DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Product Summary Features and Benefits V(BR)DSS RDS(ON) 50V 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Case: SOT23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Weight: 0.008 grams (approximate) SOT23 D ESD protected Top View Ordering Information Top View Equivalent Circuit (Note 4) Part Number DMN53D0U-7 DMN53D0U-13 Notes: S G Case SOT23 SOT23 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Shanghai A/T Site Chengdu A/T Site Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN53D0U Document number: DS37098 Rev. 2 - 2 53D = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D May 2014 © Diodes Incorporated DMN53D0U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol NEW PRODUCT Drain Source Voltage Value Unit VDSS 50 V Gate-Source Voltage Continuous VGSS ±12 V Drain Current (Note 5) Continuous Pulsed ID 300 500 mA Symbol Value Unit PD 520 mW RθJA 246 °C/W TJ, TSTG -55 to +150 °C IDM Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 50V, VGS = 0V IGSS ⎯ ⎯ ±10 µA VGS = ±12V, VDS = 0V VGS(th) 0.4 ⎯ 1.0 V VDS = VGS, ID = 250µA RDS(ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 2.0 2.5 3.0 Ω VGS = 5.0V, ID = 50mA VGS = 2.5V, ID = 50mA VGS = 1.8V, ID = 50mA VSD ⎯ ⎯ 1.4 V VGS = 0V, IS =115mA Input Capacitance Ciss ⎯ 37.1 ⎯ pF Output Capacitance Coss ⎯ 8.4 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 4.0 ⎯ pF Total Gate Charge Qg ⎯ 0.6 ⎯ nC Gate-Source Charge Qgs ⎯ 0.1 ⎯ nC Gate-Drain Charge Qgd ⎯ 0.1 ⎯ nC Turn-On Delay Time tD(on) ⎯ 2.1 ⎯ ns Turn-On Rise Time tr ⎯ 2.8 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 21 ⎯ ns tf ⎯ 14 ⎯ ns Gate-Body Leakage Unit Test Condition ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: VDS = 25V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN53D0U Document number: DS37098 Rev. 2 - 2 2 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN53D0U 2.0 1.5 VGS = 10V VDS = 5.0V VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 1.5 VGS = 4.0V VGS = 2.5V 1.0 VGS = 2.0V 0.5 0.9 0.6 TA = 150°C T A = 85°C 0.3 VGS = 1.8V T A = 125°C VGS = 1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 VGS = 1.8V 1.5 VGS = 2.5V 1 VGS = 5V 0.5 0.1 1 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 10 3 4 8 7 6 5 4 ID = 50mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.4 VGS = 4.5V 2.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.5 0 0.01 TA = 25°C TA = -55°C 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT VGS = 3.5V 2.5 TA = 150°C 2 T A = 125°C 1.5 TA = 85°C 1 TA = 25°C TA = -55°C 0.5 2 VGS = 5V ID = 500mA 1.8 1.6 1.4 1.2 VGS = 2.5V ID = 100mA 1 0.8 0.6 0.4 0.2 0 0 0.3 0.6 0.9 1.2 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN53D0U Document number: DS37098 Rev. 2 - 2 1.5 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature May 2014 © Diodes Incorporated DMN53D0U RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 VGS = 2.5V ID = 100mA 1.4 1.2 1 VGS = 5V ID = 500mA 0.8 0.6 0.4 0.2 1.5 1.2 ID = 1mA 0.9 ID = 250µA 0.6 0.3 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 1 0.8 T A = 150°C 0.6 TA = 125°C TA = 25°C 0.4 TA = 85°C T A = -55°C 0.2 0 0 C iss CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f = 1MHz 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Coss Crss 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 40 10 VGS GATE THRESHOLD VOLTAGE (V) NEW PRODUCT 2 8 6 VDS = 10V ID = 250mA 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN53D0U Document number: DS37098 Rev. 2 - 2 1.4 4 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN53D0U Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. ° 7 l l A H E N A L 5 P2 E. G0 U A G J K 1 K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 8° α All Dimensions in mm a M 1 L L D G F NEW PRODUCT A B C Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMN53D0U Document number: DS37098 Rev. 2 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com May 2014 © Diodes Incorporated DMN53D0U IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMN53D0U Document number: DS37098 Rev. 2 - 2 6 of 6 www.diodes.com May 2014 © Diodes Incorporated