NVT2008; NVT2010
Bidirectional voltage-level translator for open-drain and
push-pull applications
Rev. 3 — 27 January 2014
Product data sheet
1. General description
The NVT2008/NVT2010 are bidirectional voltage level translators operational from 1.0 V
to 3.6 V (Vref(A)) and 1.8 V to 5.5 V (Vref(B)), which allow bidirectional voltage translations
between 1.0 V and 5 V without the need for a direction pin in open-drain or push-pull
applications. Bit widths of 8-bit to 10-bit are offered for level translation application with
transmission speeds < 33 MHz for an open-drain system with a 50 pF capacitance and a
pull-up of 197 .
When the An or Bn port is LOW, the clamp is in the ON-state and a low resistance
connection exists between the An and Bn ports. The low ON-state resistance (Ron) of the
switch allows connections to be made with minimal propagation delay. Assuming the
higher voltage is on the Bn port when the Bn port is HIGH, the voltage on the An port is
limited to the voltage set by VREFA. When the An port is HIGH, the Bn port is pulled to the
drain pull-up supply voltage (Vpu(D)) by the pull-up resistors. This functionality allows a
seamless translation between higher and lower voltages selected by the user without the
need for directional control.
When EN is HIGH, the translator switch is on, and the An I/O are connected to the Bn I/O,
respectively, allowing bidirectional data flow between ports. When EN is LOW, the
translator switch is off, and a high-impedance state exists between ports. The EN input
circuit is designed to be supplied by Vref(B). To ensure the high-impedance state during
power-up or power-down, EN must be LOW.
All channels have the same electrical characteristics and there is minimal deviation from
one output to another in voltage or propagation delay. This is a benefit over discrete
transistor voltage translation solutions, since the fabrication of the switch is symmetrical.
The translator provides excellent ESD protection to lower voltage devices, and at the
same time protects less ESD-resistant devices.
2. Features and benefits
Provides bidirectional voltage translation with no direction pin
Less than 1.5 ns maximum propagation delay
Allows voltage level translation between:
1.0 V Vref(A) and 1.8 V, 2.5 V, 3.3 V or 5 V Vref(B)
1.2 V Vref(A) and 1.8 V, 2.5 V, 3.3 V or 5 V Vref(B)
1.8 V Vref(A) and 3.3 V or 5 V Vref(B)
2.5 V Vref(A) and 5 V Vref(B)
3.3 V Vref(A) and 5 V Vref(B)
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
Low 3.5 ON-state connection between input and output ports provides less signal
distortion
5 V tolerant I/O ports to support mixed-mode signal operation
High-impedance An and Bn pins for EN = LOW
Lock-up free operation
Flow through pinout for ease of printed-circuit board trace routing
ESD protection exceeds 4 kV HBM per JESD22-A114 and 1000 V CDM per
JESD22-C101
Packages offered: TSSOP20, DHVQFN20, TSSOP24, DHVQFN24, HVQFN24
3. Ordering information
Table 1.
Ordering information
Type number
Topside
mark
Number Package
of bits
Name
NVT2008BQ[1]
NVT2008
8
DHVQFN20 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 20 terminals;
body 2.5 4.5 0.85 mm
SOT764-1
NVT2008PW[1]
NVT2008
8
TSSOP20
SOT360-1
NVT2010BQ[2]
NVT2010
10
DHVQFN24 plastic dual in-line compatible thermal enhanced very
thin quad flat package; no leads; 24 terminals;
body 3.5 5.5 0.85 mm
SOT815-1
NVT2010BS[2]
N010
10
HVQFN24
plastic thermal enhanced very thin quad flat package;
no leads; 24 terminals; body 4 4 0.85 mm
SOT616-1
NVT2010PW[2]
NVT2010
10
TSSOP24
plastic thin shrink small outline package; 24 leads;
body width 4.4 mm
SOT355-1
[1]
GTL2003 = NVT2008.
[2]
GTL2010 = NVT2010.
Description
Version
plastic thin shrink small outline package; 20 leads;
body width 4.4 mm
3.1 Ordering options
Table 2.
Ordering options
Type number
Orderable
part number
Package
Packing method
Minimum
order quantity
Temperature
NVT2008BQ
NVT2008BQ,115
DHVQFN20
Reel 7” Q1/T1
*Standard mark SMD
3000
Tamb = 40 C to +85 C
NVT2008PW
NVT2008PW,118
TSSOP20
Reel 13” Q1/T1
*Standard mark SMD
2500
Tamb = 40 C to +85 C
NVT2010BQ
NVT2010BQ,118
DHVQFN24
Reel 13” Q1/T1
*Standard mark SMD
3000
Tamb = 40 C to +85 C
NVT2010BS
NVT2010BS,115
HVQFN24
Reel 7” Q1/T1
*Standard mark SMD
1500
Tamb = 40 C to +85 C
NVT2010BS,118
HVQFN24
Reel 13” Q1/T1
*Standard mark SMD
6000
Tamb = 40 C to +85 C
NVT2010PW,118
TSSOP24
Reel 13” Q1/T1
*Standard mark SMD
2500
Tamb = 40 C to +85 C
NVT2010PW
NVT2008_NVT2010
Product data sheet
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Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
2 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
4. Functional diagram
VREFA
VREFB
NVT20xx
EN
A1
SW
B1
An
SW
Bn
GND
Fig 1.
