Single N-channel Trench MOSFET 30V, 28.2A, 4.0mΩ General Description Features The MDS1521 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1521 is suitable for DC/DC converter and general purpose applications. VDS = 30V ID = 28.2A @VGS = 10V RDS(ON) < 4.0mΩ @VGS = 10V < 5.5mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D 6(D) 7(D) 8(D) 5(D) 2(S) G 4(G) 3(S) 1(S) S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V ±20 V VGSS TC=25oC 28.2 TC=70oC Continuous Drain Current (1) ID o TA=25 C TA=70oC IDM o 18.8 40 TC=25 C 5.6 TC=70oC 3.6 PD TA=25oC TA=70oC Single Pulse Avalanche Energy (3) 15.1(3) Pulsed Drain Current Power Dissipation A 22.6 A W 2.5(3) 1.6(3) (2) Junction and Storage Temperature Range EAS 223 TJ, Tstg -55~150 Symbol Rating RθJA 50 RθJC 22 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case June. 2011. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS1521 – Single N-Channel Trench MOSFET 30V MDS1521 Part Number Temp. Range MDS1521URH Package Packing Quantity Rohs Status SOIC-8 Tape & Reel 3000 units Halogen Free o -55~150 C Electrical Characteristics (TJ = 25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V - - 1 - - 5 - - ±0.1 - 3.5 4.0 - 5.1 5.8 VGS = 4.5V, ID = 12A - 4.5 5.5 VDS = 5V, ID = 15A - 55 - 26.8 38.3 50.0 12.7 18.2 23.7 - 7.6 - - 13.3 - 1760 2514 3269 TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 15A Drain-Source ON Resistance Forward Transconductance TJ=125oC RDS(ON) gfs V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 15.0V, ID = 15A, VGS = 10V VDS = 15.0V, VGS = 0V, f = 1.0MHz nC Reverse Transfer Capacitance Crss 163 233 304 Output Capacitance Coss 340 486 632 Turn-On Delay Time td(on) - 9.3 - - 24.0 - - 39.2 - - 14.0 - 0.5 0.9 3.0 Ω - 0.81 1.1 V - 28.1 42.2 ns - 19.6 29.3 nC Rise Time Turn-Off Delay Time tr td(off) VGS = 10V, VDS = 15.0V, ID = 15A, RG = 3.0Ω Fall Time tf Gate Resistance Rg f=1 MHz VSD IS = 15A, VGS = 0V pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 15A, dl/dt = 100A/µs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7) 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 37.3A, VDD = 27V, VGS = 10V 3. T < 10sec. June. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. MDS1521 – Single N-Channel Trench MOSFET 30V Ordering Information 10 Drain-Source On-Resistance [mΩ] 3.5V ID, Drain Current [A] 25 4.5V 5.0V 20 8.0V VGS = 10V 15 3.0V 10 5 0 0.0 8 6 VGS = 4.5V 4 VGS = 10V 2 0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 20 25 30 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 40 1.8 ※ Notes : VGS=10V ID=15A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 1.4 1.2 1.0 ID = 15A 30 20 10 TA = 25℃ 0.8 0.6 -50 0 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 16 ※ Notes : 1 10 IDR, Reverse Drain Current [A] ID, Drain Current [A] ※ Notes : VDS = 5V 12 8 TA=25℃ 4 VGS = 0V TA=25℃ 0 10 10 -1 0 0 1 2 3 4 5 0.3 Fig.5 Transfer Characteristics June. 2011. Version 1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS1521 – Single N-Channel Trench MOSFET 30V 30 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 15A 3000 Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 Ciss 2500 2000 1500 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 Coss 2 500 Crss 0 0 0 0 5 10 15 20 25 30 35 40 45 5 10 50 15 20 25 30 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 35 Operation in This Area is Limited by R DS(on) 2 30 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 100 ms 1s 10s DC 0 10 10 20 15 10 5 Single Pulse TJ=Max rated TC=25℃ -1 10 25 0 25 -1 10 0 1 50 75 100 125 150 2 10 10 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 2 Zθ JC, Thermal Response 10 D=0.5 1 10 0.2 0.1 0.05 0 10 0.02 0.01 single pulse -1 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve June. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd. MDS1521 – Single N-Channel Trench MOSFET 30V 3500 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. June. 2011. Version 1.2 5 MagnaChip Semiconductor Ltd. MDS1521 – Single N-Channel Trench MOSFET 30V Physical Dimensions