DMN60H4D5SK3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) ID TC = +25°C Low Input Capacitance High BVDSS Rating for Power Application 600V 4.5Ω@VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Mechanical Data Case: TO252 (DPAK) (Type TH) Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Motor Control Backlighting Terminal Connections: See Diagram Below DC-DC Converters Weight: TO252 (DPAK) (Type TH) – 0.33 grams (Approximate) Power Management Functions TO252 (DPAK) (Type TH) D D G Equivalent Circuit Top View S Top View Pin Out Configuration Ordering Information (Note 4) Part Number DMN60H4D5SK3-13 Notes: Case TO252 (DPAK) (Type TH) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 60H4D5S YYWW DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 = Manufacturer’s Marking 60H4D5S = Product Type Marking Code YYWW = Date Code Marking YY or YY = Last Two Digits of Year (ex: 17 = 2017) WW or WW = Week Code (01 to 53) 1 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN60H4D5SK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) TC = +25°C Steady State VGS = 10V TC = +100°C Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 6) L = 60mH Avalanche Energy (Note 6) L = 60mH Peak Diode Recovery dv/dt 7 Symbol VDSS VGSS Value 600 ±30 2.5 1.6 2.6 1.0 33 5 ID IDM IAS EAS dv/dt Unit V V A A A mJ V/ns Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Symbol TC = +25°C TC = +100°C TC = +25°C Unit PD Max 41 16 RθJC TJ, TSTG 3.0 -55 to +150 °C/W °C W Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 600 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = ±30V, VDS = 0V VGS(TH) RDS(ON) VSD 2.0 — — — — — 4.0 4.5 1.5 V Ω V VDS = VGS, ID = 250μA VGS = 10V, ID = 1.0A VGS = 0V, IS = 2.0A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 273.5 30.8 4.2 3.5 8.2 1.1 3.7 9.8 10.5 33.4 13.2 172 682 — — — — — — — — — — — — — pF VDS = 25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 480V, ID = 2A ns ns ns ns ns μC Test Condition VGS = 10V, VDD = 300V, RG = 25Ω, ID = 2A dI/dt = 100A/µs, VGS = 0V, IF = 2A 5. Device mounted on an infinite heatsink. 6. Guaranteed by design. Not subject to production testing. 7. Short duration pulse test used to minimize self-heating effect. DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 2 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN60H4D5SK3 3.0 1 VGS = 6.0V 2.5 0.8 VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V VGS = 5.0V VGS = 7.0V VGS = 10V 2.0 VGS = 4.5V 1.5 1.0 VGS = 4.0V 0.6 0.4 85oC 0.2 0.5 150oC 125oC VGS = 3.5V 0.0 2 4 6 8 10 12 14 16 18 20 0 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () -55oC 0 0 3.9 3.8 3.7 3.6 3.5 3.4 3.3 VGS = 10V 3.2 3.1 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 6 10 9 ID = 1.0A 8 7 6 5 4 3 0 2 5 10 15 20 25 30 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 15 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 25oC VGS = 10V 150oC 12 125oC 9 6 85oC 3 25oC -55oC 0 2.5 VGS = 10V, ID = 1A 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 3 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature 3 of 7 www.diodes.com -25 April 2017 © Diodes Incorporated 10 4 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMN60H4D5SK3 9 8 7 6 5 4 3 VGS = 10V, ID = 1A 2 1 0 3.5 ID = 1mA 3 2.5 ID = 250µA 2 1.5 1 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 150 -50 Figure 7. On-Resistance Variation with Temperature 150 Figure 8. Gate Threshold Variation vs. Junction Temperature 1000 5 CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 4 3 2 TA = 1 TA = TA = 150oC 85oC TA = 25oC 125oC TA = -55oC 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current f = 1MHz 100 Coss 10 Crss 1 0 0 Ciss 0 1.5 10 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 10 RDS(ON) Limited PW = 10µs PW = 1µs ID, DRAIN CURRENT (A) 8 VGS (V) 6 4 VDS = 480V, ID = 2A 1 PW = 1s PW = 100ms PW = 10ms 0.1 TJ(Max) = 150℃ PW = 1ms TC = 25℃ PW = 100µs Single Pulse DUT on Infinite Heatsink VGS =10V 2 0 0.01 0 2 4 6 8 10 Qg (nC) 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Gate Charge Figure 12. SOA, Safe Operation Area DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 1 4 of 7 www.diodes.com 1000 April 2017 © Diodes Incorporated DMN60H4D5SK3 1 D=0.9 D=0.7 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 D=0.005 RθJC (t) = r(t) * RθJC RθJC = 2.91℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 5 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN60H4D5SK3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) (Type TH) E L3 A b3 7° ± 2° L5 c A4 Ø D 0 20 1. L4 H A2 7° ± 2° e 7° ± 2° b(3x) Gauge Plane L2 D1 E1 Seating Plane a L A1 2.90REF TO252 (DPAK) (Type TH) Dim Min Max Typ A 2.20 2.38 2.30 A1 0.00 0.10 A2 0.97 1.17 1.07 A4 0.10 REF b 0.72 0.85 0.78 b3 5.23 5.45 5.33 c 0.47 0.58 0.53 D 6.00 6.20 6.10 D1 5.30 REF e 2.286 BSC E 6.50 6.70 6.60 E1 4.70 4.92 4.83 H 9.90 10.10 10.30 L 1.40 1.70 1.60 L2 0.51 BSC L3 0.90 1.25 L4 0.60 1.00 0.80 L5 1.70 1.90 1.80 a 0° 8° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) (Type TH) X1 Dimensions C X X1 Y Y1 Y2 Y1 Y2 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 C Y X DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 6 of 7 www.diodes.com April 2017 © Diodes Incorporated DMN60H4D5SK3 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2017, Diodes Incorporated www.diodes.com DMN60H4D5SK3 Document number: DS39430 Rev. 2 - 2 7 of 7 www.diodes.com April 2017 © Diodes Incorporated