MCNIX MX25U8035MI25G 4m-bit [x 1/x 2/x 4] 1.8v cmos serial flash Datasheet

MX25U4035
MX25U8035
MX25U4035/MX25U8035
DATASHEET
P/N: PM1394
1
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Contents
FEATURES................................................................................................................................................................... 5
GENERAL DESCRIPTION.......................................................................................................................................... 7
Table 1. Additional Feature Comparison............................................................................................................. 7
PIN CONFIGURATIONS .............................................................................................................................................. 8
PIN DESCRIPTION....................................................................................................................................................... 8
BLOCK DIAGRAM........................................................................................................................................................ 9
DATA PROTECTION................................................................................................................................................... 10
Table 2. Protected Area Sizes........................................................................................................................... 11
Table 3. 512-bit Secured OTP Definition........................................................................................................... 11
Memory Organization................................................................................................................................................ 12
Table 4-1. Memory Organization (4Mb)............................................................................................................ 12
Table 4-2. Memory Organization (8Mb)............................................................................................................ 13
DEVICE OPERATION................................................................................................................................................. 14
Figure 1. Serial Modes Supported.................................................................................................................... 14
HOLD FEATURE......................................................................................................................................................... 15
Figure 2. Hold Condition Operation . ................................................................................................................ 15
COMMAND DESCRIPTION........................................................................................................................................ 16
Table 5. Command Set...................................................................................................................................... 16
(1) Write Enable (WREN).................................................................................................................................. 18
(2) Write Disable (WRDI)................................................................................................................................... 18
(3) Read Identification (RDID)........................................................................................................................... 18
(4) Read Status Register (RDSR)..................................................................................................................... 19
(5) Write Status Register (WRSR)..................................................................................................................... 20
Table 6. Protection Modes................................................................................................................................. 20
(6) Read Data Bytes (READ)............................................................................................................................ 21
(7) Read Data Bytes at Higher Speed (FAST_READ)...................................................................................... 21
(8) 2 x I/O Read Mode (2READ)....................................................................................................................... 21
(9) 4 x I/O Read Mode (4READ)....................................................................................................................... 22
(10) Sector Erase (SE)...................................................................................................................................... 22
(11) Block Erase (BE32K)................................................................................................................................. 23
(12) Block Erase (BE)....................................................................................................................................... 23
(13) Chip Erase (CE)......................................................................................................................................... 23
(14) Page Program (PP)................................................................................................................................... 24
(15) 4 x I/O Page Program (4PP)...................................................................................................................... 24
(16) Continuously program mode (CP mode)................................................................................................... 24
(17) Deep Power-down (DP)............................................................................................................................. 25
(18) Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................. 25
P/N: PM1394
2
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
(19) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)........................................... 26
Table 7. ID Definitions ...................................................................................................................................... 26
(20) Enter Secured OTP (ENSO)...................................................................................................................... 27
(21) Exit Secured OTP (EXSO)......................................................................................................................... 27
(22) Read Security Register (RDSCUR)........................................................................................................... 27
Table 8. Security Register Definition................................................................................................................. 28
(23) Write Security Register (WRSCUR)........................................................................................................... 28
(24) HOLD# pin function enable (HDE)............................................................................................................. 28
POWER-ON STATE.................................................................................................................................................... 29
ELECTRICAL SPECIFICATIONS............................................................................................................................... 30
ABSOLUTE MAXIMUM RATINGS.................................................................................................................... 30
Figure 3. Maximum Negative Overshoot Waveform......................................................................................... 30
CAPACITANCE TA = 25°C, f = 1.0 MHz............................................................................................................ 30
Figure 4. Maximum Positive Overshoot Waveform........................................................................................... 30
Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL............................................................. 31
Figure 6. OUTPUT LOADING.......................................................................................................................... 31
Table 9. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V) ............................... 32
Table 10. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V) ............................ 33
Timing Analysis......................................................................................................................................................... 35
Figure 7. Serial Input Timing............................................................................................................................. 35
Figure 8. Output Timing..................................................................................................................................... 35
Figure 9. Hold Timing........................................................................................................................................ 36
Figure 10. WP# Setup Timing and Hold Timing during WRSR when SRWD=1................................................ 36
Figure 11. Hardware Reset Timing.................................................................................................................... 37
Figure 12. Write Enable (WREN) Sequence (Command 06)............................................................................ 37
Figure 13. Write Disable (WRDI) Sequence (Command 04)............................................................................. 37
Figure 14. Read Identification (RDID) Sequence (Command 9F)..................................................................... 38
Figure 15. Read Status Register (RDSR) Sequence (Command 05)............................................................... 38
Figure 16. Write Status Register (WRSR) Sequence (Command 01).............................................................. 38
Figure 17. Read Data Bytes (READ) Sequence (Command 03)..................................................................... 39
Figure 18. Read at Higher Speed (FAST_READ) Sequence (Command 0B)................................................. 39
Figure 19. 2 x I/O Read Mode Sequence (Command BB)................................................................................ 40
Figure 20. 4 x I/O Read Mode Sequence (Command EB)................................................................................ 40
Figure 21. 4 x I/O Read enhance performance Mode Sequence (Command EB)............................................ 41
Figure 22. Page Program (PP) Sequence (Command 02).............................................................................. 42
Figure 23. 4 x I/O Page Program (4PP) Sequence (Command 38)................................................................. 42
Figure 24. Continuously Program (CP) Mode Sequence with Hardware Detection (Command AD)................ 43
Figure 25. Sector Erase (SE) Sequence (Command 20)................................................................................. 43
Figure 26. Block Erase 32KB (BE32K) Sequence (Command 52).................................................................. 44
Figure 27. Block Erase (BE) Sequence (Command D8).................................................................................. 44
P/N: PM1394
3
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 28. Chip Erase (CE) Sequence (Command 60 or C7).......................................................................... 44
Figure 29. Deep Power-down (DP) Sequence (Command B9)....................................................................... 45
Figure 30. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB).
.......................................................................................................................................................................... 45
Figure 31. Release from Deep Power-down (RDP) Sequence (Command AB).............................................. 46
Figure 32. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF)......... 46
Figure 33. Power-up Timing.............................................................................................................................. 47
Table 11. Power-Up Timing .............................................................................................................................. 47
INITIAL DELIVERY STATE............................................................................................................................... 47
OPERATING CONDITIONS........................................................................................................................................ 48
Figure 34. AC Timing at Device Power-Up........................................................................................................ 48
Figure 35. Power-Down Sequence................................................................................................................... 49
ERASE AND PROGRAMMING PERFORMANCE..................................................................................................... 50
DATA RETENTION..................................................................................................................................................... 50
LATCH-UP CHARACTERISTICS............................................................................................................................... 50
ORDERING INFORMATION....................................................................................................................................... 51
PART NAME DESCRIPTION...................................................................................................................................... 52
PACKAGE INFORMATION......................................................................................................................................... 53
REVISION HISTORY ................................................................................................................................................. 56
P/N: PM1394
4
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
FEATURES
4M-BIT [x 1/x 2/x 4] 1.8V CMOS SERIAL FLASH
8M-BIT [x 1/x 2/x 4] 1.8V CMOS SERIAL FLASH
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 4M: 4,194,304 x 1 bit structure or 2,097,152 x 2 bits (two I/O read mode) structure or 1,048,576 x 4 bits (four I/
O read mode) structure
8M: 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O read mode) structure or 2,097,152 x 4 bits (four I/
O read mode) structure
• Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
• Single Power Supply Operation
- 1.65 to 2.0 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
- Fast read
- 1 I/O: 40MHz with 8 dummy cycles
- 2 I/O: 40MHz with 4 dummy cycles, equivalent to 80MHz
- 4 I/O: 33MHz with 6 dummy cycles, equivalent to 132MHz
- Fast program time: 2ms(typ.) and 7ms(max.)/page (256-byte per page)
- Byte program time: 30us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 90ms (typ.)/sector (4K-byte per sector); 0.8s(typ.) /block (32K-byte per block); 1.5s(typ.) /block
(64K-byte per block); 7.5s(typ.) /chip for 4M; 15s(typ.) /chip for 8M
• Low Power Consumption
- Low active read current: 12mA(max.) at 40MHz, 6mA(max.) at 25MHz
- Low active erase/programming current: 22mA (max.)
