NSP8814, NSP8818 Transient Voltage Suppressors Low Capacitance Surge Protection for High Speed Data www.onsemi.com The NSP8814 and NSP8818 transient voltage suppressors are designed specifically to protect 10/100 and GbE Ethernet signals from high levels of surge current. Low clamping voltage under high surge conditions make this device an ideal solution for protecting voltage sensitive lines leading to Ethernet transceiver chips. Low capacitance combined with flow-through style packaging allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high-speed differential lines. The integrated 4 and 8 lines of protection in flow-thru type packages offer a simplified solution with premier performance for 10/100 and GbE Ethernet applications. MARKING DIAGRAMS UDFN8 CASE 506CV 4D M G UDFN10 CASE 506CU Features • Protection for the Following IEC Standards: • • • • 4C M G IEC 61000−4−2 (ESD) ±30 kV (Contact) IEC61000−4−5 (Lightning) 35 A (8/20 ms) Flow−Thru Routing Scheme 2 pF Max, I/O to I/O UL Flammability Rating of 94 V−0 This is a Pb−Free Device XX = Specific Device Code M = Date Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NSP8814MUTAG UDFN8 (Pb−Free) 3000 / Tape & Reel NSP8818MUTAG UDFN10 (Pb−Free) 3000 / Tape & Reel Typical Applications • 10/100 and GbE Ethernet • MagJacks® / Integrated Magnetics • Notebooks/Desktops/Servers MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Operating Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Lead Solder Temperature − Maximum (10 Seconds) TL 260 °C IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD) ESD ±30 ±30 kV kV Maximum Peak Pulse Current 8/20 ms @ TA = 25°C 10/700 ms @ TA = 25°C IPP †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. A 35 20 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2017 February, 2017 − Rev. 0 1 Publication Order Number: NSP8814/D NSP8814, NSP8818 NSP8814 GND I/O I/O Pin2 Pin3 Pin6 Pin7 GND GND I/O I/O GND GND GND Pins 1, 4, 5, 8 Note: Common GND – Only minimum of 1 GND connection required NSP8818 GND I/O I/O = I/O GND GND GND I/O I/O I/O Pin1 Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10 I/O Pins 3, 8 Note: Common GND – Only minimum of 1 GND connection required I/O GND Figure 1. Pin Schematic ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Parameter Symbol VRWM IR VBR IT IPP Working Peak Voltage RDYN Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT VCL VBR VRWM V IR IT Test Current VHOLD Holding Reverse Voltage IHOLD Holding Reverse Current RDYN Dynamic Resistance VCL RDYN IPP Maximum Peak Pulse Current VC Clamping Voltage @ IPP VC = VHOLD + (IPP * RDYN) IPP Uni−Directional Surge Protection ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Reverse Working Voltage VRWM Forward Voltage Breakdown Voltage VF VBR Conditions Min Typ Max Unit 3.0 V V Any I/O to GND (Note 1) IF = 10 mA, GND to All IO Pins 0.5 0.85 1.1 IT = 1 mA, I/O to GND 3.2 3.5 5.0 V Reverse Leakage Current IR VRWM = 3.0 V, I/O to GND 0.5 mA Clamping Voltage VC IPP = 1 A, Any I/O to GND (8/20 ms pulse) 5.0 V Clamping Voltage VC IPP = 10 A, Any I/O to GND (8/20 ms pulse) 6.0 V Clamping Voltage VC IPP = 25 A, Any I/O to GND (8/20 ms pulse) 10 V Clamping Voltage VC IPP = 35 A, Any I/O to GND (8/20 ms pulse) 15 V Clamping Voltage VC IEC61000−4−2, ±8 kV Contact Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins 2.0 pF Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins and GND 5.0 pF See Figures 7 and 8 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. www.onsemi.com 2 Peak Value 100 20 tr = rise time to peak value [8 ms] tf = decay time to half value [20 ms] 18 16 IO−IO 14 Vpk (V) Ipp - PEAK PULSE CURRENT - %Ipp NSP8814, NSP8818 Half Value 50 12 10 8 IO−GND 6 4 2 0 0 tr 0 tf 0 5 10 15 20 Ipk (A) TIME (ms) Figure 2. IEC61000−4−5 8/20 ms Pulse Waveform 25 30 35 Figure 3. Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms per Figure 2) Peak Value 100 18 16 14 Vpk (V) Ipp - PEAK PULSE CURRENT - %Ipp 20 tr = rise time to peak value [10 ms] tf = decay time to half value [700 ms] Half Value 50 12 IO−IO 10 8 6 IO−GND 4 2 0 0 0 tr tf 0 2 4 6 TIME (ms) 90 14 16 18 20 10 80 0 70 −10 60 −20 VOLTAGE (V) VOLTAGE (V) 10 12 Ipk (A) Figure 5. Clamping Voltage vs. Peak Pulse Current (tp = 10/700 ms per Figure 4) Figure 4. IEC61000−4−5 10/700 ms Pulse Waveform 50 40 30 20 −30 −40 −50 −60 10 −70 0 −80 −10 −20 8 0 20 40 60 80 TIME (ns) 100 120 −90 −20 140 Figure 6. IEC61000−2−4 +8 kV Contact Clamping Voltage 0 20 40 60 80 TIME (ns) 100 120 Figure 7. IEC61000−2−4 −8 kV Contact Clamping Voltage www.onsemi.com 3 140 1.E−01 5.0 1.E−02 4.5 1.E−03 4.0 1.E−04 3.5 1.E−05 3.0 C (pF) I (A) NSP8814, NSP8818 1.E−06 1.E−07 1.E−08 2.5 2.0 IO−IO 1.5 1.E−09 1.0 1.E−10 0.5 1.E−11 1.E−12 −2 IO−GND 0 −1 0 1 2 V (V) 3 4 5 6 0 Figure 8. IV Characteristics 0.5 1.0 1.5 2.0 VBias (V) 2.5 3.0 Figure 9. CV Characteristics IO−GND IO−GND Figure 10. RF Insertion Loss Figure 11. Capacitance Over Frequency www.onsemi.com 4 3.5 NSP8814, NSP8818 1 2 3 NSP8814 RJ−45 Connector 4 5 6 DFN8 7 8 Black = Top Layer Red = Other Layer Figure 12. 10/100 Ethernet Layout Diagram and Flow−thru Routing Scheme 1 2 NSP8818 3 5 6 DFN10 7 8 Black = Top Layer Red = Other Layer Figure 13. GbE Ethernet Layout Diagram and Flow−thru Routing Scheme www.onsemi.com 5 RJ−45 Connector 4 NSP8814, NSP8818 PACKAGE DIMENSIONS UDFN8 2.2x2, 0.575P CASE 506CV ISSUE A PIN ONE REFERENCE 0.10 C 2X ÇÇÇ ÇÇÇ 0.10 C 2X L A B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM TERMINAL TIP. L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTION ÉÉÉ ÇÇÇ EXPOSED Cu TOP VIEW DETAIL B A (A3) 0.05 C MOLD CMPD ÉÉ ÇÇ ÇÇ A3 A1 DETAIL B 9X ALTERNATE CONSTRUCTIONS 0.05 C A1 SIDE VIEW C SEATING PLANE RECOMMENDED MOUNTING FOOTPRINT E3 e 0.575 10X e2 DETAIL A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 2.20 BSC 2.00 BSC 0.20 BSC 0.575 BSC 0.40 BSC 0.25 0.35 0.05 0.15 0.95 1.05 DIM A A1 A3 b D E E3 e e2 L L1 L2 1 4 b 0.40 0.10 M C A B 0.05 M C 0.20 PACKAGE OUTLINE NOTE 3 2.30 8X 2X L2 8 L 4X 5 e2 1 6X 0.22 0.575 0.20 e E3 BOTTOM VIEW 0.50 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 NSP8814, NSP8818 PACKAGE DIMENSIONS UDFN10 3.5x2, 0.575P CASE 506CU ISSUE O PIN ONE REFERENCE 0.10 C 2X 0.10 C 2X L A B D ÇÇÇ ÇÇÇ ÇÇÇ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L1 DETAIL A E ALTERNATE TERMINAL CONSTRUCTION ÉÉ ÉÉ ÇÇ EXPOSED Cu TOP VIEW DETAIL B A (A3) 0.05 C MOLD CMPD 13X ÉÉ ÉÉ ÇÇ A3 A1 DIM A A1 A3 b D E e e2 e3 L L1 L2 DETAIL B 0.05 C ALTERNATE CONSTRUCTIONS NOTE 4 A1 SIDE VIEW C SEATING PLANE MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 3.50 BSC 2.00 BSC 0.575 BSC 0.40 BSC 3.10 BSC 0.25 0.35 0.05 0.15 0.95 1.05 e3 RECOMMENDED MOUNTING FOOTPRINT* e DETAIL A 1 e2 5 3.50 2X 10X 3X L L2 2X 10 0.40 0.31 8X 1.10 0.50 2.30 6 13X e2 e BOTTOM VIEW b 0.10 M C A B 0.05 M C PACKAGE OUTLINE NOTE 3 1 9X 6X 0.575 0.22 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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