NTSAF345, NRVTSAF345 Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com TRENCH SCHOTTKY RECTIFIER 3.0 AMPERE 45 VOLTS Typical Applications SMA−FL CASE 403AA STYLE 6 • Switching Power Supplies including Tablet Adapters, and Flat Panel • • • • Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation MARKING DIAGRAM 3AR AYWWG Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements Weight: 95 mg (Approximately) 3AR A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† NTSAF345T3G SMA−FL (Pb−Free) 5000 / Tape & Reel NRVTSAF345T3G SMA−FL (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 2 1 Publication Order Number: NTSAF345/D NTSAF345, NRVTSAF345 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 112°C) Symbol Value Unit VRRM VRWM VR 45 V IO A 3.0 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 103°C IFRM 6.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C A 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 90 °C/W Typ Max Unit 0.482 0.4 0.63 0.55 1.75 1.45 7.5 3 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Instantaneous Forward Voltage (Note 3) (IF = 3 A, TJ = 25°C) (IF = 3 A, TJ = 125°C) VF Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NTSAF345, NRVTSAF345 TYPICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 150°C TA = 125°C 1 TA = 25°C TA = −55°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 0.2 0.3 0.5 0.4 TA = 150°C 10 TA = 125°C 1 TA = 25°C TA = −55°C 0.1 0.7 0.6 0.8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 0.9 1.E+00 1.E−01 1.E−02 TA = 150°C TA = 150°C 1.E−02 1.E−03 TA = 125°C TA = 125°C 1.E−03 1.E−04 1.E−04 1.E−05 1.E−05 TA = 25°C 1.E−06 TA = 25°C 1.E−06 1.E−07 1.E−07 10 15 20 25 30 35 40 45 10 15 20 25 30 35 40 45 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) TJ = 25°C 100 0.1 5 VR, INSTANTANEOUS REVERSE VOLTAGE (V) IF(AV), AVERAGE FORWARD CURRENT (A) 5 1 10 6 5 DC 4 Square Wave 3 2 1 RqJC = 26.9°C/W 0 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Device www.onsemi.com 3 140 NTSAF345, NRVTSAF345 TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 10 IPK/IAV = 20 IPK/IAV = 10 8 6 IPK/IAV = 5 4 Square Wave 2 DC 0 0 1 3 2 4 IF(AV), AVERAGE FORWARD CURRENT (A) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Forward Power Dissipation 100 50% Duty Cycle 20% 10 10% 5% 1 2% 1% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 t, PULSE TIME (S) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Thermal Characteristics 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (S) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case www.onsemi.com 4 NTSAF345, NRVTSAF345 PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b c D E E1 L D TOP VIEW A MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 RECOMMENDED SOLDER FOOTPRINT* c C SIDE VIEW SEATING PLANE 5.56 1.76 2X b 1.30 2X L BOTTOM VIEW DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTSAF345/D