N-Channel MOSFET 600V, 9A, 0.75Ω General Description Features The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications. D @ Tjmax @ VGS = 10V @ VGS = 10V Applications G VDS = 600V VDS = 660V ID = 9.0A RDS(ON) ≤ 0.75Ω Power Supply PFC High Current, High Speed Switching S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage TC=25 C VDSS 600 V 660 V VGSS ±30 V 9.0 A 5.7 A 32 A 48 W W/ oC ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Repetitive Avalanche Energy EAR(1) Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range Unit VDSS @ Tjmax o Continuous Drain Current (※) Rating PD 0.38 EAR 4.8 mJ Dv/dt 4.5 V/ns EAS 480 mJ TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 2.62 o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) (1) Thermal Resistance, Junction-to-Case Nov 2009. Version 2.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDF9N60 N-channel MOSFET 600V MDF9N60 Part Number Temp. Range Package Packing RoHS Status MDF9N60TH -55~150oC TO-220F Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 IDSS VDS = 600V, VGS = 0V - - 1 µA IGSS VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 4.5A gfs VDS = 30V, ID = 4.5A Forward Transconductance V - 100 nA 0.65 0.75 Ω 7.0 - S - 27 - - 8.2 - - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 10.7 Input Capacitance Ciss - 1160 VDS = 480V, ID = 9.0A, VGS = 10V(3) VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - 6.2 Output Capacitance Coss - 134 Turn-On Delay Time td(on) - 31 - 59 - 48 tf - 30 IS - 11 Rise Time tr Turn-Off Delay Time Fall Time td(off) VGS = 10V, VDS = 300V, ID = 9.0A, RG = 25Ω(3) nC pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD trr IS = 9.0A, VGS = 0V IF = 9.0A, dl/dt = 100A/µs(3) Qrr - - A 1.4 V - 360 ns - 3.9 µC Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤9.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10.8mH, IAS=9.0A, Nov 2009. Version 2.2 VDD=50V, Rg =25Ω, Starting TJ=25°C 2 MagnaChip Semiconductor Ltd. MDF9N60 N-channel MOSFET 600V Ordering Information 1.5 RDS(ON) [Ω ] 15 ID,Drain Current [A] Notes 1. 250㎲ Pulse Test 2. TC=25℃ Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 10 VGS=10.0V 1.0 VGS=20V 5 0.5 5 10 15 20 0 5 10 VDS,Drain-Source Voltage [V] 20 25 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 15 1. VGS = 10 V 2. ID = 4.5 A 2.5 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 1.1 1.0 0.9 0.8 -50 200 0 IDR Reverse Drain Current [A] ID [A] 150℃ -55℃ 25℃ 6 8 10 150℃ 10 25℃ 1 0.1 0.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Nov 2009. Version 2.2 200 ※ Notes : 1. VGS = 0 V 2. ID = 250㎂ 10 4 150 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. VDS=30V 2 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 1 50 o o TJ, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDF9N60 N-channel MOSFET 600V 20 VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 9A 8 C oss 2000 120V 300V Capacitance [pF] 480V 6 4 1500 C iss 1000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz C rss 2 500 0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 1 30 Fig.7 Gate Charge Characteristics 10 Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 10 10 µs 100 µs 1 8 1 ms ID, Drain Current [A] ID, Drain Current [A] 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 10 ms DC 1s 10 10 100 ms 0 -1 -2 10 -1 4 2 Single Pulse TJ=Max rated TC=25℃ 10 6 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 16000 single Pulse RthJC = 2.62℃/W TC = 25℃ 14000 D=0.5 0 10 12000 10000 0.1 Power (W) Zθ JC(t), Thermal Response 0.2 0.05 -1 10 0.02 0.01 2000 0 1E-5 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-4 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Nov 2009. Version 2.2 6000 4000 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=2.62℃/W single pulse 8000 4 MagnaChip Semiconductor Ltd. MDF9N60 N-channel MOSFET 600V 10 MDF9N60 N-channel MOSFET 600V Physical Dimensions 3 Leads, TO-220F Dimensions are in millimeters unless otherwise specified S y mbol A b b1 C D E e F G L L1 Q Q1 ￠R Nov 2009. Version 2.2 Min 4.50 0.63 1.15 0.33 15.47 9.60 Nom Max 4.93 0.91 1.47 0.63 16.13 10.71 2.54 2.34 6.48 12.24 2.79 2.52 3.10 3.00 2.84 6.90 13.72 3.67 2.96 3.50 3.55 5 MagnaChip Semiconductor Ltd. U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 94085 U.S.A Tel : 1-408-636-5200 Fax : 1-408-213-2450 E-Mail : [email protected] China Hong Kong Office Suite 1024, Ocean Centre 5 Canton Road, Tsim Sha Tsui Kowloon, Hong Kong Tel : 852-2828-9700 Fax : 852-2802-8183 E-Mail : [email protected] U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 (0) 1784-895-000 Fax : +44 (0) 1784-895-115 E-Mail : [email protected] Shenzhen Office Room 1803, 18/F International Chamber of Commerce Tower Fuhua Road3 CBD, Futian District, China Tel : 86-755-8831-5561 Fax : 86-755-8831-5565 E-Mail : [email protected] Japan Osaka Office 3F, Shin-Osaka MT-2 Bldg 3-5-36 Miyahara Yodogawa-Ku Osaka, 532-0003 Japan Tel : 81-6-6394-9160 Fax : 81-6-6394-9150 E-Mail : [email protected] Shanghai Office Room E, 8/F, Liaoshen International Building 1068 Wuzhong Road, (C) 201103 Shanghai, China Tel : 86-21-6405-1521 Fax : 86-21-6505-1523 E-Mail : [email protected] Korea 891, Daechi-Dong, Kangnam-Gu Seoul, 135-738 Korea Tel : 82-2-6903-3451 Fax : 82-2-6903-3668 ~9 Email : [email protected] Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : 886-2-2657-7898 Fax : 886-2-2657-8751 E-Mail : [email protected] DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. \ MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Nov 2009. Version 2.2 6 MagnaChip Semiconductor Ltd. MDF9N60 N-channel MOSFET 600V Worldwide Sales Support Locations