ISC IPD068P03L3 P-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
IPD068P03L3,IIPD068P03L3
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤6.8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·175°C operating junction temperature
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
-70
A
IDM
Drain Current-Single Pulsed
-280
A
PD
Total Dissipation @TC=25℃
100
W
Tj
Max. Operating Junction Temperature
175
℃
-55~175
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
1.5
℃/W
50
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
IPD068P03L3,IIPD068P03L3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID= -0.25mA
-30
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -0.15mA
-1.0
RDS(on)
Drain-Source On-Resistance
IGSS
TYP
MAX
UNIT
V
-2.0
V
VGS= -10V; ID= -70A
6.8
mΩ
Gate-Source Leakage Current
VGS= -20V;VDS= 0V
-0.1
μA
IDSS
Drain-Source Leakage Current
VDS= -30V; VGS= 0V
-1
μA
VSD
Diode forward voltage
IF= -70A, VGS = 0V
-1.2
V
isc website:www.iscsemi.cn
2
isc & iscsemi is registered trademark
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