Advance Technical Information IXYH50N65C3D1 XPTTM 650V IGBT GenX3TM w/ Diode VCES = IC110 = VCE(sat) tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 (IXYH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 650 650 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 IC110 IF110 ICM TC TC TC TC 132 50 50 250 A A A A IA EAS TC = 25°C TC = 25°C 25 400 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load ICM = 100 @VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C = 25°C = 110°C = 110°C = 25°C, 1ms TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Md Mounting Torque G Weight C E G = Gate E = Emitter Tab C = Collector Tab = Collector Features TJ TJM Tstg 650V 50A 2.10V 26ns 600 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in 6 g Optimized for 20-60kHz Switching Square RBSOA Anti-Parallel Fast Diode Avalanche Rated Short Circuit Capability International Standard Package Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250A, VGE = 0V 650 VGE(th) IC = 250A, VCE = VGE 3.5 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = 20V VCE(sat) IC V 6.0 = 36A, VGE = 15V, Note 1 TJ = 150C © 2014 IXYS CORPORATION, All Rights Reserved V 50 A 1.25 mA TJ = 150C IGES 100 1.73 2.10 2.10 nA Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts High Frequency Power Inverters V V DS100628(9/14) IXYH50N65C3D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 18 IC = 36A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 36A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 Inductive load, TJ = 150°C IC = 36A, VGE = 15V VCE = 400V, RG = 5 Note 2 RthJC RthCS TO-247 Outline 30 S 2290 230 50 pF pF pF 86 14 40 nC nC nC 20 36 0.80 90 26 0.47 ns ns mJ ns ns mJ 0.80 19 37 1.60 113 32 0.70 ns ns mJ ns ns mJ 0.21 0.25 °C/W °C/W 1 2 P 3 e Terminals: 1 - Gate 3 - Emitted Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Collector Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) VF IF = 30A, VGE = 0V, Note 1 Irr trr IF = 30A, VGE = 0V, -diF/dt = 500A/μs, VR = 400V Characteristic Values Min. Typ. Max. TJ = 150°C 1.35 2.5 V V TJ = 150°C TJ = 150°C 20 115 A ns RthJC Notes: 0.60 °C/W 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYH50N65C3D1 Fig. 2. Extended Output Characteristics @ TJ = 25ºC Fig. 1. Output Characteristics @ TJ = 25ºC 280 70 VGE = 15V 13V 12V 11V 60 VGE = 15V 14V 240 10V 13V 200 50 12V 40 I C (A) I C (A) 9V 30 8V 160 11V 120 10V 80 20 9V 40 7V 10 8V 7V 6V 0 0 0 0.5 1 1.5 2 2.5 3 0 5 15 20 25 VCE (V) Fig. 3. Output Characteristics @ TJ = 150ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.0 70 VGE = 15V 13V 11V 60 10V 30 VGE = 15V 1.8 I C = 72A VCE(sat) - Normalized 9V 50 I C (A) 10 VCE (V) 40 8V 30 20 1.6 1.4 I C = 36A 1.2 1.0 7V 0.8 10 6V 5V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 I C = 18A 0.6 -50 4.0 -25 0 25 VCE - Volts 75 100 125 150 175 TJ (ºC) Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 5.0 50 Fig. 6. Input Admittance 100 90 TJ = 25ºC 4.5 80 4.0 70 60 I C (A) VCE (V) 3.5 I C = 72A 3.0 50 40 2.5 TJ = 150ºC 25ºC 30 - 40ºC 36A 2.0 20 1.5 10 18A 0 1.0 7 8 9 10 11 12 VGE (V) © 2014 IXYS CORPORATION, All Rights Reserved 13 14 15 4 5 6 7 VGE (V) 8 9 10 IXYH50N65C3D1 Fig. 8. Gate Charge Fig. 7. Transconductance 16 45 TJ = - 40ºC 40 VCE = 325V 14 I C = 36A 35 12 150ºC 10 VGE (V) g f s (S) 30 25ºC 25 20 I G = 10mA 8 6 15 4 10 2 5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 I C (A) QG (nC) Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 90 10,000 f = 1 MHz 100 80 1,000 I C (A) Capacitance (pF) Cies Coes 60 40 100 TJ = 150ºC 20 Cres 10 RG = 5Ω dv / dt < 10V / ns 0 0 5 10 15 20 25 30 35 40 100 VCE (V) 200 300 400 500 600 Fig. 11. Maximum Transient Thermal Impedance 700 VCE (V) 1 Fig. 12. Maximum Transient Thermal Impedance (IGBT) Fig. 11. Forward-Bias Safe Operating Area 1000 aa 0.4 ss