002aae132
Logic diagram of NVT2008/10 (positive logic)
5. Pinning information
5.1 Pinning
1
terminal 1
index area
VREFA
2
19 VREFB
A1
3
18 B1
A2
4
17 B2
A3
5
16 B3
A4
6
15 B4
GND
1
20 EN
VREFA
2
19 VREFB
A1
3
18 B1
A2
4
17 B2
NVT2008_NVT2010
Product data sheet
16 B3
NVT2008BQ
A4
6
15 B4
A5
7
14 B5
A5
7
14 B5
A6
8
13 B6
A6
8
13 B6
A7
9
12 B7
A7
9
12 B7
A8 10
11 B8
NVT2008PW
Pin configuration for TSSOP20
002aae226
Transparent top view
Fig 3.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
B8 11
5
A8 10
A3
002aae225
Fig 2.
20 EN
GND
5.1.1 8-bit in TSSOP20 and DHVQFN20 packages
Pin configuration for DHVQFN20
© NXP B.V. 2014. All rights reserved.
3 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
1
terminal 1
index area
1
24 EN
VREFA
2
23 VREFB
A1
3
22 B1
A2
4
21 B2
A3
5
20 B3
A4
6
19 B4
A5
7
A6
8
17 B6
A7
9
16 B7
A8 10
15 B8
A9 11
14 B9
A10 12
13 B10
NVT2010PW
VREFA
2
23 VREFB
A1
3
22 B1
A2
4
21 B2
A3
5
20 B3
A4
6
A5
7
A6
8
17 B6
A7
9
16 B7
A8 10
15 B8
A9 11
14 B9
A10 12
18 B5
19 B4
18 B5
002aae228
Transparent top view
002aae227
Pin configuration for DHVQFN24
19 B1
20 VREFB
21 EN
22 GND
24 A1
terminal 1
index area
Fig 5.
23 VREFA
Pin configuration for TSSOP24
A2
1
18 B2
A3
2
17 B3
A4
3
A5
4
A6
5
14 B6
A7
6
13 B7
16 B4
15 B5
B8 12
9
A10
B9 11
8
B10 10
7
A9
NVT2010BS
A8
Fig 4.
NVT2010BQ
B10 13
GND
24 EN
GND
5.1.2 10-bit in TSSOP24, DHVQFN24 and HVQFN24 packages
002aae229
Transparent top view
Fig 6.
NVT2008_NVT2010
Product data sheet
Pin configuration for HVQFN24
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NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
5.2 Pin description
Table 3.
Symbol
NVT2008_NVT2010
Product data sheet
Pin description
Pin
Description
NVT2008BQ,
NVT2010BQ,
NVT2008PW[1] NVT2010PW[2]
NVT2010BS[2]
GND
1
1
22
ground (0 V)
VREFA
2
2
23
low-voltage side reference supply
voltage for An
A1
3
3
24
A2
4
4
1
low-voltage side; connect to
VREFA through a pull-up resistor
A3
5
5
2
A4
6
6
3
A5
7
7
4
A6
8
8
5
A7
9
9
6
A8
10
10
7
A9
-
11
8
A10
-
12
9
B1
18
22
19
B2
17
21
18
B3
16
20
17
B4
15
19
16
B5
14
18
15
B6
13
17
14
B7
12
16
13
high-voltage side; connect to
VREFB through a pull-up resistor
B8
11
15
12
B9
-
14
11
B10
-
13
10
VREFB
19
23
20
high-voltage side reference
supply voltage for Bn
EN
20
24
21
switch enable input; connect to
VREFB and pull-up through a
high resistor
[1]
8-bit NVT2008 available in TSSOP20, DHVQFN20 packages.
[2]
10-bit NVT2010 available in TSSOP24, DHVQFN24, HVQFN24 packages.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
5 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
6. Functional description
Refer to Figure 1 “Logic diagram of NVT2008/10 (positive logic)”.
6.1 Function table
Table 4.
Function selection (example)
H = HIGH level; L = LOW level.
Input EN[1]
Function
H
An = Bn
L
disconnect
[1]
EN is controlled by the Vref(B) logic levels and should be at least 1 V higher than Vref(A) for best translator
operation.