- Low standby current: 5uA (max.)
• Deep Power Down: 5uA(max.)
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instructions
- Additional 512-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected sector or block
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)
• Status Register Feature
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
P/N: PM1394
5
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
- RES command for 1-byte Device ID
- Both REMS,REMS2 and REMS4 commands for 1-byte manufacturer ID and 1-byte device ID
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• RESET#/HOLD#/SIO3
- Hardware Reset/HOLD/Serial input & Output for 4 x I/O read mode, the pin defaults to be RESET#
• PACKAGE
- 8-land USON (4x4mm)
- 8-pin SOP (150mil)
- 8-land WSON (6x5mm)
- All Pb-free devices are RoHS Compliant
P/N: PM1394
6
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
GENERAL DESCRIPTION
The MX25U4035 are 4,194,304 bit serial Flash memory, which is configured as 524,288 x 8 internally. When it is
in two or four I/O read mode, the structure becomes 2,097,152 bits x 2 or 1,048,576 bits x 4. The MX25U8035 are
8,388,608 bit serial Flash memory, which is configured as 1,048,576 x 8 internally. When it is in two or four I/O read
mode, the structure becomes 4,194,304 bits x 2 or 2,097,152 bits x 4. When it is in two or four I/O read mode, the
structure becomes 8,388,608 bits x 2 or 4,194,304 bits x 4. The MX25U4035/MX25U8035 feature a serial peripheral interface and software protocol allowing operation on a simple 4-wire bus while it is in single I/O mode. The
four bus signals are a clock input (SCLK), a serial data input (SI), a serial data output (SO) and a chip select (CS#).
Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and RESET#/HOLD# pin become
SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25U4035/MX25U8035 provides sequential read operation on whole chip.
After program/erase command is issued, auto program/ erase algorithms which program/ erase and verify the
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for Continuously program mode, and erase command is executes on sector (4K-byte),
block (32K-byte), or block (64K-byte), or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode and draws less than 5uA DC current.
The MX25U4035/MX25U8035 utilizes MXIC's proprietary memory cell, which reliably stores memory contents even
after typical 100,000 program and erase cycles.
Table 1. Additional Feature Comparison
Additional
Features
Protection and
Security
Read Performance
Identifier
Flexible
Block
Protection
(BP0-BP3)
512-bit
secured
OTP
2 I/O
Read
4 I/O
Read
MX25U4035
V
V
V
V
33 (hex)
MX25U8035
V
V
V
V
34 (hex)
Part
Name
P/N: PM1394
RES
REMS
REMS2
REMS4
RDID
(command: (command: (command: (command: (command:
AB hex)
90 hex)
EF hex)
DF hex)
9F hex)
7
C2 33 (hex) C2 33 (hex) C2 33 (hex)
(if ADD=0) (if ADD=0) (if ADD=0)
C2 34 (hex) C2 34 (hex) C2 34 (hex)
(if ADD=0) (if ADD=0) (if ADD=0)
C2 25 33
(hex)
C2 25 34
(hex)
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
PIN CONFIGURATIONS
8-PIN SOP (150mil)
8-LAND USON (4x4mm)/8-LAND WSON (6x5mm)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
8
7
6
5
VCC
RESET#/HOLD#/SIO3
SCLK
SI/SIO0
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
8
7
6
5
VCC
RESET#/HOLD#/SIO3
SCLK
SI/SIO0
PIN DESCRIPTION
SYMBOL
CS#
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
SI/SIO0
Data Input & Output (for 2xI/O or 4xI/
O read mode)
Serial Data Output (for 1 x I/O)/ Serial
SO/SIO1
Data Input & Output (for 2xI/O or 4xI/
O read mode)
SCLK
Clock Input
Write protection: connect to GND or
WP#/SIO2 Serial Data Input & Output (for 4xI/O
read mode)
RESET#/HOLD# or Serial Data Input
RESET#/
& Output (for 4xI/O read mode)
HOLD#/SIO3
(default RESET# for Single & Daul I/O)
VCC
+ 1.8V Power Supply
GND
Ground
P/N: PM1394
8
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
BLOCK DIAGRAM
X-Decoder
Address
Generator
Memory Array
Page Buffer
SI/SIO0
Data
Register
Y-Decoder
SRAM
Buffer
CS#
WP#/SIO2
RESET#/
HOLD#/SIO3
SCLK
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
SO/SIO1
P/N: PM1394
Sense
Amplifier
9
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
DATA PROTECTION
The MX25U4035/MX25U8035 is designed to offer protection against accidental erasure or programming caused
by spurious system level signals that may exist during power transition. During power up the device automatically
resets the state machine in the standby mode. In addition, with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific command sequences.
•
Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
•
Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data. The WEL bit will return to reset stage under following situation:
- Power-up
- Write Disable (WRDI) command completion
- Write Status Register (WRSR) command completion
- Page Program (PP) command completion
- Continuously Program mode (CP) instruction completion
- Sector Erase (SE) command completion
- Block Erase 32KB (BE32K) command completion
- Block Erase (BE) command completion
- Chip Erase (CE) command completion
•
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature command (RES).
•
Advanced Security Features: there are some protection and security features which protect content from inadvertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0) bits to allow part of memory to be protected
as read only. The protected area definition is shown as table of "Protected Area Sizes", the protected areas are
more flexible which may protect various area by setting value of BP0-BP3 bits.
Please refer to table of "protected area sizes".
- The Hardware Protected Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and SRWD bit.
If the system goes into four I/O read mode, the feature of HPM will be disabled.