s VCE(sat) Limit 25µs 10 100µs Z (th)JC - ºC / W I D - Amperes 100 0.1 1ms 1 TJ = 175ºC TC = 25ºC Single Pulse 10ms DC 0.1 1 10 100 1000 VDS (V) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.00001 0.0001 0.001 0.01 Pulse Width (s) 0.1 1 IXYH50N65C3D1 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 3.2 Eoff 2.8 Eon - 2.4 8 --- Eoff 7 2.0 TJ = 150ºC , VGE = 15V VCE = 400V 5 VCE = 400V 1.6 4 1.2 3 1.6 4 1.2 3 0.8 2 E off (mJ) 5 I C = 72A TJ = 150ºC 0.8 2 0.4 I C = 36A 0.4 ---- Eon (mJ) 2.0 Eon 6 RG = 5Ω , VGE = 15V 6 E on (mJ) E off (mJ) 2.4 Fig. 14. Inductive Switching Energy Loss vs. Collector Current 1 1 TJ = 25ºC 0.0 2.8 10 15 25 30 35 40 45 50 20 25 30 35 40 Eon ---- 7 120 6 100 60 65 0.8 2 td(off) - - - - 320 I C = 72A 60 240 I C = 36A 0.0 25 50 75 100 80 0 0 150 125 0 5 10 15 20 25 30 35 40 45 Fig. 17. Inductive Turn-off Switching Times vs. Collector Current tfi 180 100 RG = 5Ω , VGE = 15V VCE = 400V Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature 120 200 td(off) - - - - 140 40 100 30 80 TJ = 25ºC 60 10 40 25 30 35 40 45 50 55 60 I C (A) © 2014 IXYS CORPORATION, All Rights Reserved 65 70 75 t f i (ns) t f i (ns) 20 120 I C = 72A 60 40 100 80 I C = 36A 20 60 0 25 50 75 100 TJ (ºC) 125 40 150 t d(off) (ns) 120 TJ = 150ºC t d(off) (ns) 140 160 VCE = 400V 80 60 20 55 td(off) - - - - RG = 5Ω , VGE = 15V 160 50 50 RG (Ω) TJ (ºC) tfi 160 20 1 I C = 36A 400 TJ = 150ºC, VGE = 15V 40 0.4 480 t d(off) (ns) 3 tfi 75 80 E on (mJ) 4 1.2 15 70 VCE = 400V 5 I C = 72A 70 55 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 1.6 80 50 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature VCE = 400V 90 45 I C (A) RG = 5Ω , VGE = 15V 2.0 0 15 55 RG (Ω) Eoff 2.4 20 t f i (ns) 5 Eoff (mJ) 0.0 0 IXYH50N65C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 180 tri 160 80 VCE = 400V I C = 36A 60 t r i (ns) t r i (ns) 40 20 20 10 60 22 TJ = 25ºC 40 30 40 25 19 TJ = 150ºC 20 0 0 5 10 15 20 25 30 35 40 45 50 16 0 55 13 15 20 25 30 Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 22 60 21 40 20 I C = 36A 50 60 65 70 75 70 19 0 25 55 80 23 I C = 72A 20 50 90 24 VCE = 400V 80 45 Fig. 22. Maximum Peak Load Current vs. Frequency t d(on) - Nanoseconds t r i (ns) td(on) - - - - RG = 5Ω , VGE = 15V 100 40 100 25 I C (A) tri 120 35 I C (A) RG (Ω) 140 t d(on) (ns) 80 28 VCE = 400V t d(on) (ns) 50 td(on) - - - - 80 60 I C = 72A 31 RG = 5Ω , VGE = 15V 70 120 100 tri 100 TJ = 150ºC, VGE = 15V 140 120 90 td(on) - - - - Fig. 20. Inductive Turn-on Switching Times vs. Collector Current 75 100 125 18 150 TJ (ºC) IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 60 50 Triangular Wave TJ = 150ºC TC = 75ºC 40 VCE = 400V 30 VGE = 15V 20 RG = 5Ω Duty Cycle = 0.5 Square Wave 10 10 100 fmax (kH) 1000 IXYH50N65C3D1 Fig. 23. Diode Forward Characteristics Fig. 24. Reverse Recovery Charge vs. -diF/dt 120 2.0 100 1.8 80 1.6 TVJ = 150ºC VR = 400V IF = 60A 60 QRR (µC) I F (A) TJ = 150ºC TJ = 25ºC 30A 1.4 40 1.2 20 1.0 15A 0 0.8 0 0.5 1 1.5 2 2.5 3 3.5 200 300 400 500 VF (V) 700 800 900 1000 1100 1200 -diF/ dt (A/µs) Fig. 26. Reverse Recovery Time vs. -diF/dt Fig. 25. Reverse Recovery Current vs. -diF/dt 32 180 TVJ = 150ºC 30 IF = 60A TVJ = 150ºC 30A VR = 400V 28 VR = 400V 160 15A 26 140 tRR (ns) 24 I RR (A) 600 22 20 18 IF = 60A 120 30A 100 16 15A 14 80 12 10 60 200 300 400 500 600 700 800 900 1000 1100 1200 200 300 400 500 diF/dt (A/µs) 700 800 900 1000 1100 1200 -diF/dt (A/µs) Fig. 27. Dynamic Parameters QRR, IRR vs. Junction Temperature 1.2 600 Fig. 28. Maximum Transient Thermal Impedance (Diode) 1 VR = 400V 1 I F = 30A -dIF /dt = 500 A/µs Z (th)JC (ºC / W) KF 0.8 0.6 0.4 KF IRR 0.2 KF QRR 0 0 20 40 60 80 100 TJ (ºC) © 2014 IXYS CORPORATION, All Rights Reserved 120 140 160 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) IXYS REF: IXY_50N65C3D1(5D) 9-03-14