7. Application design-in information
The NVT2008/10 can be used in level translation applications for interfacing devices or
systems operating at different interface voltages with one another. The NVT2008/10 is
ideal for use in applications where an open-drain driver is connected to the data I/Os. The
NVT2008/10 can also be used in applications where a push-pull driver is connected to the
data I/Os.
7.1 Enable and disable
The NVT20xx has an EN input that is used to disable the device by setting EN LOW,
which places all I/Os in the high-impedance state.
Vpu(D) = 3.3 V(1)
200 kΩ
NVT2002
Vref(A) = 1.8 V(1)
VREFA
RPU
VCC
SCL
I2C-BUS
MASTER
SDA
GND
2
8 EN
7
RPU
RPU
VREFB
RPU
VCC
A1
A2
3
4
SW
SW
6
5
B1
B2
1
GND
SCL
I2C-BUS
DEVICE
SDA
GND
002aae134
(1) The applied voltages at Vref(A) and Vpu(D) should be such that Vref(B) is at least 1 V higher than
Vref(A) for best translator operation.
Fig 7.
NVT2008_NVT2010
Product data sheet
Typical application circuit (switch always enabled)
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NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
Table 5.
Application operating conditions
Refer to Figure 7.
Min
Typ[1]
Max
Unit
reference voltage (B)
Vref(A) + 0.6
2.1
5
V
input voltage on pin EN
Vref(A) + 0.6
2.1
5
V
Vref(A)
reference voltage (A)
0
1.5
4.4
V
Isw(pass)
pass switch current
-
14
-
mA
Iref
reference current
transistor
-
5
-
A
Tamb
ambient temperature
operating in
free-air
40
-
+85
C
Symbol
Parameter
Vref(B)
VI(EN)
[1]
Conditions
All typical values are at Tamb = 25 C.
Vpu(D) = 3.3 V
3.3 V enable signal(1)
on
off
200 kΩ
(2)
NVT2002
Vref(A) = 1.8 V(1)
VREFA
RPU
2
8 EN
7
RPU
RPU
VCC
VCC
SCL
I2C-BUS
MASTER
SDA
GND
RPU
VREFB
A1
A2
3
4
SW
SW
6
5
B1
B2
1
GND
SCL
I2C-BUS
DEVICE
SDA
GND
002aae135
(1) In the Enabled mode, the applied enable voltage VI(EN) and the applied voltage at Vref(A) should be
such that Vref(B) is at least 1 V higher than Vref(A) for best translator operation.
(2) Note that the enable time and the disable time are essentially controlled by the RC time constant of
the capacitor and the 200 k resistor on the EN pin.
Fig 8.
NVT2008_NVT2010
Product data sheet
Typical application circuit (switch enable control)
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Rev. 3 — 27 January 2014
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NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
1.8 V
1.5 V
1.2 V
1.0 V
5V
200 kΩ
totem pole or
open-drain I/O
NVT20XX
EN
VREFA
VREFB
VCORE
A1
SW
B1
CPU I/O
VCC
CHIPSET I/O
A2
SW
B2
3.3 V
A3
SW
B3
VCC
CHIPSET I/O
A4
A5
A6
An
SW
SW
SW
SW
B4
B5
B6
Bn
GND
002aae133
Fig 9.
Bidirectional translation to multiple higher voltage levels
7.2 Bidirectional translation
For the bidirectional clamping configuration (higher voltage to lower voltage or lower
voltage to higher voltage), the EN input must be connected to VREFB and both pins pulled
to HIGH side Vpu(D) through a pull-up resistor (typically 200 k). This allows VREFB to
regulate the EN input. A filter capacitor on VREFB is recommended. The master output
driver can be totem pole or open-drain (pull-up resistors may be required) and the slave
device output can be totem pole or open-drain (pull-up resistors are required to pull the Bn
outputs to Vpu(D)). However, if either output is totem-pole, data must be unidirectional or
the outputs must be 3-stateable and be controlled by some direction-control mechanism
to prevent HIGH-to-LOW contentions in either direction. If both outputs are open-drain, no
direction control is needed.
The reference supply voltage (Vref(A)) is connected to the processor core power supply
voltage. When VREFB is connected through a 200 k resistor to a 3.3 V to 5.5 V Vpu(D)
power supply, and Vref(A) is set between 1.0 V and (Vpu(D) 1 V), the output of each An
has a maximum output voltage equal to VREFA, and the output of each Bn has a
maximum output voltage equal to Vpu(D).
NVT2008_NVT2010
Product data sheet
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Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
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NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
7.3 Bidirectional level shifting between two different power domains
nominally at the same potential
The less obvious application for the NVT2008/NVT2010 is for level shifting between two
different power domains that are nominally at the same potential, such as a 3.3 V system
where the line crosses power supply domains that under normal operation would be at
3.3 V, but one could be at 3.0 V and the other at 3.6 V, or one could be experiencing a
power failure while the other domain is trying to operate. One of the channel transistors is
used as a second reference transistor with its B side connected to a voltage supply that is
at least 1 V (and preferably 1.5 V) above the maximum possible for either Vpu(A) or Vpu(B).