P/N: PM1394
10
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Table 2. Protected Area Sizes
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
Status bit
BP2 BP1
0
0
0
0
0
1
0
1
1
0
1
0
1
1
1
1
0
0
0
0
0
1
0
1
1
0
1
0
1
1
1
1
Protect Level
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
4Mb
8Mb
0 (none)
1 (1 block, 1/8 area, block#7)
2 (2 blocks, 1/4 area, block#6-7)
3 (4 blocks, 1/2 area, block#4-7)
4 (8 blocks, ALL)
5 (8 blocks, ALL)
6 (8 blocks, ALL)
7 (8 blocks, ALL)
8 (none)
9 (1 block, 1/8 area, block#0)
10 (2 blocks, 1/4 area, block#0-1)
11 (4 blocks, 1/2 area, block#0-3)
12 (8 blocks, ALL)
13 (8 blocks, ALL)
14 (8 blocks, ALL)
15 (8 blocks, ALL)
0 (none)
1 (1 block, 1/16 area, block#15)
2 (2 blocks, 1/8 area, block#14-15)
3 (4 blocks, 1/4 area, block#12-15)
4 (8 blocks, 1/2 area, block#8-15)
5 (16 blocks, ALL)
6 (16 blocks, ALL)
7 (16 blocks, ALL)
8 (none)
9 (1 block, 1/16 area, block#0)
10 (2 blocks, 1/8 area, block#0-1)
11 (4 blocks, 1/4 area, block#0-3)
12 (8 blocks, 1/2 area, block#0-7)
13 (16 blocks, ALL)
14 (16 blocks, ALL)
15 (16 blocks, ALL)
II. Additional 512-bit secured OTP for unique identifier: to provide 512-bit one-time program area for setting
device unique serial number - Which may be set by factory or system customer. Please refer to table 3. 512-bit
secured OTP definition.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 512-bit secured OTP by entering 512-bit secured OTP mode (with ENSO command), and going through normal program procedure, and then exiting 512-bit secured OTP mode by writing EXSO command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR (write security register)
command to set customer lock-down bit1 as "1". Please refer to table of "security register definition" for security
register bit definition and table of "512-bit secured OTP definition" for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 512-bit secured OTP mode, array access is not allowed.
Table 3. 512-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxxx00~xxxx0F
128-bit
ESN (electrical serial number)
xxxx10~xxxx3F
384-bit
N/A
P/N: PM1394
11
Customer Lock
Determined by customer
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Memory Organization
Table 4-1. Memory Organization (4Mb)
Block
(64KB)
7
Block
(32KB)
15
|
14
6
13
|
12
5
11
|
10
4
9
|
8
3
7
|
6
2
5
|
4
1
3
|
2
0
1
|
0
P/N: PM1394
Sector
(4KB)
127
:
112
111
:
96
95
:
80
79
:
64
63
:
48
47
:
32
31
:
16
15
:
2
1
0
Address Range
07F000h
:
070000h
06F000h
:
060000h
05F000h
:
050000h
04F000h
:
040000h
03F000h
:
030000h
02F000h
:
020000h
01F000h
:
010000h
00F000h
:
002000h
001000h
000000h
07FFFFh
:
070FFFh
06FFFFh
:
060FFFh
05FFFFh
:
050FFFh
04FFFFh
:
040FFFh
03FFFFh
:
030FFFh
02FFFFh
:
020FFFh
01FFFFh
:
010FFFh
00FFFFh
:
002FFFh
001FFFh
000FFFh
12
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Table 4-2. Memory Organization (8Mb)
Block
(64KB)
15
Block
(32KB)
31
|
30
14
29
|
28
13
27
|
26
12
25
|
24
11
23
|
22
10
21
|
20
9
19
|
18
8
17
|
16
7
15
|
14
6
13
|
12
5
11
|
10
4
9
|
8
3
7
|
6
2
5
|
4
1
3
|
2
0
1
|
0
P/N: PM1394
Sector
(4KB)
255
:
240
239
:
224
223
:
208
207
:
192
191
:
176
175
:
160
159
:
144
143
:
128
127
:
112
111
:
96
95
:
80
79
:
64
63
:
48
47
:
32
31
:
16
15
:
2
1
0
Address Range
0FF000h
:
0F0000h
0EF000h
:
0E0000h
0DF000h
:
0D0000h
0CF000h
:
0C0000h
0BF000h
:
0B0000h
0AF000h
:
0A0000h
09F000h
:
090000h
08F000h
:
080000h
07F000h
:
070000h
06F000h
:
060000h
05F000h
:
050000h
04F000h
:
040000h
03F000h
:
030000h
02F000h
:
020000h
01F000h
:
010000h
00F000h
:
002000h
001000h
000000h
0FFFFFh
:
0F0FFFh
0EFFFFh
:
0E0FFFh
0DFFFFh
:
0D0FFFh
0CFFFFh
:
0C0FFFh
0BFFFFh
:
0B0FFFh
0AFFFFh
:
0A0FFFh
09FFFFh
:
090FFFh
08FFFFh
:
080FFFh
07FFFFh
:
070FFFh
06FFFFh
:
060FFFh
05FFFFh
:
050FFFh
04FFFFh
:
040FFFh
03FFFFh
:
030FFFh
02FFFFh
:
020FFFh
01FFFFh
:
010FFFh
00FFFFh
:
002FFFh
001FFFh
000FFFh
13
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation.
2. When incorrect command is inputted to this LSI, this LSI becomes standby mode and keeps the standby mode
until next CS# falling edge. In standby mode, SO pin of this LSI should be High-Z.
3. When correct command is inputted to this LSI, this LSI becomes active mode and keeps the active mode until
next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as Figure 1. "Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, 2READ, 4READ,RES, REMS,
REMS2 and REMS4 the shifted-in instruction sequence is followed by a data-out sequence. After any bit of data
being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE, BE32K, BE,
CE, PP, 4PP, CP, RDP, DP, ENSO, EXSO, and WRSCUR, the CS# must go high exactly at the byte boundary;
otherwise, the instruction will be rejected and not executed.
6. During the progress of Write Status Register, Program, Erase operation, to access the memory array is neglected and not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1394
14
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
HOLD FEATURE
The HDE instruction is required to enable the HOLD# pin function.
HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop the
operation of write status register, programming, or erasing in progress.
The operation of HOLD requires Chip Select (CS#) keeping low and starts on falling edge of HOLD# pin signal while
Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not start until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while Serial Clock (SCLK)
signal is being low (if Serial Clock signal is not being low, HOLD operation will not end until Serial Clock being low),
see Figure 2.
Figure 2. Hold Condition Operation
CS#
SCLK
HOLD#
Hold
Condition
(standard)
Hold
Condition
(non-standard)
The Serial Data Output (SO) is high impedance, both Serial Data Input (SI) and Serial Clock (SCLK) are don't care
during the HOLD operation. If Chip Select (CS#) drives high during HOLD operation, it will reset the internal logic of
the device. To re-start communication with chip, the HOLD# must be at high and CS# must be at low.
