NTD3055-150, NVD3055-150 Power MOSFET 9.0 A, 60 V, N−Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • NVD Prefix for Automotive and Other Applications Requiring • 9.0 AMPERES, 60 VOLTS RDS(on) = 122 mW (Typ) Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant D N−Channel Typical Applications • • • • http://onsemi.com G Power Supplies Converters Power Motor Controls Bridge Circuits S 4 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) VGS VGS "20 "30 Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Vdc IDM 9.0 3.0 27 Apk Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) PD 28.8 0.19 2.1 1.5 W W/°C W W Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C EAS 30 mJ Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds °C/W RqJC RqJA RqJA 5.2 71.4 100 TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 6 3 DPAK CASE 369C (SURFACE MOUNT) STYLE 2 1 2 3 IPAK CASE 369D (STRAIGHT LEAD) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS Adc ID ID 1 1 2 4 Drain 4 Drain 2 1 3 Drain Gate Source A 3150 Y WW G 3150G Unit AYWW Value 3150G Symbol AYWW Rating 1 2 3 Gate Drain Source = Assembly Location* = Device Code = Year = Work Week = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NTD3055−150/D NTD3055−150, NVD3055−150 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 60 − − 70.2 − − − − − − 1.0 10 − − ±100 2.0 − 3.0 6.4 4.0 − − 122 150 − − 1.4 1.1 1.9 − gFS − 5.4 − mhos Ciss − 200 280 pF Coss − 70 100 Crss − 26 40 td(on) − 11.2 25 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 4.5 Adc) RDS(on) Static Drain−to−Source On−Voltage (Note 3) (VGS = 10 Vdc, ID = 9.0 Adc) (VGS = 10 Vdc, ID = 4.5 Adc, TJ = 150°C) VDS(on) Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) Vdc mV/°C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 3) Fall Time Gate Charge (VDS = 48 Vdc, ID = 9.0 Adc, VGS = 10 Vdc) (Note 3) ns tr − 37.1 80 td(off) − 12.2 25 tf − 23 50 QT − 7.1 15 Q1 − 1.7 − Q2 − 3.5 − VSD − − 0.98 0.86 1.20 − Vdc trr − 28.9 − ns ta − 21.6 − tb − 7.3 − QRR − 0.036 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 9.0 Adc, VGS = 0 Vdc) (Note 3) (IS = 19 Adc, VGS = 0 Vdc, TJ = 150°C) Reverse Recovery Time (IS = 9.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD3055−150, NVD3055−150 20 VGS = 10 V 16 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 20 VGS = 9 V VGS = 7 V VGS = 8 V 12 8 VGS = 6 V 4 VGS = 5 V 1 2 3 4 5 6 7 12 8 TJ = 25°C 4 TJ = 100°C 8 TJ = −55°C 3 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.5 VGS = 10 V 0.4 TJ = 100°C 0.3 0.2 TJ = 25°C TJ = −55°C 0.1 0 0 4 8 12 20 16 24 9 0.5 VGS = 15 V 0.4 0.3 TJ = 100°C 0.2 TJ = 25°C 0.1 TJ = −55°C 0 0 4 8 12 16 20 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−To−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 24 1000 2.2 2 5 4 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VGS = 0 V ID = 4.5 A VGS = 10 V TJ = 150°C 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 16 0 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 1.6 1.4 1.2 1 100 TJ = 125°C 10 TJ = 100°C 0.8 0.6 −50 −25 1 0 25 50 75 100 125 150 175 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 60 560 VDS = 0 V C, CAPACITANCE (pF) 480 VGS = 0 V VGS, GATE−TO−SOURCE VOLTAGE (V) NTD3055−150, NVD3055−150 TJ = 25°C Ciss 400 320 Crss 240 Ciss 160 Coss 80 Crss 0 5 VGS 0 VDS 5 10 15 10 20 12 QT 10 8 6 4 ID = 9 A TJ = 25°C 2 0 0 25 2 1 3 4 5 7 6 8 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 10 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 9 A VGS = 10 V t, TIME (ns) tr tf td(off) td(on) VGS = 0 V TJ = 25°C 8 6 4 2 0 10 1 10 0.6 100 0.68 0.76 0.84 0.92 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current VGS = 20 V SINGLE PULSE TC = 25°C 10 10 ms 100 ms 1 ms 10 ms 1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 dc 10 100 EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 100 ID, DRAIN CURRENT (AMPS) VGS Q2 Q1 1 32 ID = 7.75 A 24 16 8 0 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTD3055−150, NVD3055−150 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 D = 0.5 0.2 1 0.1 P(pk) 0.05 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.0001 0.00001 0.001 0.01 t, TIME (s) 0.1 1 10 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD3055−150G DPAK (Pb−Free) 75 Units / Rail NTD3055−150−1G IPAK (Pb−Free) 75 Units / Rail NTD3055−150T4G DPAK (Pb−Free) 2500 / Tape & Reel NTD3055−150T4H DPAK (Halide−Free) 2500 / Tape & Reel NVD3055−150T4G* DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 5 NTD3055−150, NVD3055−150 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE E A E C A b3 B c2 4 L3 D 1 2 Z Z H DETAIL A 3 L4 NOTE 7 b2 e b TOP VIEW c SIDE VIEW 0.005 (0.13) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. BOTTOM VIEW BOTTOM VIEW ALTERNATE CONSTRUCTION C H L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD3055−150, NVD3055−150 PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. 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