CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB030N10RV8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and halogen-free package Equivalent Circuit BVDSS ID @ TC=25°C, VGS=10V ID @ TA=25°C, VGS=10V VGS=10V, ID=20A RDSON(TYP) VGS=4.5V, ID=20A 100V 16.5A 5.7A 27.4mΩ 33.1mΩ Outline DFN3×3 MTB030N10RV8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB030N10RV8-0-T6-G Package Shipping DFN3×3 3000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB030N10RV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C Continuous Drain Current @ VGS=10V, TC=100°C Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=16A, VDD=25V TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range ID IDSM IDM IAS EAS PD PDSM Tj, Tstg Limits 100 ±20 16.5 10.4 5.7 4.6 66 *1 28 128 21 8.4 2.5 *2 1.6 *2 -55~+150 Unit Value 6 50 *2 Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on a 1 in² pad of 2oz copper, t≤10s. In practice RθJA will be determined by customer’s PCB characteristics. 125°C/W when mounted on a minimum pad of 2 oz. copper. 3. 100% tested by conditions of L=0.1mH, IAS=17A, VGS=10V, VDD=25V Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 MTB030N10RV8 Min. Typ. Max. 100 1 - 11.9 27.4 33.1 2.5 ±100 1 5 38 45 - 1703 100 7 27.8 6.3 3.7 42 - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=5A VGS=±20V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=55°C VGS =10V, ID=20A VGS =4.5V, ID=20A pF VDS=50V, VGS=0V, f=1MHz nC VDS=50V, VGS=10V, ID=20A CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 VSD *1 trr Qrr Min. - Typ. 13.6 13.8 40 4 1.9 Max. 20 21 60 6 - Unit - 0.74 21.3 19.7 16.5 1 - A Test Conditions ns VDS=50V, ID=20A, VGS=10V, RGS=1Ω Ω f=1MHz V ns nC IS=1A, VGS=0V IF=1A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature Recommended Soldering Footprint unit : mm MTB030N10RV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 4V 40 ID, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage 50 10V,9V,8V,7V, 6V, 5V 30 3.5V 20 10 VGS=3V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 VGS=3V VGS=4.5V 10V 100 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 10 0.1 1 10 ID, Drain Current(A) 0 100 4 6 8 10 12 14 16 IDR , Reverse Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 150 ID=20A R DS(ON), Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 2 120 90 60 30 2 VGS=10V, ID=20A RDSON@Tj=25°C : 27.4mΩ typ. 1.6 1.2 0.8 0.4 0 0 0 MTB030N10RV8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 10 Crss 1.6 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 1 0 10 20 30 40 VDS, Drain-Source Voltage(V) -75 -50 -25 50 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 1 VDS=15V 0.1 Pulsed Ta=25°C 0.01 0.001 VDS=20V, 50V, 80V from left to right 8 6 4 2 ID=20A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 3 6 9 12 15 18 21 24 Qg, Total Gate Charge(nC) 27 30 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 10 100 9 ID, Maximum Drain Current(A) RDS(ON) Limited ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 100μs 1 1ms 10ms 100ms 0.1 TA=25°C, Tj=150°C, VGS=10V RθJA =50°C/W, Single Pulse 1s DC MTB030N10RV8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 7 6 5 4 3 2 TA=25°C, VGS=10V, RθJA =50°C/W Single Pulse 1 0 0.01 0.01 8 1000 25 50 75 100 125 150 Tj, Junctione Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics 50 300 VDS=10V TJ(MAX) =150°C TA=25°C RθJA =50°C/W 250 Power (W) 40 ID, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 30 20 200 150 100 10 50 0 0 1 2 3 4 5 0 0.0001 VGS, Gate-Source Voltage(V) 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized EffectiveTransient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50 °C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB030N10RV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension Pin #1 MTB030N10RV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2. For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTB030N10RV8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C053V8 Issued Date : 2017.10.20 Revised Date : Page No. : 9/9 DFN3×3 Dimension Marking: D D D D B030 N10R Date Code S S S G 8-Lead DFN3×3 Plastic Package CYStek Package Code: V8 Millimeters Min. Max. 0.70 0.80 0.25 0.35 0.10 0.25 3.25 3.45 3.00 3.20 1.48 1.68 0.13 TYP 3.20 3.40 DIM A b c D D1 D2 D3 E Inches Min. Max. 0.028 0.031 0.010 0.014 0.004 0.010 0.128 0.136 0.118 0.126 0.058 0.066 0.005 TYP 0.126 0.134 DIM E1 E2 e H L L1 θ M Millimeters Min. Max. 3.00 3.20 2.39 2.59 0.65 BSC 0.30 0.50 0.30 0.50 0.13 TYP 8° 12° 0.15 Inches Min. Max. 0.118 0.126 0.094 0.102 0.026 BSC 0.012 0.020 0.012 0.020 0.005 TYP 8° 12° 0.006 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB030N10RV8 CYStek Product Specification