Single P-channel MOSFET ELM529575A-S ■General description ■Features ELM529575A-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=-60V Id=-18A Rds(on) = 68mΩ (Vgs=-10V) Rds(on) = 78mΩ (Vgs=-4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Symbol Drain-source voltage Vds -60 V Gate-source voltage Vgs ±20 -18 -12 V -50 -12 23 A A mJ Ta=25°C Ta=70°C Continuous drain current Pulsed drain current Single pulse avalanche current Avalanche energy Id Idm Ias Eas L=0.1mH Tc=25°C Tc=70°C Power dissipation 40 15 -55 to 150 Pd Junction and storage temperature range A Tj, Tstg W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol Rθja ■Pin configuration Typ. Max. 62.5 Unit °C/W ■Circuit TO-252-3(TOP VIEW) D TAB 2 1 Pin No. Pin name 1 2 3 GATE DRAIN SOURCE 3 5-1 G S Single P-channel MOSFET ELM529575A-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Vgs=0V, Id=-250μA Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=-48V, Vgs=0V, Ta=85°C -20 Vds=0V, Vgs=±20V Static drain-source on-resistance Rds(on) Max. body-diode continuous current DYNAMIC PARAMETERS Ciss Coss Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Crss Turn-on rise time Turn-off delay time Turn-off fall time -1.0 -20 Qg Qgs Qgd nA -2.5 V A 55 68 Vgs=-4.5V, Id=-12A 65 78 Vds=-15V, Id=-3.2A Is=-3A, Vgs=0V 12 -0.8 Vgs=0V, Vds=-25V, f=1MHz 1200 140 Id=-10A td(on) Vgs=-10V, Vds=-30V tr RL=3Ω, Id=-18A td(off) Rgen=2.5Ω tf 5-2 mΩ -1.3 S V -10 A 2000 pF pF 90 Vgs=-10V, Vds=-30V μA ±100 Vgs=-10V, Id=-18A Is Input capacitance Output capacitance Gate-source charge Gate-drain charge Turn-on delay time V -1 Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Gfs Vsd -60 Vds=-48V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit pF 25 5 8 40 nC nC nC 10 10 20 20 ns ns 45 80 ns 25 40 ns AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM529575A-S Typical Characteristics ■Typical electrical and thermal characteristics ©Alfa-MOS Technology Corp. Rev.A Aug. 2012 www.alfa-mos.com Page 3 5-3 AFP9575S Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET Single P-channel MOSFET ELM529575A-S Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Aug. 2012 www.alfa-mos.com Page 4 5-4 AFP9575S Alfa-MOS 60V P-Channel Enhancement Mode MOSFET Single P-channel MOSFET Technology ELM529575A-S ■Test circuit and waveform Typical Characteristics ©Alfa-MOS Technology Corp. Rev.A Aug. 2012 www.alfa-mos.com Page 5 5-5