<Se.ml-CQncL.ckoi tPioducti, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 BLX65 U.H.F./V.H.F. TRANSMITTING TRANSISTOR N-P-N transistor intended for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. It has a TO-39 metal envelope with the collector connected to the case. QUICK REFERENCE DATA R.F. performance up to Tcase = 25 °C in an unneutralized common-emitter class-B circuit mode of operation VCE V c.w. c.w. c.w. 13,8 12,5 12,5 f MHz PS W 470 typ. 0,4 470 < 0,5 175 typ. 0,12 PL w IG GB dB A i? % 2,0 typ. 0,22 typ. 7 typ. 66 2,0 < 0,25 > 6 > 65 2,0 typ. 0,21 typ. 12 typ. 75 MECHANICAL DATA Zj n 5 + J11 — — VL mS 17-J19 — — Dimensions In mm Fig.1 TO 39/1; collector connected to case. ^max 8,5 max max Maximum lead diameter is guaranteed only for 12,7 mm. NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N I Semi-Conductors encourages customers to verify that datasheets are current before placing orders. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134) Collector-base voltage (open emitter) peak value Collector-emitter voltage (Vg^ = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBOM max - VCESM VCEO max. 36 V max. 18 V V EBO max. 4 V 36 v Collector current (average) Collector current (peak value) f > 1 MHz IC(AV) max. 0.7 A ICM max. 2.0 A Total power dissipation up to Tcase = 90 °C f > 10 MHz Ptot max. 3.0 W Tstg -65 to +150 Ti max Storage temperature Operating junction temperature °C 165 °C = 25 K/W ^ 2.5 K/W THERMAL RESISTANCE From junction to case Rth From mounting base to heatsink with a boron nitride washer for electrical insulation Rth mb-h j-c CHARACTERISTICS Tj = 25 °C unless otherwise specified Breakdown voltages Collector-base voltage open emitter, Ic = 10 mA Collector-emitter voltage VBE = 0; IC = 10 mA Collector-emitter voltage open base, IG = 25 mA Emitter-base voltage open collector, IE = 1,0 mA Collector-emitter saturation voltage 1C = 100 mA; IB = 20 mA V(BR)CBO > 36 V V(BR)CES > 36 V V(BR)CEO > 18 V V (BR)EBO > 4 V VcEsat typ. 0.1 V hFE W. 10 40 fT typ. 1400 typ. 6.5 9.0 PF 4.8 pF D. C. current gain IQ = 100 mA; VCE = 5 V Transition frequency I C = 200 mA; VCE = 5 V; f = 500 MHz MHz Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 10 v Feedback capacitance at f = 1 MHz Ic = 20 mA; VCE = 10 V -CT typ. pF