Then if either pull-up voltage is at 0 V, the channels are disabled, and otherwise the
channels are biased such that they turn OFF at the lower pull-up voltage, and if the two
pull-up voltages are equal, the channel is biased such that it just turns OFF at the
common pull-up voltage.
Vpu(B) = 3.3 V
Vpu(H)
200 kΩ
NVT2003
Vpu(A) = 3.3 V
VREFA
RPU
RPU
2
10 EN
9
RPU
RPU
VREFB
Vpu(B)
VCC
VCC
A1
SCL
I2C-BUS
MASTER
SDA
GND
3
A2
4
A3
5
SW
SW
SW
8
B1
7
B2
6
B3
1
GND
SCL
I2C-BUS
DEVICE
SDA
GND
002aae967
The applied enable voltage Vpu(H) and the applied voltage at Vref(A) and Vref(B) should be such that Vref(H) is at least 1 V higher
than Vref(A) and Vref(B) for best translator operation.
Fig 10. Bidirectional level shifting between two different power domains
7.4 How to size pull-up resistor value
Sizing the pull-up resistor on an open-drain bus is specific to the individual application and
is dependent on the following driver characteristics:
•
•
•
•
The driver sink current
The VOL of driver
The VIL of the driver
Frequency of operation
The following tables can be used to estimate the pull-up resistor value in different use
cases so that the minimum resistance for the pull-up resistor can be found.
NVT2008_NVT2010
Product data sheet
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Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
9 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
Table 6, Table 7 and Table 8 contain suggested minimum values of pull-up resistors for
the PCA9306 and NVT20xx devices with typical voltage translation levels and drive
currents. The calculated values assume that both drive currents are the same.
VOL = VIL = 0.1 VCC and accounts for a 5 % VCC tolerance of the supplies, 1 %
resistor values. It should be noted that the resistor chosen in the final application should
be equal to or larger than the values shown in Table 6, Table 7 and Table 8 to ensure that
the pass voltage is less than 10 % of the VCC voltage, and the external driver should be
able to sink the total current from both pull-up resistors. When selecting the minimum
resistor value in Table 6, Table 7 or Table 8, the drive current strength that should be
chosen should be the lowest drive current seen in the application and account for any
drive strength current scaling with output voltage. For the GTL devices, the resistance
table should be recalculated to account for the difference in ON resistance and bias
voltage limitations between VCC(B) and VCC(A).
Table 6.
Pull-up resistor minimum values, 3 mA driver sink current for PCA9306 and NVT20xx
A-side
1.0 V
B-side
1.2 V
1.5 V
1.8 V
Rpu(A) = 750
Rpu(A) = 845
Rpu(A) = 976
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 750
Rpu(B) = 845
Rpu(B) = 976
Rpu(B) = 887
Rpu(B) = 1.18 k
Rpu(B) = 1.82 k
Rpu(A) = 931
Rpu(A) = 1.02 k
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 931
Rpu(B) = 1.02 k
Rpu(B) = 887
Rpu(B) = 1.18 k
Rpu(B) = 1.82 k
Rpu(A) = 1.1 k
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 1.1 k
Rpu(B) = 866
Rpu(B) = 1.18 k
Rpu(B) = 1.78 k
1.2 V
1.5 V
2.5 V
1.8 V
3.3 V
5.0 V
Rpu(A) = 1.47 k
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 1.47 k
Rpu(B) = 1.15 k
Rpu(B) = 1.78 k
Rpu(A) = 1.96 k
Rpu(A) = none
Rpu(B) = 1.96 k
Rpu(B) = 1.78 k
2.5 V
3.3 V
Rpu(A) = none
Rpu(B) = 1.74 k
Table 7.
Pull-up resistor minimum values, 10 mA driver sink current for PCA9306 and NVT20xx
A-side
1.0 V
B-side
1.2 V
1.5 V
1.8 V
Rpu(A) = 221
Rpu(A) = 255
Rpu(A) = 287
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 221
Rpu(B) = 255
Rpu(B) = 287
Rpu(B) = 267
Rpu(B) = 357
Rpu(B) = 549
Rpu(A) = 274
Rpu(A) = 309
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 309
Rpu(B) = 267
Rpu(B) = 357
Rpu(B) = 549
Rpu(A) = 332
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
1.2 V
Rpu(B) = 274
1.5 V
Rpu(B) = 332
1.8 V
2.5 V
3.3 V
5.0 V
Rpu(B) = 261
Rpu(B) = 348
Rpu(B) = 536
Rpu(A) = 442
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 442
Rpu(B) = 348
Rpu(B) = 536
2.5 V
3.3 V
Rpu(A) = 590
Rpu(A) = none
Rpu(B) = 590
Rpu(B) = 523
Rpu(A) = none
Rpu(B) = 523
NVT2008_NVT2010
Product data sheet
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Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
10 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
Table 8.
