CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 1/9 High Cutoff Frequency NPN Epitaxial Planar Transistor FBP5096G3 Description The FBP5096G3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and CATV band. Symbol Outline FBP5096G3 WBFBP-03A B：Base C：Collector E：Emitter Features • Low Noise and High Gain: • NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz ∣S21∣² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz Applications • Low noise and high gain amplifiers & Oscillator buffer amplifiers • Cordless Phone : LNA , MIX ,and OSC • Remote Cotroller FBP5096G3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 2/9 Absolute Maximum Ratings • Maximum Ratings (Ta=25°C) Parameters Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC Pd Tj Tstg Limits 10 18 2.5 20 150 125 -50~125 *1 Unit V V V mA mW °C °C Note: *1 Here we define the point DC current gain drops off. Electrical Characteristics • Characterization Information (Ta=25°C) Parameters Collector Cutoff Current Emitter Cutoff Current DC Current Gain Cutoff Frequency Minimum Noise Figure Associated Gain Insertion Gain |S21|2 In 50 Ohm system Output Capacitance Conditions Symbol Min VCB =3V, IE=0 ICBO VEB =1V IEBO VCE =1V, IC =10mA hFE(1) 50 VCE =2V, IC =7mA hFE(2) 82 VCE =1V, IC =10mA fT VCE =3V, IC =12mA VCE =2V, IC =4.2mA, f =0.9GHz NFmin VCE =5V, IC =4.5mA, f =0.9GHz VCE =2V, IC =4.2mA, f =0.9GHz GA VCE =5V, IC =4.5mA, f =0.9GHz VCE =2V, IC =4.2mA, f =0.9GHz |S21|2 VCE =5V, IC =4.5mA, f =0.9GHz VCB =10V, IE=0, f = 0.9GHz Cob - Typ. Max Unit 1 µA 1 µA 180 7.6 GHz 9 GHz 1.4 dB 1.6 dB 12 dB 13.5 dB 12.8 dB 13.5 dB 0.7 1.0 pF S-Parameters • VC=2V, IC=4.2mA, IB=60μA FREQ. (GHz) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FBP5096G3 S11 Mag 0.604 0.524 0.454 0.399 0.355 0.320 0.291 Ang -54.55 -68.94 -81.62 -92.38 -102.51 -111.90 -121.04 S21 Mag 7.842 7.093 6.422 5.768 5.226 4.756 4.367 Ang 133.59 123.62 114.96 107.71 101.24 95.56 90.53 S12 Mag 0.067 0.077 0.084 0.090 0.096 0.101 0.107 S22 Ang 51.54 48.20 46.25 45.71 45.45 45.48 46.55 Mag 0.669 0.583 0.518 0.468 0.431 0.400 0.380 Ang -35.46 -39.37 -41.88 -43.32 -44.21 -44.69 -44.62 CYStek Product Specification CYStech Electronics Corp. 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 0.268 0.249 0.237 0.225 0.221 0.218 0.216 0.220 0.223 0.229 0.239 0.246 0.255 0.266 0.275 0.283 0.296 0.301 0.314 -129.71 -138.30 -147.20 -155.29 -163.42 -171.96 -179.45 173.74 166.14 160.61 154.93 149.44 146.00 141.03 137.61 134.78 131.62 128.73 126.55 4.011 3.717 3.490 3.229 3.049 2.880 2.708 2.568 2.465 2.311 2.230 2.159 2.032 2.008 1.914 1.845 1.807 1.734 1.678 85.55 81.44 77.18 73.05 69.95 65.80 62.11 59.78 55.42 52.89 50.57 46.58 44.85 41.73 38.98 36.23 34.63 30.54 29.10 0.113 0.118 0.125 0.131 0.137 0.144 0.151 0.158 0.167 0.173 0.181 0.190 0.198 0.207 0.215 0.225 0.235 0.242 0.252 46.59 47.32 48.06 48.45 48.55 49.30 49.54 49.59 49.92 49.56 49.96 49.43 49.13 48.98 48.15 47.73 47.19 46.23 45.96 Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 3/9 0.364 0.348 0.339 0.330 0.324 0.318 0.314 0.309 0.310 0.305 0.305 0.300 0.298 0.298 0.295 0.293 0.293 0.290 0.292 -45.20 -45.38 -45.42 -46.12 -46.58 -47.16 -48.21 -48.87 -49.95 -51.14 -52.25 -54.01 -54.87 -56.73 -58.27 -60.00 -61.99 -63.35 -66.03 • VC=5V, IC=4.5mA, IB=60μA