P/N: PM1394
15
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
COMMAND DESCRIPTION
Table 5. Command Set
COMMAND WREN (write
(byte)
enable)
Command
(hex)
Input
Cycles
Dummy
Cycles
Action
COMMAND
(byte)
Command
(hex)
Input
Cycles
Dummy
Cycles
Action
COMMAND
(byte)
Command
(hex)
Input
Cycles
Dummy
Cycles
Action
P/N: PM1394
06
WRDI (write
disable)
04
RDID (read
RDSR (read WRSR (write READ (read
identification) status register) status register)
data)
9F
05
FAST READ
(fast read
data)
01
03
0B
Data(8)
ADD(24)
ADD(24)
8
sets the (WEL) resets the
write enable
(WEL) write
latch bit
enable latch
bit
outputs
to read out the to write new n bytes read
JEDEC
values of the values to the out until CS#
ID: 1-byte
status register status register
goes high
Manufacturer
ID & 2-byte
Device ID
2READ (2
x I/O read
command)
Note1
4READ (4
x I/O read
command)
4PP (quad
page program)
SE (sector
erase)
BB
EB
38
20
D8
52
ADD(12)
ADD(6)+
Indicator (2)
ADD(6)+
Data(512)
ADD(24)
ADD(24)
ADD(24)
4
4
n bytes read n bytes read quad input to
out by 2 x I/O out by 4 x I/O program the
until CS# goes until CS# goes selected page
high
high
PP (Page
program)
BE (block
BE 32K (block
erase 64KB) erase 32KB)
n bytes read
out until CS#
goes high
CE (chip
erase)
60 or C7
to erase the
to erase the
to erase the to erase whole
selected
selected 64KB selected 32KB
chip
sector
block
block
CP
REMS (read
REMS2 (read
RDP (Release
(Continuously
DP (Deep
RES (read
electronic
ID for 2x I/O
from deep
program
power down)
electronic ID) manufacturer
mode)
power down)
& device ID)
mode)
02
AD
ADD(24)+
Data(2048)
ADD(24)+
Data(16)
B9
AB
AB
90
EF
ADD(24)
ADD(24)
24
to program the
selected page
continously
program
whole chip,
the address is
automatically
increase
enters deep
power down
mode
release from
to read out
output the
output the
deep power 1-byte Device Manufacturer Manufacturer
down mode
ID
ID & Device ID ID & Device ID
16
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
REMS4 ENSO (enter EXSO (exit
COMMAND
(read ID for
secured
secured
(byte)
4x I/O mode)
OTP)
OTP)
Command
(hex)
Input
Cycles
Dummy
Cycles
Action
DF
B1
C1
RDSCUR
(read
security
register)
WRSCUR
(write
security
register)
2B
2F
ESRY
DSRY
(enable SO (disable SO
to output
to output
RY/BY#)
RY/BY#)
70
80
HDE
(HOLD#
Enable)
AA
ADD(24)
output the
Manufacturer ID &
device ID
to enter
the 512bit Secured
OTP mode
to exit the to read value to set the
to enable
to disable
to enable
512-bit
of security lock-down bit SO to output SO to output HOLD# pin
Secured
register
as "1" (once
RY/BY#
RY/BY#
function
OTP mode
lock-down, during CP
during CP
cannot be
mode
mode
updated)
Note 1: It is not recommended to adopt any other code not in the command definition table, which will potentially
enter the hidden mode.
Note 2: In individual block write protection mode, all blocks/sectors is locked as defualt.
Note 3: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example,
"Data(8)" represents there are 8 clock cycles for the data in.
Note 4: The value of ADD of REMS/REMS2/REMS4 indicates the output of manufacturer ID or device ID. 00 will
output manufacturer ID first and 01 will output device ID first.
P/N: PM1394
17
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
(1) Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP,
CP, SE, BE32K, BE, CE, and WRSR, which are intended to change the device content, should be set every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→ sending WREN instruction code→ CS# goes high.
(Please refer to Figure 12)
(2) Write Disable (WRDI)
The Write Disable (WRDI) instruction is for resetting Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→ sending WRDI instruction code→ CS# goes high. (Please
refer to Figure 13)
The WEL bit is reset by following situations:
- Power-up
- Write Disable (WRDI) instruction completion
- Write Status Register (WRSR) instruction completion
- Page Program (PP) instruction completion
- Quad Page Program (4PP) instruction completion
- Sector Erase (SE) instruction completion
- Block Erase 32KB (BE32K) instruction completion
- Block Erase (BE) instruction completion
- Chip Erase (CE) instruction completion
- Continuously program mode (CP) instruction completion
(3) Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The MXIC
Manufacturer ID is C2(hex), the memory type ID is 25(hex) as the first-byte device ID, and the individual device ID
of second-byte ID are listed as table of "ID Definitions". (Please refer to table 7)
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→ 24-bits ID data out
on SO→ to end RDID operation can use CS# to high at any time during data out. (Please refer to Figure 14)
While Program/Erase operation is in progress, it will not decode the RDID instruction, so there's no effect on the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby stage.
P/N: PM1394
18
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
(4) Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even in
program/erase/write status register condition) and continuously. It is recommended to check the Write in Progress (WIP)
bit before sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register
data out on SO (Please refer to Figure 15)
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device will not accept program/erase/write status register instruction. The program/erase command will be ignored and
not affect value of WEL bit if it is applied to a protected memory area.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, volatile bits, indicate the protected area (as
defined in table 2) of the device to against the program/erase instruction without hardware protection mode being
set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR) instruction to
be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector Erase (SE),
Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits (BP2:BP0)
set to 0, the CE instruction can be executed).
The BP3, BP2, BP1, BP0 bits default value are "1". Which is protected.
QE bit. The Quad Enable (QE) bit, volatile bit, performs Quad when it is reset to "0" (factory default) to enable WP#
or is set to "1" to enable Quad SIO2 and SIO3.
SRWD bit. The Status Register Write Disable (SRWD) bit, volatile bit, is operated together with Write Protection (WP#/
SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only.
The SRWD bit defaults to be "0".
Status Register
bit7
SRWD (status
register write
protect)
bit6
QE
(Quad
Enable)
1=Quad
1=status
Enable
register write
0=not Quad
disable
Enable
bit5
BP3
(level of
protected
block)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
bit2
BP0
(level of
protected
block)
(note 1)
(note 1)
(note 1)
(note 1)
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
Note: see the table 2 "Protected Area Size".
P/N: PM1394
19
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
(5) Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits. Before sending WRSR instruction, the
Write Enable (WREN) instruction must be decoded and executed to set the Write Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1, BP0) bits to define the protected area of memory (as shown in table 2). The WRSR also can set or reset the Quad enable (QE) bit and set or
reset the Status Register Write Disable (SRWD) bit in accordance with Write Protection (WP#/SIO2) pin signal, but
has no effect on bit1(WEL) and bit0 (WIP) of the status register. The WRSR instruction cannot be executed once the
Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI-> CS# goes high. (Please refer to Figure 16)
The CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress. The WIP sets 1
during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL)
bit is reset.
Table 6. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note: As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 2.
As the above table showing, the summary of the Software Protected Mode (SPM) and Hardware Protected Mode (HPM).
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit which can change the
values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0, is at software protected mode (SPM).
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
P/N: PM1394
20
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0.
If the system goes into four I/O read mode, the feature of HPM will be disabled.
(6) Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→ sending READ instruction code→ 3-byte address on
SI→ data out on SO→ to end READ operation can use CS# to high at any time during data out. (Please refer to Figure 17)
(7) Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The sequence of issuing FAST_READ instruction is: CS# goes low-> sending FAST_READ instruction code→3byte address on SI→1-dummy byte (default) address on SI→data out on SO→ to end FAST_READ operation can
use CS# to high at any time during data out. (Please refer to Figure 18)
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle.
(8) 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address interleave on SIO1 & SIO0→ 4-bit dummy cycle on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end 2READ
operation can use CS# to high at any time during data out (Please refer to Figure 19 for 2 x I/O Read Mode Timing
Waveform).
P/N: PM1394
21
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
(9) 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The first address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 24-bit address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to
end 4READ operation can use CS# to high at any time during data out (Please refer to figure 20 for 4 x I/O Read
Mode Timing Waveform).
Another sequence of issuing 4 READ instruction especially useful in random access is : CS# goes low→sending
4 READ instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit
P[7:0]→ 4 dummy cycles →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) →24-bit random access address (Please refer to figure 21 for 4x I/O read enhance performance mode timing waveform).
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h,5Ah,F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0]; likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape from
performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
(10) Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see table of memory organization) is a valid address
for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address
byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low → sending SE instruction code→ 3-byte address on SI
→CS# goes high. (Please refer to Figure 25)
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Sector Erase cycle is in progress. The WIP sets 1 during the
tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
sector is protected by BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the sector.