Pull-up resistor minimum values, 15 mA driver sink current for PCA9306 and NVT20xx
A-side
1.0 V
B-side
1.2 V
1.5 V
1.8 V
Rpu(A) = 147
Rpu(A) = 169
Rpu(A) = 191
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 147
Rpu(B) = 169
Rpu(B) = 191
Rpu(B) = 178
Rpu(B) = 237
Rpu(B) = 365
Rpu(A) = 182
Rpu(A) = 205
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 182
Rpu(B) = 205
Rpu(B) = 178
Rpu(B) = 237
Rpu(B) = 365
Rpu(A) = 221
Rpu(A) = none
Rpu(A) = none
Rpu(A) = none
1.2 V
1.5 V
2.5 V
Rpu(B) = 221
1.8 V
3.3 V
5.0 V
Rpu(B) = 174
Rpu(B) = 232
Rpu(B) = 357
Rpu(A) = 294
Rpu(A) = none
Rpu(A) = none
Rpu(B) = 294
Rpu(B) = 232
Rpu(B) = 357
2.5 V
Rpu(A) = 392
Rpu(A) = none
Rpu(B) = 392
Rpu(B) = 357
3.3 V
Rpu(A) = none
Rpu(B) = 348
7.5 How to design for maximum frequency operation
The maximum frequency is limited by the minimum pulse width LOW and HIGH as well as
rise time and fall time. See Equation 1 as an example of the maximum frequency. The rise
and fall times are shown in Figure 11.
1
f max = ------------------------------------------------------------------------------------------------------------t LOW min + t HIGH min + t r actual + t f actual
tr(actual)
VIH
VCC
(1)
tf(actual)
tHIGH(min)
0.9 × VCC
tLOW(min)
VIL
VOL
GND
0.1 × VCC
1 / fmax
002aag912
Fig 11. An example waveform for maximum frequency
The rise and fall times are dependent upon translation voltages, the drive strength, the
total node capacitance (CL(tot)) and the pull-up resistors (RPU) that are present on the bus.
The node capacitance is the addition of the PCB trace capacitance and the device
capacitance that exists on the bus. Because of the dependency of the external
components, PCB layout and the different device operating states the calculation of rise
and fall times is complex and has several inflection points along the curve.
The main component of the rise and fall times is the RC time constant of the bus line when
the device is in its two primary operating states: when device is in the ON state and it is
low-impedance, the other is when the device is OFF isolating the A-side from the B-side.
A description of the fall time applied to either An or Bn output going from HIGH to LOW is
as follows. Whichever side is asserted first, the B-side down must discharge to the V CC(A)
voltage. The time is determined by the pull-up resistor, pull-down driver strength and the
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capacitance. As the level moves below the VCC(A) voltage, the channel resistance drops
so that both A and B sides equal. The capacitance on both sides is connected to form the
total capacitance and the pull-up resistors on both sides combine to the parallel equivalent
resistance. The Ron of the device is small compared to the pull-up resistor values, so its
effect on the pull-up resistance can be neglected and the fall is determined by the driver
pulling the combined capacitance and pull-up resistor currents. An estimation of the actual
fall time seen by the device is equal to the time it takes for the B-side to fall to the VCC(A)
voltage and the time it takes for both sides to fall from the VCC(A) voltage to the VIL level.
A description of the rise time applied to either An or Bn output going from LOW to HIGH is
as follows. When the signal level is LOW, the Ron is at its minimum, so the A and B sides
are essentially one node. They will rise together with an RC time constant that is the sum
of all the capacitance from both sides and the parallel of the resistance from both sides.
As the signal approaches the VCC(A) voltage, the channel resistance goes up and the
waveforms separate, with the B side finishing its rise with the RC time constant of the
B side. The rise to VCC(A) is essentially the same for both sides.
There are some basic guidelines to follow that will help maximize the performance of the
device:
• Keep trace length to a minimum by placing the NVT device close to the processor.
• The signal round trip time on trace should be shorter than the rise or fall time of signal
to reduce reflections.
• The faster the edge of the signal, the higher the chance for ringing.
• The higher drive strength controlled by the pull-up resistor (up to 15 mA), the higher
the frequency the device can use.
The system designer must design the pull-up resistor value based on external current
drive strength and limit the node capacitance (minimize the wire, stub, connector and
trace length) to get the desired operation frequency result.
8. Limiting values
Table 9.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Over operating free-air temperature range.
