DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Product Summary Features and Benefits BVDSS RDS(ON) Max ID TC = +25°C 100V 9.5mΩ @ VGS = 10V 29.5A Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. Backlighting Power Management Functions DC-DC Converters 100% Unclamped Inductive Switch (UIS) Test in Production High Conversion Efficiency Low RDS(ON) – Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 S D S D S D G D G Top View Internal Schematic Top View S Equivalent circuit Ordering Information (Note 4) Part Number DMT10H010LSS-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking T1010LS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 15 = 2015) WW = Week (01 to 53) T1010LS YY WW 1 DMT10H010LSS Document number: DS38035 Rev. 4 - 2 4 1 of 6 www.diodes.com December 2015 © Diodes Incorporated DMT10H010LSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS Steady State NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED Continuous Drain Current (Note 6), VGS = 10V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +100°C Value 100 ±20 11.5 9.2 ID A 29.5 18.6 75 3 10 15 ID Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 8), L=0.3mH Avalanche Energy (Note 8), L=0.3mH Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 1.4 90 48.8 1.9 66 35.8 10.1 RJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJC TJ, TSTG Unit W °C/W W °C/W °C/W °C -55 to +150 Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 — — — — — — 1 ±100 V µA nA VGS = 0V, ID = 1mA VDS = 80V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 1.9 8.0 9.0 10.0 0.8 2.8 9.5 12 14.5 1.3 V Static Drain-Source On-Resistance 1.4 — — — — VDS = VGS, ID = 250µA VGS = 10V, ID = 13A VGS = 6V, ID = 13A VGS = 4.5V, ID = 5A VGS = 0V, IS = 13A Ciss Coss Crss Rg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR — — — — — — — — — — — — — 3,000 875 63 1.0 71 11 16 12 17 52 37 49 85 — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 50V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDD = 50V, ID = 13A, VGS = 10V ns VDD = 50V, VGS = 10V, ID = 13A, Rg = 6Ω ns nC IF = 13A, di/dt = 100A/µs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMT10H010LSS Document number: DS38035 Rev. 4 - 2 2 of 6 www.diodes.com December 2015 © Diodes Incorporated DMT10H010LSS 30 30.0 VGS=4.5V VGS=5.0V 20.0 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VDS=5V VGS=3.5V VGS=6.0V 15.0 VGS=10.0V 10.0 5.0 20 15 10 125℃ 85℃ 150℃ 25℃ 5 VGS=3.0V 175℃ 0.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 3 0.012 0.011 0.01 VGS = 4.5V 0.009 0.008 VGS = 6V 0.007 VGS = 10V 0.006 0.005 0.004 0 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) -55℃ 0 0 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 6 0.05 0.04 ID = 13A 0.03 ID = 5A 0.02 0.01 0 0 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 2.5 0.02 VGS = 10V 0.018 0.016 150℃ 0.014 0.012 125℃ 0.01 85℃ 0.008 25℃ 0.006 0.004 -55℃ 0.002 0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED VGS=4.0V 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMT10H010LSS Document number: DS38035 Rev. 4 - 2 3 of 6 www.diodes.com VGS = 10V, ID = 13A 2 VGS = 6V, ID = 13A 1.5 1 VGS = 4.5V, ID = 5A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature December 2015 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 0.018 0.016 VGS = 4.5V, ID = 5A 0.014 VGS = 6V, ID = 13A 0.012 0.01 0.008 0.006 VGS = 10V, ID = 13A 0.004 0.002 0 3.5 3 2.5 ID=1mA 2 1.5 ID=250μA 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 25 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) 4 -50 30 VGS=0V, TJ=125℃ VGS=0V, TJ=150℃ 20 VGS=0V, TJ=175℃ 15 VGS=0V, TJ=85℃ 10 VGS=0V, TJ=25℃ 5 f=1MHz Ciss Coss 1000 Crss 100 VGS=0V, TJ=-55℃ 10 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 0 1.5 10 100 8 10 5 10 15 20 25 30 35 40 45 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 50 RDS(on) Limited I D, DRAIN CURRENT (A) VGS (V) NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DMT10H010LSS 6 VDS=50V, ID=13A 4 2 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 0.01 PW = 10ms T J(m ax) = 150°C PW = 1ms T A = 25°C PW = 100µs V GS = 10V Single Pulse DUT on 1 * MRP Board 0 0 15 30 45 60 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMT10H010LSS Document number: DS38035 Rev. 4 - 2 75 4 of 6 www.diodes.com 0.001 0.01 0.1 1 10 100 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 December 2015 © Diodes Incorporated DMT10H010LSS r(t), TRANSI ENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 90°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. SO-8 SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SO-8 X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMT10H010LSS Document number: DS38035 Rev. 4 - 2 5 of 6 www.diodes.com December 2015 © Diodes Incorporated DMT10H010LSS IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCEINFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMT10H010LSS Document number: DS38035 Rev. 4 - 2 6 of 6 www.diodes.com December 2015 © Diodes Incorporated