P/N: PM1394
22
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
(11) Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 32K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch
(WEL) bit before sending the Block Erase (BE32K). Any address of the block (see table of memory organization) is
a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the latest
eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE32K instruction is: CS# goes low → sending BE32K instruction code→ 3-byte address
on SI→ CS# goes high. (see Figure 26)
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked out during the Block Erase cycle is in progress. The WIP sets 1 during the
tBE32K timing, and sets 0 when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If
the block is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (tBE32K) instruction will not be executed on the
block.
(12) Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE). Any address of the block (see table of memory organization) is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte address on SI
→CS# goes high. (see Figure 27)
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Block Erase cycle is in progress. The WIP sets 1 during the tBE
timing, and sets 0 when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the block
is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE) instruction will not be executed on the block.
(13) Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must go
high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→ sending CE instruction code→ CS# goes high. (Please
refer to Figure 28)
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Chip Erase cycle is in progress. The WIP sets 1 during the tCE
timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the chip
is protected by BP2, BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It will be only executed
when BP2, BP1, BP0 all set to "0".
P/N: PM1394
23
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
(14) Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must execute to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device programs only the last 256 data bytes sent to the device. If the entire 256 data bytes are going to be programmed, A7A0 (The eight least significant address bits) should be set to 0. If the eight least significant address bits (A7-A0) are
not all 0, all transmitted data going beyond the end of the current page are programmed from the start address of
the same page (from the address A7-A0 are all 0). If more than 256 bytes are sent to the device, the data of the
last 256-byte is programmed at the request page and previous data will be disregarded. If less than 256 bytes are
sent to the device, the data is programmed at the requested address of the page without effect on other address of
the same page.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→3-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high. (Please refer to Figure 22)
The CS# must go high exactly at the byte boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be check out during the Page Program cycle is in progress. The WIP sets 1 during the
tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Page Program (PP) instruction will not be executed.
(15) 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before
sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and
SIO3 as address and data input, which can improve programmer performance and the effectiveness of application
of lower clock less than 20MHz. For system with faster clock, the Quad page program cannot provide more actual
favors, because the required internal page program time is far more than the time data flows in. Therefore, we suggest that while executing this command (especially during sending data), user can slow the clock speed down to
20MHz below. The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→sending 4PP instruction code→3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high. (Please refer to Figure 23)
(16) Continuously program mode (CP mode)
The CP mode may enhance program performance by automatically increasing address to the next higher address
after each byte data has been programmed.
The Continuously program (CP) instruction is for multiple byte program to Flash. A write Enable (WREN) instruction
must execute to set the Write Enable Latch (WEL) bit before sending the Continuously program (CP) instruction.
CS# requires to go high before CP instruction is executing. After CP instruction and address input, two bytes of
data is input sequentially from MSB(bit7) to LSB(bit0). The first byte data will be programmed to the initial address
range with A0=0 and second byte data with A0=1. If only one byte data is input, the CP mode will not process. If
more than two bytes data are input, the additional data will be ignored and only the first two byte data are valid.
The CP program instruction will be ignored and not affect the WEL bit if it is applied to a protected memory area.
Any byte to be programmed should be in the erase state (FF) first. It will not roll over during the CP mode, once the
P/N: PM1394
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MX25U4035
MX25U8035
last unprotected address has been reached, the chip will exit CP mode and reset write Enable Latch bit (WEL) as
"0" and CP mode bit as "0". Please check the WIP bit status if it is not in write progress before entering next valid
instruction. During CP mode, the valid commands are CP command (AD hex), WRDI command (04 hex), RDSR
command (05 hex), and RDSCUR command (2B hex). And the WRDI command is valid after completion of a CP
programming cycle, which means the WIP bit=0.
The sequence of issuing CP instruction is : CS# high to low→ sending CP instruction code→ 3-byte address on
SI→ Data Byte on SI→CS# goes high to low→ sending CP instruction......→ last desired byte programmed or sending Write Disable (WRDI) instruction to end CP mode-> sending RDSR instruction to verify if CP mode is ended. (Please
refer to Figure 24 of CP mode timing waveform)
Three methods to detect the completion of a program cycle during CP mode:
1) Software method-I: by checking WIP bit of Status Register to detect the completion of CP mode.
2) Software method-II: by waiting for a tBP time out to determine if it may load next valid command or not.
3) Hardware method: by writing ESRY (enable SO to output RY/BY#) instruction to detect the completion of a program cycle during CP mode. The ESRY instruction must be executed before CP mode instruction issuing. Once
it is enabled in CP mode, the CS# goes low will drive out the RY/BY# status on SO, "0" indicates busy stage, "1"
indicates ready stage, SO pin outputs tri-state if CS# goes high. DSRY (disable SO to output RY/BY#) instruction to disable the SO to output RY/BY# and return to status register data output during CP mode. Please note
that the ESRY/DSRY commands are not accepted unless the completion of CP mode.
(17) Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device on the minimizing the power consumption (to entering the Deep Power-down mode), the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode
requires the Deep Power-down (DP) instruction to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are ignored. When CS# goes high, it's only in standby mode not deep
power-down mode. It's different from Standby mode.
The sequence of issuing DP instruction is: CS# goes low→ sending DP instruction code→CS# goes high. (Please
refer to Figure 29)
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction. (Those instructions allow the ID being reading out). When Powerdown, the deep power-down mode automatically stops, and when power-up, the device automatically is in standby
mode. For RDP instruction the CS# must go high exactly at the byte boundary (the latest eighth bit of instruction
code been latched-in); otherwise, the instruction will not executed. As soon as Chip Select (CS#) goes high, a delay
of tDP is required before entering the Deep Power-down mode.
(18) Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is terminated by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 10.AC Characteristics. Once in the
Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions. The
RDP instruction is only for releasing from Deep Power Down Mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as table of ID
Definitions on next page. This is not the same as RDID instruction. It is not recommended to use for new design.
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MX25U8035
For new design, please use RDID instruction.
The sequence is shown as Figure 30, 31. Even in Deep power-down mode, the RDP and RES are also allowed to
be executed, only except the device is in progress of program/erase/write cycle; there's no effect on the current
program/erase/write cycle in progress.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously
in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in
Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
(19) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4)
The REMS, REMS2 & REMS4 instruction is an alternative to the Release from Power-down/Device ID instruction
that provides both the JEDEC assigned manufacturer ID and the specific device ID. The REMS4 instruction is recommended to use for 4 I/O identification and REMS2 instruction is recommended to use for 2 I/O identification.
The REMS, REMS2 & REMS4 instruction is very similar to the Release from Power-down/Device ID instruction. The
instruction is initiated by driving the CS# pin low and shift the instruction code "90h" or "EFh" or "DFh" followed by
two dummy bytes and one bytes address (A7~A0). After which, the Manufacturer ID for MXIC (C2h) and the Device
ID are shifted out on the falling edge of SCLK with most significant bit (MSB) first as shown in figure 32. The Device
ID values are listed in Table 7 of ID Definitions. If the one-byte address is initially set to 01h, then the device ID will
be read first and then followed by the Manufacturer ID. The Manufacturer and Device IDs can be read continuously,
alternating from one to the other. The instruction is completed by driving CS# high.
