StrongIRFET™ IRFP7718PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters HEXFET® Power MOSFET VDSS 75V RDS(on) typ. 1.45m 1.80m D max G S ID (Silicon Limited) 355A ID (Package Limited) 195A D Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G IRFP7718PbF TO-247 S Source Orderable Part Number IRFP7718PbF 400 6 ID = 100A Limited By Package 4 TJ = 125°C 2 300 200 100 TJ = 25°C 0 4 8 12 16 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 D Drain Standard Pack Form Quantity Tube 25 ID, Drain Current (A) ( ) RDS(on), Drain-to -Source On Resistance m Package Type S TO-247AC G Gate Base part number D www.irf.com © 2015 International Rectifier 20 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback February 19, 2015 IRFP7718PbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Max. 355 250 195 1590 517 3.5 ± 20 Typ. Max. ––– ––– 42 ––– 1.45 1.80 1.60 ––– ––– 3.7 ––– 1.0 ––– 150 ––– 100 ––– -100 0.9 ––– A W W/°C V -55 to + 175 °C 300 10 lbf·in (1.1 N·m) 1160 2004 mJ See Fig 14, 15, 23a, 23b A mJ Typ. ––– 0.24 ––– Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Units Max. 0.29 ––– 40 Units °C/W Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 2mA VGS = 10V, ID = 100A m VGS = 6V, ID = 50A V VDS = VGS, ID = 250µA VDS =75 V, VGS = 0V µA VDS =75V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 233µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 1279A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 63A, VGS =10V. . Pulse drain current is limited at 780A by source bonding technology. 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 IRFP7718PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Min. 420 ––– ––– ––– ––– ––– ––– Typ. ––– 552 119 168 384 58 164 Max. ––– 830 ––– ––– ––– ––– ––– Units Conditions S VDS = 10V, ID =100A ID = 100A VDS = 38V nC VGS = 10V td(off) Turn-Off Delay Time ––– 266 ––– tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– 160 ––– 29550 ––– 2270 ––– 1395 ––– ––– ––– ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 2010 ––– VGS = 0V, VDS = 0V to 60V Coss eff.(TR) Output Capacitance (Time Related) ––– 2560 ––– VGS = 0V, VDS = 0V to 60V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. ––– ––– 355 ––– ––– 1590 VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 8.6 75 80 208 251 4.8 ––– ––– ––– ––– ––– ––– ns pF VDD = 38V ID = 100A RG= 2.6 VGS = 10V VGS = 0V VDS = 25V ƒ = 100KHz, See Fig.7 Diode Characteristics Symbol IS ISM 3 www.irf.com © 2015 International Rectifier Units A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 100A,VGS = 0V V/ns TJ = 175°C,IS =100A,VDS = 75V TJ = 25°C VDD = 64V ns TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback February 19, 2015 IRFP7718PbF ID, Drain-to-Source Current (A) TOP 100 BOTTOM 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 60µs PULSE WIDTH Tj = 25°C 10 BOTTOM 100 4.5V 60µs PULSE WIDTH Tj = 25°C 4.5V 1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 175°C 100 10 TJ = 25°C 1 VDS = 25V 60µs PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 ID = 100A VGS = 10V 2.0 1.5 1.0 0.5 7.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 1000000 Fig 6. Normalized On-Resistance vs. Temperature VGS, Gate-to-Source Voltage (V) C oss = C ds + C gd Ciss 10000 Coss Crss 1000 20 40 60 80 100 120 140 160 180 14 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss = C gd 100000 0 TJ , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics C, Capacitance (pF) 10 Fig 4. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics ID= 100A 12 VDS= 60V VDS= 38V VDS= 15V 10 8 6 4 2 0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) 1000 www.irf.com © 2015 International Rectifier 0 100 200 300 400 500 600 700 QG Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback February 19, 2015 IRFP7718PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 175°C 100 TJ = 25°C 10 100µsec 1msec 100 Limited by Package 10 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 1.0 0.0 0.5 1.0 1.5 2.0 0.1 2.5 1 10 VDS, Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 90 5.0 Id = 2.0mA 4.0 85 Energy (µJ) V(BR)DSS, Drain-to-Source Breakdown Voltage (V) DC 3.0 2.0 80 1.0 0.0 75 0 -60 -40 -20 0 20 40 60 80 100120140160180 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C ) Fig 12. Typical Coss Stored Energy Fig 11. Drain-to–Source Breakdown Voltage ( ) RDS(on), Drain-to -Source On Resistance m 10 2.2 VGS = 5.5V VGS = 6.0V VGS = 7.0V 2.0 VGS = 8.0V VGS = 10V 1.8 1.6 1.4 0 50 100 150 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 IRFP7718PbF Thermal Response ( ZthJC ) °C/W 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. (Single Pulse) 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 1200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 1000 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2015 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback February 19, 2015 IRFP7718PbF 30 4.0 25 IF = 60A VR = 64V 20 TJ = 25°C TJ = 125°C 3.5 3.0 IRRM (A) VGS(th) Gate threshold Voltage (V) 4.5 ID = 250µA ID = 1.0mA 2.5 2.0 15 10 ID = 1.0A 5 1.5 1.0 -75 -50 -25 0 25 50 75 0 100 125 150 175 0 200 TJ , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 1000 30 25 IF = 100A VR = 64V 20 TJ = 25°C TJ = 125°C IF = 60A VR = 64V 800 QRR (nC) IRRM (A) 400 15 TJ = 25°C TJ = 125°C 600 400 10 200 5 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 1000 IF = 100A VR = 64V QRR (nC) 800 TJ = 25°C TJ = 125°C 600 400 200 0 0 200 400 600 800 1000 diF /dt (A/µs) 7 Fig 21. Typical Stored Charge vs. dif/dt www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 IRFP7718PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2015 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback February 19, 2015 IRFP7718PbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015 IRFP7718PbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F) †† TO-247AC Moisture Sensitivity Level N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 02/19/2015 Comments Updated EAS (L =1mH) = 2004mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 63A, VGS =10V” on page 2 IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA To contact Interna onal Rec fier, please visit h p://www.irf.com/whoto‐call/ 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback February 19, 2015