STMicroelectronics BTW68N-1200 High surge capability Datasheet

BTW 68 (N)
SCR
..
..
FEATURES
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 68 Serie :
INSULATED VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
K
The BTW 68 (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
A
G
TOP 3
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
Parameter
Value
Unit
RMS on-state current
(180° conduction angle)
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
30
35
A
IT(AV)
Average
on-state
current
(180°
conduction angle,single phase circuit)
BTW 68
BTW 68 N
Tc=80°C
Tc=85°C
19
22
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp=8.3 ms
420
A
tp=10 ms
400
tp=10 ms
800
A2s
100
A/µs
- 40 to + 150
- 40 to + 125
°C
°C
230
°C
I2t
I2 t value
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/µs
Tstg
Tj
Storage and operating junction temperature range
Tl
Symbol
VDRM
VRRM
March 1995
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
Repetitive peak off-state voltage
Tj = 125 °C
BTW 68
BTW 68 / BTW 68 N
200
400
600
800
1000
1200
200
400
600
800
1000
1200
Unit
V
1/5
BTW 68 (N)
THERMAL RESISTANCES
Symbol
Rth (j-a)
Parameter
Value
Unit
50
°C/W
BTW 68
1.1
°C/W
BTW 68 N
0.8
Junction to ambient
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W
PGM = 40W (tp = 20 µs)
IFGM = 8A (tp = 20 µs)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Value
BTW 68
BTW 68 N
IGT
VD =12V
(DC) R L=33Ω
Tj=25°C
MAX
50
mA
VGT
VD =12V
(DC) R L=33Ω
Tj=25°C
MAX
1.5
V
VGD
VD =VDRM RL=3.3kΩ
Tj= 125°C
MIN
0.2
V
tgt
VD =VDRM IG = 200mA
dIG/dt = 1.5A/µs
Tj=25°C
TYP
2
µs
IL
IG= 1.2 IGT
Tj=25°C
TYP
40
mA
IH
IT= 500mA
Tj=25°C
MAX
75
mA
Tj=25°C
MAX
Tj=25°C
MAX
VTM
gate open
BTW 68
ITM= 60A
BTW 68 N ITM= 70A
IDRM
IRRM
VDRM
VRRM
dV/dt
Linear slope up to
VD =67%VDRM
gate open
tq
2/5
Unit
2.1
2.2
V
tp= 380µs
Rated
Rated
Tj= 125°C
VDRM≤ 800V
VDRM ≥ 1000V
VD =67%VDRM ITM= 60A VR= 75V
dITM/dt=30 A/µs
dVD /dt= 20V/µs
0.02
mA
6
Tj= 125°C
MIN
500
250
V/µs
Tj= 125°C
TYP
100
µs
BTW 68 (N)
Package
BTW 68
(Insulated)
BTW 68 N
(Uninsulated)
IT(RMS)
Sensitivity Specification
A
VDRM / VRRM
V
30
200
X
400
X
600
X
35
BTW
800
X
1000
X
1200
X
600
X
800
X
1000
X
1200
X
Fig.1 : Maximum average power dissipation versus
average on-state current (BTW 68).
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 68).
Fig.3 : Maximum average power dissipation versus
average on-state current (BTW 68 N).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (BTW 68 N).
3/5
BTW 68 (N)
Fig.5 : Average on-state
temperature (BTW 68).
current
versus
case
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Fig.6 : Average on-state
temperature (BTW 68 N).
current
versus
case
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
Zth/Rth
1.00
Zth( j-c)
0.10
Zt h( j-a)
0.01
tp( s)
1E-3
1E-2
1E-1
1E +0
1 E+1
1 E+2
1 E +3
Fig.9 : Non repetitive surge peak on-state current
versus number of cycles.
4/5
Fig.10 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t.
BTW 68 (N)
Fig11 : On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA
TOP 3 Plastic
REF.
A
H
I
R 4.6
J
G
B
D
P
L
N
Cooling method : C
Marking : type number
Weight : 4.7 g
DIMENSIONS
Millimeters
N
M
C
Inches
Min.
Max.
Min.
Max.
A
15.10
15.50
0.594
0.611
B
20.70
21.10
0.814
0.831
C
14.30
15.60
0.561
0.615
D
16.10
16.50
0.632
0.650
G
3.40
-
0.133
-
H
4.40
4.60
0.173
0.182
I
4.08
4.17
0.161
0.164
J
1.45
1.55
0.057
0.062
L
0.50
0.70
0.019
0.028
M
2.70
2.90
0.106
0.115
N
5.40
5.65
0.212
0.223
P
1.20
1.40
0.047
0.056
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
Similar pages