Symbol
Parameter
Vref(A)
Vref(B)
Min
Max
Unit
reference voltage (A)
0.5
+6
V
reference voltage (B)
0.5
+6
V
input voltage
0.5[1]
+6
V
VI/O
voltage on an input/output pin
0.5[1]
+6
V
Ich
channel current (DC)
-
128
mA
IIK
input clamping current
50
-
mA
50
+50
mA
65
+150
C
VI
NVT2008_NVT2010
Product data sheet
Conditions
VI < 0 V
current[2]
IOK
output clamping
Tstg
storage temperature
[1]
The input and input/output negative voltage ratings may be exceeded if the input and input/output clamp
current ratings are observed.
[2]
Low duty cycle pulses, not DC because of heating.
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9. Recommended operating conditions
Table 10.
Operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VI/O
voltage on an input/output pin
An, Bn
0
5.5
V
Vref(A)[1]
reference voltage (A)
VREFA
0
5.4
V
Vref(B)[1]
reference voltage (B)
VREFB
0
5.5
V
VI(EN)
input voltage on pin EN
0
5.5
V
Isw(pass)
pass switch current
-
64
mA
Tamb
ambient temperature
40
+85
C
[1]
operating in free-air
Vref(A) Vref(B) 1 V for best results in level shifting applications.
10. Static characteristics
Table 11. Static characteristics
Tamb = 40 C to +85 C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
VIK
input clamping voltage
II = 18 mA; VI(EN) = 0 V
-
-
1.2
V
IIH
HIGH-level input current
VI = 5 V; VI(EN) = 0 V
-
-
5
A
Ci(EN)
input capacitance on pin EN
VI = 3 V or 0 V
-
17
-
pF
Cio(off)
off-state input/output capacitance
An, Bn; VO = 3 V or 0 V;
VI(EN) = 0 V
-
5
6
pF
Cio(on)
on-state input/output capacitance
An, Bn; VO = 3 V or 0 V;
VI(EN) = 3 V
-
11.5
13[2]
pF
Ron
ON-state resistance[3][4]
An, Bn; VI = 0 V; IO = 64 mA;
VI(EN) = 4.5 V
1
2.7
5.0
-
4.8
7.5
VI = 2.4 V; IO = 15 mA;
VI(EN) = 4.5 V
[1]
[5]
All typical values are at Tamb = 25 C.
[2]
Not production tested, maximum value based on characterization data of typical parts.
[3]
Measured by the voltage drop between the An and Bn terminals at the indicated current through the switch. ON-state resistance is
determined by the lowest voltage of the two terminals.
[4]
See curves in Figure 12 for typical temperature and VI(EN) behavior.
[5]
Guaranteed by design.
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Bidirectional voltage-level translator
10
Ron(typ)
(Ω)
8
6
002aaf697
002aaf698
8
Ron(typ)
(Ω)
VI(EN) = 1.5 V
2.3 V
3.0 V
4.5 V
6
4
4
2
2
0
−40
−20
0
20
40
60
0
−40
80
100
Tamb (°C)
a. IO = 64 mA; VI = 0 V
002aaf699
Ron(typ)
(Ω)
60
60
40
40
20
20
0
20
20
40
60
80
100
Tamb (°C)
40
60
0
−40
80
100
Tamb (°C)
c. IO = 15 mA; VI = 2.4 V; VI(EN) = 3.0 V
002aaf700
80
Ron(typ)
(Ω)
−20
0
b. IO = 15 mA; VI = 2.4 V; VI(EN) = 4.5 V
80
0
−40
−20
−20
0
20
40
60
80
100
Tamb (°C)
d. IO = 15 mA; VI = 1.7 V; VI(EN) = 2.3 V
Fig 12. Typical ON-state resistance versus ambient temperature
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11. Dynamic characteristics
11.1 Open-drain drivers
Table 12. Dynamic characteristics for open-drain drivers
Tamb = 40 C to +85 C; VI(EN) = Vref(B); Rbias(ext) = 200 k; CVREFB = 0.1 F; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Refer to Figure 15
tPLH
LOW to HIGH
propagation delay
from (input) Bn
to (output) An
tPHL
HIGH to LOW
propagation delay
from (input) Bn
to (output) An
[1]
[1]
Ron (CL + Cio(on))
ns
Ron (CL + Cio(on))
ns
See graphs based on Ron typical and Cio(on) + CL = 50 pF.
5.5 V
002aaf348
1 V/div
200 kΩ
6.6 V
0.1 μF
EN
1.5 V swing
VREFB
500 Ω
DUT
SIGNAL
GENERATOR
50 pF
VREFA
Bn
450 Ω
GND
An
1.5 V
GND
40 ns/div
002aaf347
Fig 13. AC test setup
Fig 14. Example of typical AC waveform
VIH
VTT
input
VM
VM
VIL
RL
S1
S2 (open)
from output under test
VOH
output
CL
VM
VM
VOL
002aab846
002aab845
a. Load circuit
b. Timing diagram; high-impedance scope probe
used
S2 = translating down, and same voltage.
