1.8
1.6
VGS = 5.0V
1.4
I D = 50mA
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Junction
Temperature
150
November 2015
© Diodes Incorporated
4.5
VGS GATE THRESHOLD VOLTAGE (V)
CT , JUNCTION CAPACITANCE (pF)
100
Ciss
10
C oss
Crss
f=1MHz
f=
MHZ
0
5
4
VDS = 10V
3.5
I D = 250mA
3
2.5
2
1.5
1
0.5
0
1
10
15
20
25
30
35
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0.1
0.2
0.3
0.4
0.5
Q g, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
10
R DS(on)
Limited
ID, DRAIN CURRENT (A)
NEW PRODUCT
NEW PRODUCT
DMN61D9UW
1
0.1
DC
PW = 10s
PW = 1s
0.01
T J (m ax ) = 150°C
PW = 100ms
T C = 25°C
0.001
0.1
V GS = 5V
Single Pulse
DUT on 1 * MRP Board
PW = 10ms
PW = 1ms
PW = 100µs
1
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DMN61D9UW
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r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
NEW PRODUCT
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 391°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 12 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
D
SOT323
Dim Min Max
Typ
A1 0.00 0.10
0.05
A2 0.90 1.00
0.95
b
0.25 0.40
0.30
c
0.10 0.18
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1 1.15 1.35
1.30
e
0.650 BSC
e1 1.20 1.40
1.30
F 0.375 0.475 0.425
L
0.25 0.40
0.30
a
8°
All Dimensions in mm
A2
c
A1
a
e
L
b
E
E1
e1
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version
X
Y
Y1
Dimensions
C
G
X
Y
Y1
G
Value
(in mm)
0.650
1.300
0.470
0.600
2.500
C
DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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IMPORTANT NOTICE
NEW PRODUCT
NEW PRODUCT
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Copyright © 2015, Diodes Incorporated
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DMN61D9UW
Document number: DS38027 Rev. 2 - 2
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November 2015
© Diodes Incorporated