DMN2075UDW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • • • • • • • ID RDS(on) max V(BR)DSS TA = 25°C 48mΩ @ VGS = 4.5V 2.8A 59mΩ @ VGS = 2.5V 2.6A 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.006 grams (approximate) • • DC-DC Converters Power management functions • • SOT363 D D S D D G Top View Top View Internal Schematic Ordering Information (Note 3) Part Number DMN2075UDW-7 Notes: Case SOT363 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information G22 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2075UDW Document number: DS35542 Rev. 1 - 2 Mar 3 YM NEW PRODUCT Benefit and Features G22 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D September 2011 © Diodes Incorporated DMN2075UDW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Steady State t<5s Continuous Drain Current (Note 5) VGS = 2.5V Steady State t<5s ID Value 20 ±8V 2.8 2.2 ID 3.1 2.5 A ID 2.6 2.1 A A 2.8 2.2 20 1.0 ID Pulsed Drain Current (10μs pulse, Duty cycle = 1%) Maximum Continuous Body Diode Current Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 4) Steady state t<5s Thermal Resistance, Junction to Ambient (Note 4) Value 0.5 257 213 0.58 221 183 65 -55 to +150 RθJA Total Power Dissipation (Note 5) PD Steady state t<5s Thermal Resistance, Junction to Ambient (Note 5) RθJA Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJC TJ, TSTG Units W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 40 45 51 68 13 0.75 1.0 48 59 70 100 1.0 V Static Drain-Source On-Resistance 0.4 - VDS = VGS, ID = 250μA VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A VGS = 1.8V, ID = 1A VGS = 1.5V, ID = 1A VDS = 5V, ID = 3A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 594.3 64.5 57.7 1.5 7.0 0.9 1.4 7.4 9.8 28.1 6.7 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 3.6A VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Short duration pulse test used to minimize self-heating effect 7. Guaranteed by design. Not subject to production testing. DMN2075UDW Document number: DS35542 Rev. 1 - 2 2 of 6 www.diodes.com September 2011 © Diodes Incorporated DMN2075UDW 10 5 VGS = 8.0V VDS = 5.0V VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 4 VGS = 2.5V VGS = 2.0V VGS = 1.8V 6 VGS = 1.5V 4 3 2 TA = 150°C TA = 125°C TA = 85°C TA = 25°C 1 2 TA = -55° C VGS = 1.2V 0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 3.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω) 0 0 2 4 6 8 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT 8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2075UDW Document number: DS35542 Rev. 1 - 2 3 of 6 www.diodes.com 0 0.5 1.0 1.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 2.0 0.08 VGS = 4.5V 0.07 0.06 T A = 150°C TA = 125°C 0.05 TA = 85°C 0.04 TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 0 1 2 3 4 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 5 0.08 0.07 VGS = 2.5V ID = 1A 0.06 0.05 VGS = 4.5V ID = 5A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature September 2011 © Diodes Incorporated DMN2075UDW 1.2 4 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 5 1.0 0.8 0.6 0.4 3 2 1 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 Ciss TA = 150°C IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) 1,000 100 Coss Crss TA = 125°C TA = 85°C TA = 25°C f = 1MHz 10 0 TA = -55°C 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 20 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 100 ID , DRAIN CURRENT (A) NEW PRODUCT 1.4 10 1 PW = 10µs RDS(on) Limited DC PW = 10s PW = 1s PW = 100ms 0.1 PW = 10ms PW = 1ms PW = 100µs 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMN2075UDW Document number: DS35542 Rev. 1 - 2 100 4 of 6 www.diodes.com September 2011 © Diodes Incorporated DMN2075UDW r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 225°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 12 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D F L Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DMN2075UDW Document number: DS35542 Rev. 1 - 2 5 of 6 www.diodes.com September 2011 © Diodes Incorporated DMN2075UDW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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