Table 7. ID Definitions
Command Type
RDID (JEDEC ID)
RES
REMS/REMS2/
REMS4
P/N: PM1394
MX25U4035
manufactuer ID
memory
density
33
memory type
C2
25
electronic ID
33
manufacturer ID
device ID
C2
33
26
MX25U8035
memory
manufacturer ID
type
C2
25
electronic ID
34
manufacturer ID device ID
C2
34
memory
density
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(20) Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 512-bit secured OTP mode. The additional 512-bit secured OTP
is independent from main array, which may use to store unique serial number for system identifier. After entering the
Secured OTP mode, and then follow standard read or program, procedure to read out the data or update data. The
Secured OTP data cannot be updated again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Please note that WRSR/WRSCUR commands are not acceptable during the access of secure OTP region, once security OTP is lock down, only read related commands are valid.
(21) Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 512-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
(22) Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→ sending RDSCUR instruction →Security Register
data out on SO→ CS# goes high.
The definition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory before ex- factory or
not. When it is "0", it indicates non-factory lock; "1" indicates factory- lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 512-bit Secured OTP
area cannot be update any more. While it is in 512-bit secured OTP mode, main array access is not allowed.
Continuously Program Mode( CP mode) bit. The Continuously Program Mode bit indicates the status of CP
mode, "0" indicates not in CP mode; "1" indicates in CP mode.
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Table 8. Security Register Definition
bit7
bit6
bit5
bit4
bit3
bit2
bit1
bit0
x
x
x
Continuously
Program mode
(CP mode)
x
x
LDSO
(indicate if
lock-down
Secured OTP
indicator bit
reserved
reserved
0 = not lockdown
0 = non-factory
1 = lock-down
lock
(cannot
1 = factory
program/erase
lock
OTP)
volatile bit
volatile bit
non-volatile bit non-volatile bit
reserved
reserved
reserved
0=normal
Program mode
1=CP mode
(default=0)
volatile bit
volatile bit
volatile bit
volatile bit
(23) Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. Unlike write status register, the WREN
instruction is not required before sending WRSCUR instruction. The WRSCUR instruction may change the values
of bit1 (LDSO bit) for customer to lock-down the 512-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→sending WRSCUR instruction→ CS# goes high.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
(24) HOLD# pin function enable (HDE)
The HDE instruction is for enabling the HOLD# pin function. The RESET#/HOLD#/SIO# pin defaults to be as RESET# pin function. When HDE instruction is writing to the Flash, and then pin is set to be HOLD# pin. The HOLD
mode will continue until power off. The pin is RESET# pin while power on stage. The HDE instruction is invalid during deep power down mode.
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MX25U8035
POWER-ON STATE
The device is at below states when power-up:
- Standby mode ( please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The read, write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the figure of "power-up timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF)
P/N: PM1394
29
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
-40°C to 85°C
Ambient Operating Temperature
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to VCC+0.5V
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+1.0V to VCC or -0.5V to GND for period up to 20ns.
Figure 4. Maximum Positive Overshoot Waveform
Figure 3. Maximum Negative Overshoot Waveform
20ns
0V
VCC+1.0V
-0.5V
VCC
20ns
CAPACITANCE TA = 25°C, f = 1.0 MHz
SYMBOL PARAMETER
CIN
COUT
P/N: PM1394
MIN.
TYP
MAX.
UNIT
Input Capacitance
6
pF
VIN = 0V
Output Capacitance
8
pF
VOUT = 0V
30
CONDITIONS
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 5. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing referance level
0.8VCC
Output timing referance level
0.7VCC
AC
Measurement
Level
0.3VCC
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 6. OUTPUT LOADING
25K ohm
DEVICE UNDER
TEST
CL
+1.8V
25K ohm
CL=30pF Including jig capacitance
P/N: PM1394
31
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Table 9. DC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V)
SYMBOL PARAMETER
NOTES
MIN.
TYP.
MAX.
UNITS TEST CONDITIONS
ILI
Input Load Current
1
±1
uA
VCC = VCC Max,
VIN = VCC or GND
ILO
Output Leakage Current
1
±1
uA
VCC = VCC Max,
VIN = VCC or GND
ISB1
VCC Standby Current
1
1
5
uA
VIN = VCC or GND,
CS# = VCC
ISB2
Deep Power-down
Current
1
5
uA
VIN = VCC or GND,
CS# = VCC
12
mA
f=40MHz,
fQ=33MHz (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
6
mA
f=25MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
15
22
mA
15
22
mA
1
15
22
mA
Erase in Progress,
CS#=VCC
1
15
22
mA
Erase in Progress,
CS#=VCC
-0.5
0.3VCC
V
0.7VCC
VCC+0.4
V
0.2
V
IOL = 100uA
V
IOH = -100uA
ICC1
VCC Read
VIL
VCC Program Current
(PP)
VCC Write Status
Register (WRSR) Current
VCC Sector/Block (32K,
64K) Erase Current
(SE/BE/BE32K)
VCC Chip Erase Current
(CE)
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
ICC2
ICC3
ICC4
ICC5
1
1
VCC-0.2
Program in Progress,
CS# = VCC
Program status register in
progress, CS#=VCC
Notes :
1. Typical values at VCC = 1.8V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
P/N: PM1394
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REV. 1.4, JUL. 23, 2010
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MX25U8035
Table 10. AC CHARACTERISTICS (Temperature = -40°C to 85°C, VCC = 1.65V ~ 2.0V)
Symbol
fSCLK
fRSCLK
fTSCLK
tCH(1)
tCL(1)
tCLCH(2)
tCHCL(2)
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL(3)
tSHQZ(2)
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
tHHQZ
tHLQZ
tWHSL
tSHWL
tDP(2)
tRES1(2)
tRES2(2)
P/N: PM1394
Alt. Parameter
Clock Frequency for the following instructions:
fC FAST_READ, PP, SE, BE, CE, DP, RES,RDP
WREN, WRDI, RDID, RDSR, WRSR
fR Clock Frequency for READ instructions
fT Clock Frequency for 2READ instructions
fQ Clock Frequency for 4READ instructions
fR
tCLH Clock High Time
fT/fQ
fC
fR
tCLL Clock Low Time
fT/fQ
fC
Clock Rise Time (3) (peak to peak)
Clock Fall Time (3) (peak to peak)
fR
CS# Active Setup Time
tCSS
fT/fQ
(relative to SCLK)
fC
CS# Not Active Hold Time (relative to SCLK)
fR
tDSU Data In Setup Time
fT/fQ
fC
tDH Data In Hold Time
fR
CS# Active Hold Time
fT/fQ
(relative to SCLK)
fC
CS# Not Active Setup Time (relative to SCLK)
tCSH CS# Deselect Time
fR
tDIS Output Disable Time
fT/fQ
fC
Loading: 30pF
Single I/O
Loading: 15pF
tV Clock Low to Output Valid
Loading: 30pF
Multi-I/O
Loading: 15pF
tHO Output Hold Time
HOLD# setup time (relative to SCLK)
HOLD# hold time (relative to SCLK)
HOLD setup time (relative to SCLK)
HOLD hold time (relative to SCLK)
tLZ HOLD to output Low-Z
tHZ HOLD to output High-Z
Write Protect Setup Time
Write Protect Hold Time
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic
Signature Read
CS# High to Standby Mode with Electronic Signature
Read
33
Min.
Max.
Unit
1KHz
40
MHz
1KHz
1KHz
1KHz
16
12
10
16
12
10
0.1
0.1
16
12
8
10
5
3
2
5
16
12
8
10
30
25
40
33
10
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
8.8
us
8.8
us
0
5
5
5
5
20
100
Typ.