CL includes probe and jig capacitance.
All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; Zo = 50 ; tr 2 ns; tf 2 ns.
The outputs are measured one at a time, with one transition per measurement.
Fig 15. Load circuit for outputs
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12. Performance curves
tPLH up-translation is typically dominated by the RC time constant, i.e.,
CL(tot) RPU = 50 pF 197 = 9.85 ns, but the Ron CL(tot) = 50 pF 5 = 0.250 ns.
tPHL is typically dominated by the external pull-down driver + Ron, which is typically small
compared to the tPLH in an up-translation case.
Enable/disable times are dominated by the RC time constant on the EN pin since the
transistor turn off is on the order of ns, but the enable RC is on the order of ms.
Fall time is dominated by the external pull-down driver with only a slight Ron addition.
Rise time is dominated by the RPU CL.
Skew time within the part is virtually non-existent, dominated by the difference in bond
wire lengths, which is typically small compared to the board-level routing differences.
Maximum data rate is dominated by the system capacitance and pull-up resistors.
002aaf701
0.6
tPD
(ns)
(1)
(3)
(2)
0.4
002aaf702
3
tPD
(ns)
(1)
(2)
2
(4)
(5)
0.2
1
0
0
0
20
40
60
80
100
0
20
40
60
80
C (pF)
100
C (pF)
(1) VI(EN) = 1.5 V; IO = 64 mA; VI = 0 V.
(1) VI(EN) = 3.0 V; IO = 15 mA; VI = 2.4 V.
(2) VI(EN) = 4.5 V; IO = 15 mA; VI = 2.4 V.
(2) VI(EN) = 2.3 V; IO = 15 mA; VI = 1.7 V.
(3) VI(EN) = 2.3 V; IO = 64 mA; VI = 0 V.
(4) VI(EN) = 3.0 V; IO = 64 mA; VI = 0 V.
(5) VI(EN) = 4.5 V; IO = 64 mA; VI = 0 V.
Fig 16. Typical capacitance versus propagation delay
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13. Package outline
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NVT2008_NVT2010
Product data sheet
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© NXP B.V. 2014. All rights reserved.
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NXP Semiconductors
Bidirectional voltage-level translator
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Fig 18. Package outline SOT360-1 (TSSOP20)
NVT2008_NVT2010
Product data sheet
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Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
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NXP Semiconductors
Bidirectional voltage-level translator
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NVT2008_NVT2010
Product data sheet
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© NXP B.V. 2014. All rights reserved.
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NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
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NVT2008_NVT2010
Product data sheet
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© NXP B.V. 2014. All rights reserved.
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NXP Semiconductors
Bidirectional voltage-level translator
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Product data sheet
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14. Soldering of SMD packages
This text provides a very brief insight into a complex technology. A more in-depth account
of soldering ICs can be found in Application Note AN10365 “Surface mount reflow
soldering description”.
14.1 Introduction to soldering
Soldering is one of the most common methods through which packages are attached to
Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both
the mechanical and the electrical connection. There is no single soldering method that is
ideal for all IC packages. Wave soldering is often preferred when through-hole and
Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not
suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high
densities that come with increased miniaturization.
14.2 Wave and reflow soldering
Wave soldering is a joining technology in which the joints are made by solder coming from
a standing wave of liquid solder. The wave soldering process is suitable for the following:
• Through-hole components
• Leaded or leadless SMDs, which are glued to the surface of the printed circuit board
Not all SMDs can be wave soldered. Packages with solder balls, and some leadless
packages which have solder lands underneath the body, cannot be wave soldered. Also,
leaded SMDs with leads having a pitch smaller than ~0.6 mm cannot be wave soldered,
due to an increased probability of bridging.
The reflow soldering process involves applying solder paste to a board, followed by
component placement and exposure to a temperature profile. Leaded packages,
packages with solder balls, and leadless packages are all reflow solderable.
Key characteristics in both wave and reflow soldering are:
•
•
•
•
•
•
Board specifications, including the board finish, solder masks and vias
Package footprints, including solder thieves and orientation
The moisture sensitivity level of the packages
Package placement
Inspection and repair
Lead-free soldering versus SnPb soldering
14.3 Wave soldering
Key characteristics in wave soldering are:
• Process issues, such as application of adhesive and flux, clinching of leads, board
transport, the solder wave parameters, and the time during which components are
exposed to the wave
• Solder bath specifications, including temperature and impurities
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14.4 Reflow soldering
Key characteristics in reflow soldering are:
• Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to
higher minimum peak temperatures (see Figure 22) than a SnPb process, thus
reducing the process window
• Solder paste printing issues including smearing, release, and adjusting the process
window for a mix of large and small components on one board
• Reflow temperature profile; this profile includes preheat, reflow (in which the board is
heated to the peak temperature) and cooling down. It is imperative that the peak
temperature is high enough for the solder to make reliable solder joints (a solder paste
characteristic). In addition, the peak temperature must be low enough that the
packages and/or boards are not damaged. The peak temperature of the package
depends on package thickness and volume and is classified in accordance with
Table 13 and 14
Table 13.