FREQ. (GHz) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 FBP5096G3 S11 Mag 0.601 0.520 0.448 0.391 0.343 0.304 0.271 0.244 0.221 0.204 0.188 0.180 0.174 0.168 0.171 0.173 0.177 0.187 0.193 0.202 0.214 0.223 0.230 0.244 Ang -50.63 -63.63 -75.05 -84.69 -93.82 -102.33 -110.71 -118.73 -126.87 -135.86 -144.08 -153.03 -162.61 -171.25 -179.18 171.39 164.95 158.33 151.69 148.00 142.43 138.68 135.64 132.44 S21 Mag 8.306 7.547 6.868 6.188 5.624 5.124 4.716 4.336 4.014 3.777 3.486 3.297 3.121 2.930 2.777 2.676 2.496 2.413 2.345 2.192 2.181 2.076 1.997 1.961 Ang 135.16 125.50 116.98 109.83 103.45 97.83 92.86 87.94 83.94 79.76 75.61 72.75 68.59 64.89 62.84 58.35 55.94 53.90 49.72 48.29 45.23 42.50 39.66 38.47 S12 Mag 0.058 0.065 0.072 0.077 0.082 0.087 0.092 0.097 0.102 0.108 0.114 0.120 0.126 0.133 0.140 0.148 0.155 0.162 0.171 0.178 0.189 0.196 0.206 0.217 S22 Ang 51.44 48.75 47.60 47.52 47.79 48.29 49.77 50.18 51.28 52.42 53.16 53.50 54.63 55.21 55.36 56.18 55.92 56.69 56.35 56.24 56.43 55.84 55.56 55.08 Mag 0.678 0.602 0.546 0.505 0.475 0.451 0.436 0.424 0.412 0.407 0.401 0.398 0.395 0.393 0.390 0.393 0.390 0.393 0.390 0.389 0.392 0.390 0.390 0.392 Ang -29.88 -32.11 -33.33 -33.75 -33.95 -33.81 -33.39 -33.71 -33.60 -33.56 -34.10 -34.42 -34.93 -35.76 -36.39 -37.29 -38.39 -39.34 -40.76 -41.57 -43.10 -44.47 -46.00 -47.69 CYStek Product Specification CYStech Electronics Corp. 2.7 2.8 0.249 0.262 129.17 127.23 1.884 1.820 33.93 32.88 Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 4/9 0.224 0.235 54.51 54.48 0.391 0.395 -48.94 -51.05 Ga (dB) 18.89 15.66 13.05 10.97 9.34 8.08 7.10 6.33 5.68 5.48 F50-S (dB) 1.67 1.4 1.42 1.57 1.79 2.04 2.30 2.50 2.62 2.65 F50-M (dB) 2.33 1.74 2.01 1.82 1.79 2.45 1.87 2.50 2.71 2.91 G50 (dB) 17.89 15.22 12.80 10.86 9.19 7.84 6.69 5.64 4.78 4.50 Ga (dB) 19.43 16.36 13.85 11.84 10.24 9.00 8.03 7.27 6.64 6.45 F50-S (dB) 1.80 1.51 1.51 1.65 1.85 2.09 2.32 2.51 2.64 2.68 F50-M (dB) 2.40 1.84 2.38 1.88 1.88 2.50 1.81 2.61 2.63 2.92 G50 (dB) 18.39 15.83 13.47 11.54 9.89 8.55 7.40 6.35 5.50 5.20 • Smoothed noise data (VC=2V, IC=4.2mA, IB=60μA) FREQ. (GHz) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 2.8 FMIN (dB) 0.80 1.01 1.21 1.42 1.63 1.84 2.04 2.25 2.46 2.53 GAMMA OPT Mag Ang 0.622 13.9 0.401 29.9 0.282 48.2 0.239 68.6 0.246 90.8 0.276 114.6 0.303 139.6 0.301 165.5 0.242 -167.8 0.206 -158.8 Rn (To 50) 0.45 0.35 0.29 0.27 0.24 0.21 0.16 0.14 0.17 0.19 • Smoothed noise data (VC=5V, IC=4.5mA, IB=60μA) FREQ. (GHz) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 2.8 FMIN (dB) 0.87 1.08 1.28 1.49 1.70 1.91 2.12 2.33 2.54 2.61 GAMMA OPT Mag Ang 0.631 12.4 0.411 26.3 0.288 42.5 0.237 61.0 0.233 81.7 0.251 104.9 0.267 130.5 0.256 158.5 0.193 -170.9 0.157 -160.1 Rn (To 50) 0.49 0.38 0.32 0.29 0.27 0.23 0.19 0.16 0.19 0.22 HSPICE 2G.6 Model • NPN BJT Parameters IS=1.444E-16 (A) BF=85.9 NF=1.0 VAF=45.9 (V) IKF=160.3E-3 (A) ISE=2.0E-18 (A) NE=2.0 BR=18.54 NR=1.01 VAR=6.299 IKR=10.0E-3 ISC=1.21E-16 NC=1.01 RB=4.30 (Ohm) IRB=20.0E-3 (A) RBM=2.78 (Ohm) RE=1.011 (Ohm) RC=16.69 (Ohm) CJE=6.04E-13 (F) VJE=1.003 (V) MJE=0.3882 TF=1.22E-11 (Sec) XTF=1.70 VTF=0.69 (V) ITF=0.1 (A) PTF=10.0 (deg) CJC=2.38E-13 (F) VJC=0.7 (V) MJC=0.4474 XCJC=0.3 TR=1.0E-9 (Sec) CJS=2.43E-13 (F) VJS=0.5734 (V) MJS=0.3798 XTB=0.0 EG=1.11 (eV) XTI=3.0 FC=0.9 TNOM=25 (°C) • B’-E’ DIODE Parameters FBP5096G3 CYStek Product Specification CYStech Electronics Corp. IS=1.0E-22 (A) RS=10.0 (Ohm) N=1.0 TT=0.0 (Sec) Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 5/9 CJO=1.0E-15 (F) VJ=1.003 (V) M=0.3882 EG=1.11 (eV) XTI=3.0 FC=0.9 BV=0.0 (V) IBV=1.0E-3 (A) KF=0.0 AF=1.0 TNOM=25 (°C) • C’-S’ DIODE Parameters IS=1.0E-22 (A) CJO=1.0E-15 (F) RS=0.0 (Ohm) VJ=0.5734 (V) N=1.0 M=0.3798 TT=0.0 (Sec) EG=1.11 (eV) XTI=3.0 FC=0.5 BV=0.0 (V) IBV=1.0E-3(A) KF=0.0 AF=1.0 TNOM=27 (°C) • Other Parasitic Parameters REX=0.0 (Ohm) RSS=10.0 (Ohm) RBX=0.0 (Ohm) RSC=250.0 (Ohm) RCX=0.0 (Ohm) CSP=20.89 (fF) RSX=5.0 (Ohm) CSC=41.79 (fF) RSP=450.0 (Ohm) C1=70 (fF) C2=150 (fF) C3=80 (fF) Le=0.6 (nH) Lb=0.85 (nH) Lc=0 (nH) L1=0.5 (nH) L2=0.5 (nH) L3=0.6 (nH) Transistor Chip Equivalent Circuit Package Equivalent Circuit C3 C’ B L1 G-P B’ RBX Rsp C S’ CSP Base RSC CSC E REX 0.1nH LC C Lb Transistor S Chip B C1 E L2 Collector C2 Le RSS RSX L3 Emitter FBP5096G3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 6/9 Characteristic Curves Fig.2 Typical Forward Current Gain & Collector Current 100 1.00E-01 90 1.00E-02 80 1.00E-03 70 1.00E-04 Current Gain Collector and Base Currents (A) Fig.1 Typical Forward Gummel Plot 1.00E+00 VCE=1V 1.00E-05 1.00E-06 60 50 40 1.00E-07 30 1.00E-08 20 1.00E-09 10 1.00E-10 0 0.2 0.4 0.6 0.8 1 VCE=1V 0 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.2 Collector Current (A) Base-Emitter Bias Voltage (V) Fig.3 Typical Output Characteristics Fig.4 Typical fT & Collector Current 5.0E-03 1.0E+10 Vce = 1V Vce = 3 V 9.0E+09 Ib=50uA 8.0E+09 Cutoff Frequency (Hz) Collector Currennt (A) 4.0E-03 Ib=40uA 3.0E-03 Ib=30uA 2.0E-03 Ib=20uA 6.0E+09 5.0E+09 4.0E+09 3.0E+09 2.0E+09 Ib=10uA 1.0E-03 7.0E+09 1.0E+09 0.0E+00 1.0E-04 0.0E+00 0 1 2 3 4 5 1.0E-03 Fig.5 Typical NFmin & Collector Current 4.5 18 4 16 3.5 14 Associated Gain (dB) 20 NFmin (dB) 1.0E-01 Fig.6 Typical Associated Gain & Collector Current 5 3 2.5 VCE=2V 2 1.0E-02 Collector Current (A) Collector Voltage (V) 1.5 VCE=2V 12 10 8 6 1 4 0.5 2 0 0 0.1 FBP5096G3 1 10 Collector Current (mA) 100 0.1 1 10 100 Collector Current (mA) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 7/9 Characteristic Curves(Cont.) Fig.7 Capacitance & Reverse-Biased Voltage 1 Capacitance (pF) Cob 0.1 0.1 1 10 Reverse Biased Voltage (V) FBP5096G3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 8/9 Recommended soldering footprint FBP5096G3 CYStek Product Specification Spec. No. : C212G3 Issued Date : 2006.07.18 Revised Date :2006.10.03 Page No. : 9/9 CYStech Electronics Corp. WBFBP-03A Dimension Marking: WBFBP-03A Plastic Surface Mounted Package CYStek Package Code: G3 *: Typical Inches Min. Max. 0.018 0.022 0.000 0.004 0.009 0.013 0.013(REF) 0.061 0.065 0.061 0.065 0.030(REF) 0.040(REF) DIM A A1 b b1 D E D2 E2 Millimeters Min. Max. 0.450 0.550 0.010 0.090 0.230 0.330 0.320(REF) 1.550 1.650 1.550 1.650 0.750(REF) 1.000(REF) DIM θ L L1 L2 L3 L4 k z Inches Min. Max. 0.040(TYP) 0.011(REF) 0.009(REF) 0.007(REF) 0.010(REF) 0.008(REF) 0.013(REF) 0.006(REF) Millimeters Min. Max. 1.000(TYP) 0.280(REF) 0.230(REF) 0.180(REF) 0.250(REF) 0.200(REF) 0.320(REF) 0.160(REF) Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. FBP5096G3 CYStek Product Specification