20
19
19
10
9
12
10
20
20
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Symbol
tRESET
tRCR
tRCP
tRCE
tREHZ
tW
tBP
tPP
tSE
tBE32
tBE
tCE
Alt. Parameter
Pulse width of RESET
Recovery Time to Read
Recovery Time to Program
Recovery Time to Erase
Time from RESET to High-Z output
Write Status Register Cycle Time
Byte-Program
Page Program Cycle Time
Sector Erase Cycle Time
Block Erase (32KB) Cycle Time
Block Erase (64KB) Cycle Time
Min.
100
4Mb
8Mb
Chip Erase Cycle Time
Typ.
Max.
30
2
0.09
0.8
1.5
7.5
15
100
10
1
100
200
300
7
2
1.6
3
13
25
Unit
ns
ns
us
ms
ns
ns
us
ms
s
s
s
s
s
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Value guaranteed by characterization, not 100% tested in production.
3. tSHSL=30ns for read instruction, tSHSL=50ns for Write/Erase/Program instruction.
4. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
P/N: PM1394
34
REV. 1.4, JUL. 23, 2010
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MX25U8035
Timing Analysis
Figure 7. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 8. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
P/N: PM1394
tSHQZ
ADDR.LSB IN
35
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 9. Hold Timing
CS#
tHLCH
tCHHL
tHHCH
SCLK
tCHHH
tHLQZ
tHHQX
SO
HOLD#
* SI is "don't care" during HOLD operation.
Figure 10. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01
SI
SO
P/N: PM1394
High-Z
36
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MX25U8035
Figure 11. Hardware Reset Timing
tRESET
RESET#
tRCR
tRCP
tRCE
CS#
SCLK
tREHZ
SO
SI
Figure 12. Write Enable (WREN) Sequence (Command 06)
CS#
0
1
2
3
4
5
6
7
6
7
SCLK
Command
SI
06
High-Z
SO
Figure 13. Write Disable (WRDI) Sequence (Command 04)
CS#
0
1
2
3
4
5
SCLK
Command
SI
SO
P/N: PM1394
04
High-Z
37
REV. 1.4, JUL. 23, 2010
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MX25U8035
Figure 14. Read Identification (RDID) Sequence (Command 9F)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18
28 29 30 31
SCLK
Command
SI
9F
Manufacturer Identification
High-Z
SO
7
6
5
3
2
1
Device Identification
0 15 14 13
MSB
3
2
1
0
MSB
Figure 15. Read Status Register (RDSR) Sequence (Command 05)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
command
05
SI
Status Register Out
High-Z
SO
7
6
5
4
3
2
1
Status Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 16. Write Status Register (WRSR) Sequence (Command 01)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
command
SI
SO
P/N: PM1394
Status
Register In
01
7
6
5
4
3
2
1
0
MSB
High-Z
38
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Figure 17. Read Data Bytes (READ) Sequence (Command 03)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
command
24-Bit Address
23 22 21
03
SI
3
2
1
0
MSB
Data Out 1
High-Z
SO
7
6
5
4
Data Out 2
2
3
1
7
0
MSB
Figure 18. Read at Higher Speed (FAST_READ) Sequence (Command 0B)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
0B
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Configurable
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM1394
4
39
6
5
4
3
2
1
0
7
MSB
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 19. 2 x I/O Read Mode Sequence (Command BB)
CS#
0
1
2
3
4
5
6
7
8
18 19 20 21 22 23 24 25 26 27 28 29
9
SCLK

Command
12 ADD Cycle
BB(hex)
SI/SIO0
High Impedance
SO/SIO1
A22 A21

A2 A0 P2 P0
A23 A20

A3 A1 P3 P1
2 dummy
cycle
Data Out
1
Data Out
2
D6 D4 D2 D0 D6 D4
D7 D5 D3 D1 D7 D5
Note: SI/SIO0 or SO/SIO1 should be kept "0h" or "Fh" in the first two dummy cycles. In other words, P2=P0 or
P3=P1 is necessary.
Figure 20. 4 x I/O Read Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
8 Bit Instruction
SI/SIO0
SO/SIO1
WP#/SIO2
NC/SIO3
6 Address cycles
Performance
enhance
indicator (Note)
4 dummy
cycles
Data Output
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
High Impedance
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
High Impedance
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
High Impedance
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
EB(hex)
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
P/N: PM1394
40
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 21. 4 x I/O Read enhance performance Mode Sequence (Command EB)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
n
SCLK
8 Bit Instruction
6 Address cycles
WP#/SIO2
NC/SIO3
4 dummy
cycles
Data Output
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
High Impedance
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
High Impedance
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
High Impedance
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
EB(hex)
SI/SIO0
SO/SIO1
Performance
enhance
indicator (Note)
CS#
n+1
...........
n+7 ...... n+9
........... n+13
...........
SCLK
6 Address cycles
Performance
enhance
indicator (Note)
4 dummy
cycles
Data Output
SI/SIO0
address
bit20, bit16..bit0
P4 P0
data
bit4, bit0, bit4....
SO/SIO1
address
bit21, bit17..bit1
P5 P1
data
bit5 bit1, bit5....
WP#/SIO2
address
bit22, bit18..bit2
P6 P2
data
bit6 bit2, bit6....
NC/SIO3
address
bit23, bit19..bit3
P7 P3
data
bit7 bit3, bit7....
Note: Performance enhance mode, if P7=P3 & P6=P2 & P5=P1 & P4=P0 (Toggling), ex: A5, 5A, 0F
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF
P/N: PM1394
41
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 22. Page Program (PP) Sequence (Command 02)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
1
0
7
6
5
3
2
1
0
2079
2
2078
3
2077
23 22 21
02
SI
Data Byte 1
2076
24-Bit Address
2075
Command
4
1
0
MSB
MSB
2074
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2073
2072
CS#
SCLK
Data Byte 2
SI
7
6
5
4
3
2
Data Byte 3
1
0
MSB
7
6
5
4
3
2
Data Byte 256
7
0
1
MSB
6
5
4
3
2
MSB
Figure 23. 4 x I/O Page Program (4PP) Sequence (Command 38)
CS#
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21
SCLK
Command
20 16 12 8
4
0
4
0
4
0
4
0
4
0
SO/SIO1
21 17 13 9
5
1
5
1
5
1
5
1
5
1
WP#/SIO2
22 18 14 10
6
2
6
2
6
2
6
2
6
2
NC/SIO3
23 19 15 11
7
3
7
3
7
3
7
3
7
3
SI/SIO0
P/N: PM1394
Data Data Data Data
Byte 1 Byte 2 Byte 3 Byte 4
6 Address cycle
38
42
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 24. Continuously Program (CP) Mode Sequence with Hardware Detection (Command AD)
CS#
0 1
6 7 8 9
30 31 31 32
47 48
0 1
6 7 8
20 21 22 23 24
0
7
0
7 8
SCLK
Command
SI
S0
AD (hex)
Valid
Command (1)
data in
Byte 0, Byte1
24-bit address
high impedance
data in
Byte n-1, Byte n
04 (hex)
05 (hex)
status (2)
Notes: (1) During CP mode, the valid commands are CP command (AD hex), WRDI command (04 hex), RDSR
command (05 hex), and RDSCUR command (2B hex).
(2) Once an internal programming operation begins, CS# goes low will drive the status on the SO pin and
CS# goes high will return the SO pin to tri-state.