SnPb eutectic process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
350
< 2.5
235
220
2.5
220
220
Table 14.
Lead-free process (from J-STD-020D)
Package thickness (mm)
Package reflow temperature (C)
Volume (mm3)
< 350
350 to 2000
> 2000
< 1.6
260
260
260
1.6 to 2.5
260
250
245
> 2.5
250
245
245
Moisture sensitivity precautions, as indicated on the packing, must be respected at all
times.
Studies have shown that small packages reach higher temperatures during reflow
soldering, see Figure 22.
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temperature
maximum peak temperature
= MSL limit, damage level
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 22. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
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15. Soldering: PCB footprints
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Fig 23. PCB footprint for SOT764-1 (DHVQFN20); reflow soldering
NVT2008_NVT2010
Product data sheet
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NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
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NVT2008_NVT2010
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
26 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
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Fig 25. PCB footprint for SOT815-1 (DHVQFN24); reflow soldering
NVT2008_NVT2010
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
27 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
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NVT2008_NVT2010
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
28 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
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Fig 27. PCB footprint for SOT355-1 (TSSOP24); reflow soldering
NVT2008_NVT2010
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
29 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
16. Abbreviations
Table 15.
Abbreviations
Acronym
Description
CDM
Charged Device Model
ESD
ElectroStatic Discharge
GTL
Gunning Transceiver Logic
HBM
Human Body Model
I2C-bus
Inter-Integrated Circuit bus
I/O
Input/Output
LVTTL
Low Voltage Transistor-Transistor Logic
PRR
Pulse Repetition Rate
RC
Resistor-Capacitor network
17. Revision history
Table 16.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NVT2008_NVT2010 v.3
20140127
Product data sheet
-
NVT2008_NVT2010 v.2
Modifications:
•
•
•
•
•
added (new) Section 3.1 “Ordering options”
deleted (old) Section 7.4 “Sizing pull-up resistor”
added (new) Section 7.4 “How to size pull-up resistor value”
added (new) Section 7.5 “How to design for maximum frequency operation”
added (new) Section 15 “Soldering: PCB footprints”
NVT2008_NVT2010 v.2
20120903
Product data sheet
-
NVT2008_NVT2010 v.1
NVT2008_NVT2010 v.1
20100908
Product data sheet
-
-
NVT2008_NVT2010
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
30 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
18. Legal information
19. Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
19.1 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.2 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
NVT2008_NVT2010
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
31 of 33
NVT2008; NVT2010
NXP Semiconductors
Bidirectional voltage-level translator
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.3 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
20. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
NVT2008_NVT2010
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 27 January 2014
© NXP B.V. 2014. All rights reserved.
32 of 33
NXP Semiconductors
NVT2008; NVT2010
Bidirectional voltage-level translator
21. Contents
1
2
3
3.1
4
5
5.1
5.1.1
5.1.2
5.2
6
6.1
7
7.1
7.2
7.3
7.4
7.5
8
9
10
11
11.1
12
13
14
14.1
14.2
14.3
14.4
15
16
17
18
19
19.1
19.2
19.3
20
21
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
8-bit in TSSOP20 and DHVQFN20 packages . 3
10-bit in TSSOP24, DHVQFN24 and HVQFN24
packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5
Functional description . . . . . . . . . . . . . . . . . . . 6
Function table . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application design-in information . . . . . . . . . . 6
Enable and disable . . . . . . . . . . . . . . . . . . . . . . 6
Bidirectional translation . . . . . . . . . . . . . . . . . . 8
Bidirectional level shifting between two different
power domains nominally at the same potential 9
How to size pull-up resistor value . . . . . . . . . . . 9
How to design for maximum frequency
operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 12
Recommended operating conditions. . . . . . . 13
Static characteristics. . . . . . . . . . . . . . . . . . . . 13
Dynamic characteristics . . . . . . . . . . . . . . . . . 15
Open-drain drivers . . . . . . . . . . . . . . . . . . . . . 15
Performance curves . . . . . . . . . . . . . . . . . . . . 16
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
Soldering of SMD packages . . . . . . . . . . . . . . 22
Introduction to soldering . . . . . . . . . . . . . . . . . 22
Wave and reflow soldering . . . . . . . . . . . . . . . 22
Wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 22
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 23
Soldering: PCB footprints. . . . . . . . . . . . . . . . 25
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 30
Legal information. . . . . . . . . . . . . . . . . . . . . . . 31
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 31
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Contact information. . . . . . . . . . . . . . . . . . . . . 32
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 27 January 2014
Document identifier: NVT2008_NVT2010