(3) To end the CP mode, either reaching the highest unprotected address or sending Write Disable (WRDI)
command (04 hex) may achieve it and then it is recommended to send RDSCUR command (2B hex) to verify
if CP mode is ended
Figure 25. Sector Erase (SE) Sequence (Command 20)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
24 Bit Address
Command
SI
23 22
20
2
1
0
MSB
Note: SE command is 20(hex).
P/N: PM1394
43
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 26. Block Erase 32KB (BE32K) Sequence (Command 52)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24 Bit Address
23 22
52
2
0
1
MSB
Note: BE32K command is 52(hex).
Figure 27. Block Erase (BE) Sequence (Command D8)
CS#
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Command
SI
24 Bit Address
23 22
D8
2
1
0
MSB
Note: BE command is D8(hex).
Figure 28. Chip Erase (CE) Sequence (Command 60 or C7)
CS#
0
1
2
3
4
5
6
7
SCLK
Command
SI
60 or C7
Note: CE command is 60(hex) or C7(hex).
P/N: PM1394
44
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 29. Deep Power-down (DP) Sequence (Command B9)
CS#
0
1
2
3
4
5
6
tDP
7
SCLK
Command
B9
SI
Deep Power-down Mode
Stand-by Mode
Figure 30. Release from Deep Power-down and Read Electronic Signature (RES) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Command
SI
AB
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM1394
45
Stand-by Mode
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 31. Release from Deep Power-down (RDP) Sequence (Command AB)
CS#
0
1
2
3
4
5
6
tRES1
7
SCLK
Command
SI
AB
High-Z
SO
Stand-by Mode
Deep Power-down Mode
Figure 32. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90 or EF or DF)
CS#
0
1
2
3
4
5
6
7
8
9 10
SCLK
Command
SI
2 Dummy Bytes
15 14 13
90
3
2
1
0
High-Z
SO
CS#
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
ADD (1)
SI
7
6
5
4
3
2
1
0
Manufacturer ID
SO
X
7
6
5
4
3
2
1
Device ID
0
7
6
5
4
3
2
MSB
MSB
1
0
7
MSB
Notes:
(1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first
(2) Instruction is either 90(hex) or EF(hex) or DF(hex).
P/N: PM1394
46
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 33. Power-up Timing
VCC
VCC(max)
Chip Selection is Not Allowed
VCC(min)
tVSL
Device is fully
accessible
time
Note: VCC (max.) is 2.0V and VCC (min.) is 1.65V.
Table 11. Power-Up Timing
Symbol
tVSL(1)
Parameter
VCC(min) to CS# low
Min.
50
Max.
Unit
us
Note: These parameters are characterized only.
INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1394
47
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 34 and Figure 35 are for the supply voltages and the control signals at device powerup and power-down. If the timing in the figures is ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 34. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tVSL
tCLCH
Parameter
VCC Set Up Time
VCC (min) to CS# low
Notes
1
Min.
20
50
Max.
500000
Unit
us/V
us
Notes:
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
"AC CHARACTERISTICS" table.
P/N: PM1394
48
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Figure 35. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
P/N: PM1394
49
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER
Min.
TYP. (1)
Max. (2)
UNIT
200
ns
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
0.09
2
s
Block Erase Cycle Time (32KB)
0.8
1.6
s
Block Erase Cycle Time (64KB)
1.5
3
s
4M
7.5
13
s
8M
15
25
s
Byte Program Time (via page program command)
30
300
us
Page Program Cycle Time
2
7
ms
Chip Erase Cycle Time
Erase/Program Cycle
100,000
cycles
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 1.8V, and checker board pattern.
2. Under worst conditions of 85°C and 1.65V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command.
DATA RETENTION
PARAMETER
Condition
Min.
Data retention
55˚C
20
Max.
UNIT
years
LATCH-UP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 1.8V, one pin at a time.
P/N: PM1394
50
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
ORDERING INFORMATION
CLOCK
(MHz)
OPERATING
CURRENT
MAX. (mA)
STANDBY
CURRENT
MAX. (uA)
TEMPERATURE
MX25U4035MI-25G
40
12
5
-40°C~85°C
MX25U8035MI-25G
40
12
5
-40°C~85°C
MX25U4035ZUI-25G
40
12
5
-40°C~85°C
MX25U8035ZUI-25G
40
12
5
-40°C~85°C
MX25U4035ZNI-25G
40
12
5
-40°C~85°C
MX25U8035ZNI-25G
40
12
5
-40°C~85°C
PART NO.
P/N: PM1394
51
PACKAGE
8-SOP
(150mil)
8-SOP
(150mil)
8-USON
(4x4mm)
8-USON
(4x4mm)
8-WSON
(6x5mm)
8-WSON
(6x5mm)
Remark
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
Pb-free
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
PART NAME DESCRIPTION
MX 25
U
4035
M
I
25 G
OPTION:
G: Pb-free
SPEED:
25: 40MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M: 150mil 8-SOP
ZU: USON
ZN: WSON
DENSITY & MODE:
4035: 4Mb
8035: 8Mb
TYPE:
U: 1.8V
DEVICE:
25: Serial Flash
P/N: PM1394
52
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
PACKAGE INFORMATION
P/N: PM1394
53
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
P/N: PM1394
54
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
P/N: PM1394
55
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
REVISION HISTORY
Revision No. Description
1.0
1. Removed title of "Advanced Information"
2. Revised 4KB erase time
3. Modified erase/program cycle to be typical 100,000 times
4. Revised QE bit attribute from non-volatile to volatile
1.1
1. Supplemented the HOLD# waveform and timing spec
2. Added condition of data retention
3. Supplemented on the dual I/O read mode sequence
4. Rationalized the content
5. Added advanced information of WSON
1.2
1. Revised 3-wire bus as 4-wire bus
1.3
1. Modified data retention from 10 years to 20 years
2. 8-and WSON package released
3. Modified Figure 34. AC Timing at Device Power-Up
4. Added Figure 35. Power-Down Sequence
5. Modified Figure 8 & Figure 25
6. Removed note 4 from Erase and Programming Performance
1.4
1. Revised Table 5. ENSO and EXSO action
2. Revised Sector Erase Cycle Time in Table 10
and Erase and Programming Performance
P/N: PM1394
56
Page
Date
P5
MAR/09/2009
P48
P1,48
P18
P15,33,36
JUN/30/2009
P49
P40
P5,7,16,17,19
P20,22~25
P6,8,50,51,54
P7
DEC/18/2009
P5,50
APR/22/2010
P6,8,51,52
P48
P49
P35,43
P50
P17
JUL/23/2010
P34, 50
REV. 1.4, JUL. 23, 2010
MX25U4035
MX25U8035
Macronix's products are not designed, manufactured, or intended for use for any high risk applications in which
the failure of a single component could cause death, personal injury, severe physical damage, or other substantial harm to persons or property, such as life-support systems, high temperature automotive, medical, aircraft
and military application. Macronix and its suppliers will not be liable to you and/or any third party for any claims,
injuries or damages that may be incurred due to use of Macronix's products in the prohibited applications.
Copyright© Macronix International Co., Ltd. 2008~2010. All Rights Reserved. Macronix, MXIC, MXIC Logo,
MX Logo, are trademarks or registered trademarks of Macronix International Co., Ltd. The names and brands
of other companies are for identification purposes only and may be claimed as the property of the respective
companies.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
57